ELECTRONIC APPARATUS AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20210343822A1

    公开(公告)日:2021-11-04

    申请号:US17223505

    申请日:2021-04-06

    Abstract: An electronic apparatus includes a first transistor including a first oxide semiconductor pattern, a second transistor including a second oxide semiconductor pattern, a blocking layer including a conductive material, a signal line including a first line and a second line which are disposed on different layers, and a bridge pattern electrically connected to each of the first transistor, the first line of the signal line, and the second line of the signal line, wherein the first line of the signal line and the blocking layer are disposed on a same layer, and the second line of the signal line and the first oxide semiconductor pattern are disposed on a same layer.

    DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME

    公开(公告)号:US20210249499A1

    公开(公告)日:2021-08-12

    申请号:US17074323

    申请日:2020-10-19

    Abstract: A display device and a method of driving a display device are provided. A display device includes a substrate, a first conductive layer on the substrate and including a lower light blocking pattern, a buffer layer on the first conductive layer, a semiconductor layer including a semiconductor pattern on the buffer layer, a gate insulating layer on the semiconductor pattern, a second conductive layer including a gate electrode on the gate insulating layer, a planarization layer on the second conductive layer, and a third conductive layer on the planarization layer and including a first conductive pattern electrically coupling the lower light blocking pattern to the semiconductor pattern, wherein the first conductive pattern is coupled to the lower light blocking pattern through a first contact hole passing through the planarization layer and the buffer layer, and coupled to the semiconductor pattern through a second contact hole passing through the planarization layer.

    TRANSISTOR ARRAY PANEL AND DISPLAY DEVICE INCLUDING THE SAME

    公开(公告)号:US20180175076A1

    公开(公告)日:2018-06-21

    申请号:US15842424

    申请日:2017-12-14

    Abstract: A transistor array panel according to an exemplary embodiment includes: a substrate; a first buffer layer positioned on the substrate; and a first transistor and a second transistor positioned on the substrate and separated from each other, wherein the first transistor includes a polycrystalline semiconductor positioned on the substrate, and a first gate electrode overlapping the polycrystalline semiconductor, the second transistor includes an oxide semiconductor positioned on the first buffer layer, and a second gate electrode overlapping the oxide semiconductor, the first buffer layer covers the first gate electrode, and the first buffer layer includes a silicon oxide.

    DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME

    公开(公告)号:US20240128251A1

    公开(公告)日:2024-04-18

    申请号:US18395966

    申请日:2023-12-26

    CPC classification number: H01L25/167 H01L27/124 H01L27/1259

    Abstract: A display device includes a first conductive layer disposed on a substrate, a passivation layer disposed on the first conductive layer, a second conductive layer disposed on the passivation layer, a via layer disposed on the second conductive layer, a third conductive layer disposed on the via layer, the third conductive layer including a first electrode, a second electrode, a connection pattern, the first electrode, the second electrode, and the connection pattern being spaced apart from each other, and a light emitting element, a first end and a second end of the light emitting element being disposed on the first electrode and the second electrode, respectively, wherein the connection pattern electrically connects the first conductive layer and the second conductive layer through a first contact hole penetrating the via layer and the passivation layer.

    THIN FILM TRANSISTOR, AND TRANSISTOR ARRAY SUBSTRATE

    公开(公告)号:US20240121983A1

    公开(公告)日:2024-04-11

    申请号:US18368461

    申请日:2023-09-14

    Abstract: A thin film transistor includes a substrate; an active layer including a channel area, a first conductive area, and a second conductive area; a gate insulating layer on a portion of the active layer; a first through hole penetrating through a portion of the first conductive area; a second through hole penetrating through a portion of the second conductive area; a gate electrode overlapping the channel area of the active layer; a first electrode electrically connected to the first conductive area; and a second electrode electrically connected to the second conductive area. One side of the first electrode adjacent to the first through hole is parallel to the one side of the first through hole, the first electrode including protrusion parts at both ends thereof and a groove part concavely recessed from the gate electrode.

    DISPLAY DEVICE AND METHOD FOR FABRICATING THE SAME

    公开(公告)号:US20240040870A1

    公开(公告)日:2024-02-01

    申请号:US18230281

    申请日:2023-08-04

    CPC classification number: H10K59/131 H10K59/122 H10K59/1201

    Abstract: A display device includes a substrate, a first conductive layer on the substrate and including a lower light blocking pattern and a first signal line, a buffer layer on the first conductive layer, a semiconductor layer on the buffer layer and including a first semiconductor pattern and a second semiconductor pattern separated from the first semiconductor pattern, an insulating layer on the semiconductor layer and including an insulating layer pattern, a second conductive layer on the insulating layer and including a second signal line, a planarization layer on the second conductive layer, and a third conductive layer on the planarization layer and including an anode electrode. The first semiconductor pattern is electrically connected to the lower light blocking pattern by the anode electrode, and at least a portion of the second semiconductor pattern is isolated from and overlaps each of the first signal line and the second signal line.

    DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME

    公开(公告)号:US20230253415A1

    公开(公告)日:2023-08-10

    申请号:US18193200

    申请日:2023-03-30

    CPC classification number: H01L27/124 H01L27/1262 H10K59/131

    Abstract: A display device includes: a substrate; a first conductive layer on the substrate and comprising a first signal line; an insulating layer pattern on the first conductive layer; a semiconductor pattern on the insulating layer pattern; a gate insulating layer on the semiconductor pattern; and a second conductive layer comprising a gate electrode on the gate insulting layer and a first source/drain electrode and a second source/drain electrode, each on at least a part of the semiconductor pattern, wherein the insulating layer pattern and the semiconductor pattern have a same planar shape, the semiconductor pattern comprises a channel region overlapping the gate electrode, a first source/drain region on a first side of the channel region and a second source/drain region on a second side of the channel region, and the first source/drain electrode electrically connects the first source/drain region and the first signal line.

    DISPLAY PANEL AND METHOD FOR FABRICATING THE SAME

    公开(公告)号:US20230189585A1

    公开(公告)日:2023-06-15

    申请号:US17943133

    申请日:2022-09-12

    Abstract: The present disclosure relates to a display panel and a method for fabricating the same. According to an embodiment, a method for fabricating a display panel, comprises disposing a circuit array and connection lines on the support substrate, the circuit array disposed in the display area, the connection lines disposed in a non-display area; disposing a via layer on the support substrate; providing a sealing hole surrounding the display area by patterning the via layer; disposing a sealing member surrounding the display area on an encapsulation substrate. In the disposing of the circuit array and the connection lines comprises disposing an active layer overlapping a light shielding member and disposing an etch stopper corresponding to at least a portion of an overlapping area between the sealing hole and the first connecting line part, by patterning a semiconductor material layer on the buffer layer.

    DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20220165759A1

    公开(公告)日:2022-05-26

    申请号:US17469217

    申请日:2021-09-08

    Abstract: A display device and a method of manufacturing a display device are provided. The display device includes a first conductive layer on a substrate, a passivation layer disposed on the first conductive layer and exposing at least a part of the first conductive layer, a second conductive layer disposed on the passivation layer and covering an upper surface of the passivation layer, a via layer on the second conductive layer, a third conductive layer including a first electrode, a second electrode, and a connection pattern, and spaced apart from each other on the via layer, and a light emitting element having ends that are disposed on the first electrode and the second electrode, respectively. The connection pattern electrically connects the first conductive layer and the second conductive layer through a first contact hole penetrating the via layer.

    DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME

    公开(公告)号:US20220115364A1

    公开(公告)日:2022-04-14

    申请号:US17471581

    申请日:2021-09-10

    Abstract: A display device includes a first conductive layer disposed on a substrate, a passivation layer disposed on the first conductive layer, a second conductive layer disposed on the passivation layer, a via layer disposed on the second conductive layer, a third conductive layer disposed on the via layer, the third conductive layer including a first electrode, a second electrode, a connection pattern, the first electrode, the second electrode, and the connection pattern being spaced apart from each other, and a light emitting element, a first end and a second end of the light emitting element being disposed on the first electrode and the second electrode, respectively, wherein the connection pattern electrically connects the first conductive layer and the second conductive layer through a first contact hole penetrating the via layer and the passivation layer.

Patent Agency Ranking