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公开(公告)号：US20250098357A1
公开(公告)日：2025-03-20
申请号：US18968825
申请日：2024-12-04
Inventor： Yuuko TOMEKAWA , Yoshihiro SATO
IPC: H01L27/146
Abstract: An imaging device includes a semiconductor substrate and pixels. Each of the pixels includes a first capacitive element including a first electrode provided above the semiconductor substrate, a second electrode provided above the semiconductor substrate, and a dielectric layer located between the first electrode and the second electrode. At least one selected from the group consisting of the first electrode and the second electrode has a first electrical contact point electrically connected to a first electrical element and a second electrical contact point electrically connected to a second electrical element different from the first electrical element. The first capacitive element includes at least one trench portion having a trench shape.
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22.发明公开公开(公告)号：US20230247320A1
公开(公告)日：2023-08-03
申请号：US18296253
申请日：2023-04-05
Inventor： Yoshihiro SATO , Junji HIRASE
IPC: H04N25/65 , H01L27/146 , H04N25/63 , H04N25/75 , H04N25/76
CPC classification number: H04N25/65 , H01L27/14603 , H01L27/14612 , H01L27/14623 , H01L27/14636 , H01L27/14638 , H01L27/14665 , H04N25/63 , H04N25/75 , H04N25/76
Abstract: An imaging device including a semiconductor substrate; pixels; and a signal line located along the pixels, where each of the pixels includes: a photoelectric converter that generates signal charge by photoelectric conversion, a first transistor that outputs a signal to the signal line according to an amount of the signal charge, and a circuit that is coupled to a gate of the first transistor and that includes a capacitive element, and the signal line is located closer to the semiconductor substrate than the capacitive element.
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公开(公告)号：US20200321385A1
公开(公告)日：2020-10-08
申请号：US16909070
申请日：2020-06-23
Inventor： Junji HIRASE , Yoshinori TAKAMI , Shota YAMADA , Yoshihiro SATO , Yoshiaki SATOU
IPC: H01L27/146 , H01L27/148
Abstract: An imaging device including a semiconductor substrate having a first surface, the semiconductor substrate including: a first layer containing an impurity of a first conductivity type; a second layer containing an impurity of a second conductivity type different from the first conductivity type, the second layer being closer to the first surface than the first layer is; and a pixel. The pixel includes a photoelectric converter configured to convert light into charge; and a first diffusion region containing an impurity of the first conductivity type, the first diffusion region facing the first layer via the second layer, configured to store at least a part of the charge. The first layer having a second surface adjacent to the second layer, the second surface including a convex portion toward the first surface, and the convex portion facing the first diffusion region.
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公开(公告)号：US20150090998A1
公开(公告)日：2015-04-02
申请号：US14565212
申请日：2014-12-09
Inventor： Junji HIRASE , Yoshiyuki MATSUNAGA , Yoshihiro SATO
IPC: H01L27/146 , H01L51/42
CPC classification number: H01L27/14614 , H01L27/1461 , H01L27/14612 , H01L27/1464 , H01L27/14641 , H01L27/14645 , H01L27/14669 , H01L51/428 , H04N5/363 , H04N5/378
Abstract: Each unit pixel includes a photoelectric converter formed above a semiconductor region, an amplifier transistor formed in the semiconductor region, and including a gate electrode connected to the photoelectric converter, a reset transistor configured to reset a potential of the gate electrode, and an isolation region formed in the semiconductor region between the amplifier transistor and the reset transistor to electrically isolate the amplifier transistor from the reset transistor. The amplifier transistor includes a source/drain region. The source/drain region has a single source/drain structure.
Abstract translation: 每个单位像素包括形成在半导体区域上方的光电转换器，形成在半导体区域中的放大器晶体管，并且包括连接到光电转换器的栅极电极，配置为复位栅电极的电位的复位晶体管，以及隔离区域 形成在放大器晶体管和复位晶体管之间的半导体区域中，以将放大器晶体管与复位晶体管电隔离。 放大器晶体管包括源极/漏极区域。 源极/漏极区域具有单个源极/漏极结构。
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25.发明申请公开(公告)号：US20250056134A1
公开(公告)日：2025-02-13
申请号：US18928978
申请日：2024-10-28
Inventor： Yoshihiro SATO , Junji HIRASE
IPC: H04N25/65 , H01L27/146 , H04N25/63 , H04N25/75 , H04N25/76
Abstract: A camera system including an optical system; and an imaging device that receives a light through the optical system. The imaging device includes a semiconductor substrate; pixels; and a signal line located along the pixels. Each pixel includes a photoelectric converter that generates signal charge by photoelectric conversion, a first transistor that outputs a signal to the signal line according to an amount of the signal charge, and a circuit that is coupled to a gate of the first transistor and that includes a capacitive element and a second transistor. The signal line is positioned in proximity to the semiconductor. The capacitive element is further away from the semiconductor substrate compared to the signal line. The gate of the first transistor is coupled to the capacitive element through the second transistor, and the gate of the first transistor is coupled to the photoelectric converter not through the second transistor.
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Patent Agency Ranking
公开(公告)号：US20240347562A1
公开(公告)日：2024-10-17
申请号：US18750838
申请日：2024-06-21
Inventor： Yoshihiro SATO , Yoshinori TAKAMI , Ryota SAKAIDA
IPC: H01L27/146
CPC classification number: H01L27/14614 , H01L27/14607 , H01L27/1463 , H01L27/14643
Abstract: An imaging device includes: a photoelectric converter that converts light into a charge; a first diffusion region of a first conductivity type to which the charge is input; a second diffusion region of the first conductivity type; a first contact that is directly connected to the first diffusion region; a second contact that is directly connected to the second diffusion region; a first transistor that includes the first diffusion region as one of a source and a drain and that includes a first gate; and a second transistor that includes the second diffusion region as one of a source and a drain and that includes a second gate. A dimension of the second contact in a direction parallel to a width direction of the second gate is greater than a dimension of the first contact in a direction parallel to a width direction of the first gate.
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公开(公告)号：US20230253422A1
公开(公告)日：2023-08-10
申请号：US18137916
申请日：2023-04-21
Inventor： Masashi MURAKAMI , Kazuko NISHIMURA , Yutaka ABE , Yoshiyuki MATSUNAGA , Yoshihiro SATO , Junji HIRASE
IPC: H01L27/146
CPC classification number: H01L27/14609 , H01L27/14632 , H01L27/14643 , H01L27/14665 , H01L27/14636 , H10K30/00
Abstract: An imaging device including a semiconductor substrate; a photoelectric converter that converts incident light into a signal charge, the photoelectric converter being stacked on the semiconductor substrate; a node to which the signal charge is input; a transistor having a source and a drain, one of the source and the drain being connected to the node; and a capacitive element connected between the transistor and a voltage source or a ground. The transistor is configured to switch between a first mode and a second mode, a sensitivity in the first mode being different from a sensitivity in the second mode, and in a cross-sectional view, the capacitive element is located between the semiconductor substrate and the photoelectric converter.
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公开(公告)号：US20210074768A1
公开(公告)日：2021-03-11
申请号：US17013289
申请日：2020-09-04
Inventor： Yoshihiro SATO , Satoshi SHIBATA , Ryota SAKAIDA
Abstract: An exemplary imaging device according to the present disclosure includes: an imaging region including a plurality of pixels; a peripheral region located outside of the imaging region; and a blockade region located between the imaging region and the peripheral region Each of the plurality of pixels includes a photoelectric conversion layer, a pixel electrode to collect a charge generated in the photoelectric conversion layer, and a first doped region electrically connected to the pixel electrode. In the peripheral region, a circuit to drive the plurality of pixels is provided. The blockade region includes a second doped region of a first conductivity type located between the imaging region and the peripheral region and a plurality of first contact plugs connected to the second doped region.
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公开(公告)号：US20210013252A1
公开(公告)日：2021-01-14
申请号：US17039018
申请日：2020-09-30
Inventor： Kyosuke KOBINATA , Sanshiro SHISHIDO , Yoshihiro SATO
IPC: H01L27/146 , H01L31/0224
Abstract: An imaging device including a semiconductor substrate; a first pixel including a first photoelectric converter configured to convert incident light into charge, and a first diffusion region in the semiconductor substrate, configured to electrically connected to the first photoelectric converter and a second pixel including a second photoelectric converter, configured to convert incident light into charge, and a second diffusion region in the semiconductor substrate, configured to electrically connected to the second photoelectric converter, wherein an area of the first photoelectric converter is greater than an area of the second photoelectric converter in a plan view, both the first diffusion region and the second diffusion region overlap with the first photoelectric converter in the plan view, and neither the first diffusion region nor the second diffusion region overlaps with the second photoelectric converter in the plan view.
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公开(公告)号：US20190273880A1
公开(公告)日：2019-09-05
申请号：US16410893
申请日：2019-05-13
Inventor： Junji HIRASE , Yoshihiro SATO , Yoshinori TAKAMI , Masayuki TAKASE , Masashi MURAKAMI
IPC: H04N5/361 , H04N5/363 , H04N5/359 , H04N5/3745 , H04N5/369 , H01L27/146
Abstract: An imaging device includes a semiconductor layer including an impurity region of a first conductivity type, a photoelectric converter electrically connected to the impurity region, and a transistor having a gate of a second conductivity type different from the first conductivity type, a source and a drain, the transistor including the impurity region as one of the source and the drain, the gate being electrically connected to the impurity region.
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