公开(公告)号：US10396140B2

公开(公告)日：2019-08-27

申请号：US15427111

申请日：2017-02-08

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jeehoon Kim ,  Shinhyuk Yang ,  Doohyun Kim ,  Kwangsoo Lee ,  Inyoung Jung

IPC: H01L27/32 ,  H01L29/786 ,  H01L51/52 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66

Abstract: A thin film transistor includes a substrate and a gate electrode disposed over the substrate. The gate electrode includes a center part and a peripheral part configured to at least partially surround the center part. The thin film transistor further includes a gate insulating layer disposed below the gate electrode and a first electrode insulated from the gate electrode by the gate insulating layer. The first electrode has at least a portion thereof overlapping the center part. The thin film transistor additionally includes a spacer disposed below the first electrode and a second electrode insulated from the first electrode by the spacer. The second electrode has at least a portion thereof overlapping the peripheral part. The thin film transistor further includes a semiconductor layer connected to the first and second electrodes, and insulated from the gate electrode by the gate insulating layer.