PATTERNING PROCESS AND RESIST COMPOSITION
    21.
    发明申请
    PATTERNING PROCESS AND RESIST COMPOSITION 有权
    绘图工艺和耐腐蚀组合物

    公开(公告)号:US20080199806A1

    公开(公告)日:2008-08-21

    申请号:US12029940

    申请日:2008-02-12

    IPC分类号: G03F7/004 G03F7/30

    摘要: A pattern is formed by applying a positive resist composition comprising a polymer comprising 7-oxanorbornane ring-bearing recurring units and acid labile group-bearing recurring units and an acid generator onto a substrate to form a resist film, heat treating and exposing the resist film to radiation, heat treating and developing the resist film with a developer, and causing the resist film to crosslink and cure with the aid of acid and/or heat. A second resist pattern is then formed in the space area of the first resist pattern. The double patterning process reduces the pitch between patterns to one half.

    摘要翻译: 通过在基材上涂布含有包含含有7-氧代降冰片烷环的重复单元和含酸不稳定基团的重复单元的聚合物和酸产生剂的正性抗蚀剂组合物形成抗蚀剂膜,对抗蚀剂膜进行热处理和曝光来形成图案 用显影剂进行辐射,热处理和显影抗蚀剂膜,并使抗蚀剂膜在酸和/或热的帮助下交联和固化。 然后在第一抗蚀剂图案的空间区域中形成第二抗蚀剂图案。 双重图案化工艺将图案之间的间距缩小到一半。

    POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS
    22.
    发明申请
    POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS 审中-公开
    积极的组合和绘图过程

    公开(公告)号:US20130084527A1

    公开(公告)日:2013-04-04

    申请号:US13614527

    申请日:2012-09-13

    摘要: A positive resist composition comprising a polymer having carboxyl groups substituted with an acid labile group having formula (1) exhibits a high contrast of alkaline dissolution rate before and after exposure, a high resolution, a reduced acid diffusion rate, and forms a pattern with good profile, minimal edge roughness, and etch resistance. In formula (1), R1 and R2 each are alkyl, aryl, or alkenyl, which may contain oxygen or sulfur, R3 is fluorine or trifluoromethyl, and m is an integer of 1 to 5.

    摘要翻译: 包含具有由具有式(1)的酸不稳定基团取代的羧基的聚合物的正型抗蚀剂组合物在曝光前后显示出高的对比度的碱溶解速率,高分辨率,降低的酸扩散速率,并形成良好的图案 轮廓,最小边缘粗糙度和耐蚀刻性。 式(1)中,R 1和R 2各自为可以含有氧或硫的烷基,芳基或烯基,R 3为氟或三氟甲基,m为1〜5的整数。

    PATTERNING PROCESS
    23.
    发明申请
    PATTERNING PROCESS 有权
    绘图过程

    公开(公告)号:US20090053651A1

    公开(公告)日:2009-02-26

    申请号:US12194129

    申请日:2008-08-19

    IPC分类号: G03F7/004 G03F7/20

    摘要: A pattern is formed by applying a first positive resist composition onto a substrate, heat treatment, exposure, heat treatment and development to form a first resist pattern; causing the first resist pattern to crosslink and cure by irradiation of high-energy radiation of up to 180 nm wavelength or EB; further applying a second positive resist composition onto the substrate, heat treatment, exposure, heat treatment and development to form a second resist pattern. The double patterning process reduces the pitch between patterns to one half.

    摘要翻译: 通过将第一正性抗蚀剂组合物施加到基材上,热处理,曝光,热处理和显影以形成第一抗蚀剂图案而形成图案; 使得第一抗蚀剂图案通过辐射高达180nm波长或EB的高能量辐射而交联和固化; 进一步将第二正性抗蚀剂组合物施加到基材上,进行热处理,曝光,热处理和显影以形成第二抗蚀剂图案。 双重图案化工艺将图案之间的间距缩小到一半。