Abstract:
An image sensor includes a plurality of photodiodes, a plurality of color filters, and a plurality of microlenses. The plurality of photodiodes are arranged as a photodiode array, each of the plurality of photodiodes disposed within respective portions of a semiconductor material with a first lateral area. The plurality of color filters are arranged as a color filter array optically aligned with the photodiode array. Each of the plurality of color filters having a second lateral area greater than the first lateral area. The plurality of microlenses are arranged as a microlens array optically aligned with the color filter array and the photodiode array. Each of the plurality of microlenses have a third later area greater than the first lateral area and less than the second lateral area.
Abstract:
An image sensor for on-chip phase detection includes a pixel array for capturing an image of a scene, wherein the pixel array has a plurality of horizontal phase-detection rows, each including phase-detection pixels for detecting horizontal change in the scene, and a plurality of vertical phase-detection columns, each including phase-detection pixels for detecting vertical change in the scene, and wherein each of the horizontal phase-detection rows intersects each of the vertical phase-detection columns. A phase-detection method includes generating a pair of horizontal line profiles using one of a plurality of phase-detection rows; generating a pair of vertical line profiles using one of a plurality of phase-detection columns intersecting with the one of a plurality of phase-detection rows; and determining phase shift associated with at least one arbitrarily oriented edge in a scene, based upon the pair of horizontal line profiles and the pair of vertical line profiles.
Abstract:
Implementations of a color filter array comprising a plurality of tiled minimal repeating units. Each minimal repeating unit includes at least a first set of filters comprising three or more color filters, the first set including at least one color filter with a first spectral photoresponse, at least one color filter with a second spectral photoresponse, and at least one color filter with a third spectral photoresponse; and a second set of filters comprising one or more broadband filters positioned among the color filters of the first set, wherein each of the one or more broadband filters has a fourth spectral photoresponse with a broader spectrum than any of the first, second, and third spectral photoresponses, and wherein the individual filters of the second set have a smaller area than any of the individual filters in the first set. Other implementations are disclosed and claimed.
Abstract:
Implementations of a color filter array comprising a plurality of tiled minimal repeating units. Each minimal repeating unit includes at least a first set of filters comprising three or more color filters, the first set including at least one color filter with a first spectral photoresponse, at least one color filter with a second spectral photoresponse, and at least one color filter with a third spectral photoresponse; and a second set of filters comprising one or more broadband filters positioned among the color filters of the first set, wherein each of the one or more broadband filters has a fourth spectral photoresponse with a broader spectrum than any of the first, second, and third spectral photoresponses, and wherein the individual filters of the second set have a smaller area than any of the individual filters in the first set. Other implementations are disclosed and claimed.
Abstract:
Embodiments of an apparatus including a pixel array and a color filter array optically coupled to the pixel array, the color filter array including a plurality of tiled minimal repeating units. Processing circuitry is coupled to the pixel array to correct fixed pattern noise (FPN) in an image captured by the pixel array. The processing circuitry corrects the values of pixels that are part of a correction group, and wherein the corrections comprise a combination of a color ratio correction that is based on the ratios of selected colors within the minimal repeating unit, and one or more crosstalk corrections that are based on a chief ray angle (CRA) correction and the color ratio correction.
Abstract:
A crosstalk-suppressing image sensor includes a semiconductor substrate, an opaque layer, and a spectral filter. The semiconductor substrate includes a photodiode therein and is located beneath a light-exposure region of a back surface of the semiconductor substrate. The opaque layer is on the back surface, partially covers the light-exposure region, and has an opaque-layer thickness perpendicular to an image-plane direction parallel to the back surface. The spectral filter is adjacent to the opaque layer in the image-plane direction, and partially covers the light-exposure region.
Abstract:
An image sensor pixel array comprises a plurality of image pixel units to gather image information and a plurality of phase detection auto-focus (PDAF) pixel units to gather phase information. Each of the PDAF pixel units includes two of first image sensor pixels covered by two micro-lenses, respectively. Each of the image pixel units includes four of second image sensor pixels adjacent to each other, wherein each of the second image sensor pixels is covered by an individual micro-lens. A coating layer is disposed on the micro-lenses and forms a flattened surface across the whole image sensor pixel array. A PDAF micro-lens is formed on the coating layer to cover the first image sensor pixels.
Abstract:
An image sensor includes a plurality of photodiodes, a plurality of color filters, and a plurality of microlenses. The plurality of photodiodes are arranged as a photodiode array, each of the plurality of photodiodes disposed within respective portions of a semiconductor material with a first lateral area. The plurality of color filters are arranged as a color filter array optically aligned with the photodiode array. Each of the plurality of color filters having a second lateral area greater than the first lateral area. The plurality of microlenses are arranged as a microlens array optically aligned with the color filter array and the photodiode array. Each of the plurality of microlenses have a third later area greater than the first lateral area and less than the second lateral area.
Abstract:
An image sensor pixel comprises a subpixel and a polarization pixel. The subpixel includes a group of photodiodes disposed in semiconductor material, a shared microlens optically aligned over the group of photodiodes, and a subpixel color filter disposed between the group of photodiodes and the shared microlens. The polarization pixel includes a first photodiode disposed in the semiconductor material, an unshared microlens optically aligned over the first photodiode, and a polarization filter disposed between the first photodiode and the unshared microlens. The shared microlens has a first lateral area. The unshared microlens has a second lateral area less than the first lateral area of the shared microlens.
Abstract:
An image sensor pixel includes a plurality of photodiodes, a shared microlens, and a plurality of microlenses. The plurality of photodiodes are arranged as a photodiode array with each of the plurality of photodiodes disposed within a semiconductor material. The shared microlens is optically aligned with a group of neighboring photodiodes included in the plurality of photodiodes. Each of the plurality of microlenses are optically aligned with an individual one of the plurality of photodiodes other than the group of neighboring photodiodes. The plurality of microlenses laterally surrounds the shared microlens.