公开(公告)号：US20160197190A1

公开(公告)日：2016-07-07

申请号：US14754213

申请日：2015-06-29

Applicant: Samsung Display Co., Ltd.

Inventor： Dong Hee LEE ,  Sang Won SHIN ,  Hyun Ju KANG ,  Sang Woo SOHN ,  Chang Oh JEONG

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/417 ,  H01L27/12 ,  H01L29/40

CPC classification number: H01L29/7869 ,  H01L27/124 ,  H01L29/401 ,  H01L29/78696

Abstract: Provided is a thin film transistor panel including: a substrate; a gate electrode positioned on the substrate; a gate insulating layer positioned on the gate electrode; an oxide semiconductor positioned on the gate insulating layer and including an oxide layer; and a source electrode and a drain electrode positioned on the oxide semiconductor and facing each other based on a channel of the oxide semiconductor, in which the oxide layer overlaps the gate electrode and is positioned on the oxide semiconductor.

Abstract translation: 提供一种薄膜晶体管面板，包括：基板; 位于所述基板上的栅电极; 位于所述栅电极上的栅极绝缘层; 位于所述栅极绝缘层上且包括氧化物层的氧化物半导体; 以及位于所述氧化物半导体上的源电极和漏极，并且基于所述氧化物半导体的沟道彼此相对，所述氧化物层与所述栅电极重叠并位于所述氧化物半导体上。