公开(公告)号：US20230068662A1

公开(公告)日：2023-03-02

申请号：US17982721

申请日：2022-11-08

Applicant: Samsung Display Co., Ltd.

Inventor： Myoung Geun CHA ,  Sang Gun CHOI ,  Joon Woo BAE ,  Ji Yeong SHIN ,  Yong Su LEE

IPC: H01L51/56 ,  H01L27/32 ,  H01L21/308 ,  H01L51/52

Abstract: A display device includes a first transistor including a first active layer, a first gate electrode overlapping the first active layer, a gate insulating layer between the first active layer and the first gate electrode, a first source electrode, and a first drain electrode; a second transistor including a second active layer, a second gate electrode overlapping the second active layer, a second source electrode and a second drain electrode; a capacitor including a first capacitor electrode connected to the second transistor; a lower electrode disposed under the first active layer; a connecting member connecting the first active layer to the lower electrode; and a first metal pattern contacting the connecting member and disposed on a same layer with the first gate electrode.

公开(公告)号：US20210036268A1

公开(公告)日：2021-02-04

申请号：US17075872

申请日：2020-10-21

Applicant: Samsung Display Co., Ltd.

Inventor： Myoung Geun CHA ,  Sang Gun CHOI ,  Joon Woo BAE ,  Ji Yeong SHIN ,  Yong Su LEE

IPC: H01L51/56 ,  H01L27/32 ,  H01L21/308 ,  H01L51/52

Abstract: A display device includes a first transistor including a first active layer, a first gate electrode overlapping the first active layer, a gate insulating layer between the first active layer and the first gate electrode, a first source electrode, and a first drain electrode; a second transistor including a second active layer, a second gate electrode overlapping the second active layer, a second source electrode and a second drain electrode; a capacitor including a first capacitor electrode connected to the second transistor; a lower electrode disposed under the first active layer; a connecting member connecting the first active layer to the lower electrode; and a first metal pattern contacting the connecting member and disposed on a same layer with the first gate electrode.

公开(公告)号：US20180240910A1

公开(公告)日：2018-08-23

申请号：US15901137

申请日：2018-02-21

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yoon Ho KHANG ,  Doo Na KIM ,  Myoung Geun CHA

IPC: H01L29/786 ,  H01L21/3115 ,  H01L29/66

CPC classification number: H01L29/78603 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/31155 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/1259 ,  H01L27/3262 ,  H01L29/66757 ,  H01L29/66969 ,  H01L29/78666 ,  H01L29/78675

Abstract: A transistor includes a buffer layer, an active pattern, and a first insulating layer. The buffer layer is doped with an impurity. The active pattern is on the buffer layer and includes a channel area between a source area and a drain area. The first insulating layer is on the active pattern. A gate electrode is on the first insulating layer and overlaps the channel area. A source electrode is insulated from the gate electrode and is electrically coupled with the source area. A drain electrode is insulated from the gate electrode and is electrically coupled with the drain area.