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公开(公告)号：US20090021625A1
公开(公告)日：2009-01-22
申请号：US12161612
申请日：2006-10-24
IPC分类号： H04N5/335
CPC分类号： H04N5/378 , H04N5/3742 , H04N5/3765
摘要： According to the present invention, as a structure of a pixel section (10), in each of columns from a first to a m-th column, a plurality of pixel signals outputted from a plurality of pixels arranged in a column direction are transmitted, respectively, to a plurality of output signal lines (15l to 15n) different from each other. Then, a read control and are set control are simultaneously executed on the plurality of pixels.
摘要翻译： 根据本发明，作为像素部（10）的结构，在从第一至第m列的各列中发送从列方向排列的多个像素输出的多个像素信号， 分别对应于彼此不同的多个输出信号线（15 1〜15 n）。 然后，对多个像素同时执行读取控制和设置控制。
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公开(公告)号：US20070030372A1
公开(公告)日：2007-02-08
申请号：US11529256
申请日：2006-09-29
IPC分类号： H04N5/335
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14636 , H04N5/341 , H04N5/3575 , H04N5/3741
摘要： In each photosensitive cell, a photodiode 101, a transfer gate 102, a floating diffusion layer section 103, an amplifier transistor 104, and a reset transistor 105 are formed in one active region surrounded by a device isolation region. The floating diffusion layer section 103 included in one photosensitive cell is connected not to the amplifier transistor 104 included in that cell but to the gate of the amplifier transistor 104 included in another photosensitive cell adjacent to the one photosensitive cell in the column direction. A polysilicon wire 111 connects the transfer gates 102 arranged in the same row, and a polysilicon wire 112 connects the reset transistors 105 arranged in the same row. For connection in the row direction, only polysilicon wires are used.
摘要翻译： 在每个感光单元中，在由器件隔离区包围的一个有源区域中形成光电二极管101，传输门102，浮动扩散层部分103，放大器晶体管104和复位晶体管105。 包含在一个感光单元中的浮动扩散层部分103不是连接到包括在该单元中的放大器晶体管104，而是连接到在列方向上与一个感光单元相邻的另一个感光单元中的放大器晶体管104的栅极。 多晶硅导线111连接排列在同一行的传输门102，并且多晶硅布线112连接布置在同一行中的复位晶体管105。 为了在行方向上连接，仅使用多晶硅线。
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公开(公告)号：US20060050161A1
公开(公告)日：2006-03-09
申请号：US10532992
申请日：2004-02-26
IPC分类号： H04N5/335
CPC分类号： H04N5/378 , H04N5/3577 , H04N5/374
摘要： Photosensitive cells each includes a photodiode (1), a transfer gate (2), a floating diffusion layer portion (3), an amplifying transistor (4), and a reset transistor (5). Drains of the amplifying transistors (4) of the photosensitive cells are connected to a power supply line (10), and a pulsed power supply voltage (VddC) is applied to the power supply line (10). Here, a low-level potential (VddC_L) of the power supply voltage has a predetermined potential higher than zero potential. Specifically, by making the low-level potential (VddC_L) higher than channel potentials obtained when a low level is applied to the reset transistors (5), or channel potentials obtained when a low level is applied to the transfer gates (2), or channel potentials of the photodiodes (1), a reproduced image with low noise is read.
摘要翻译： 感光单元每个包括光电二极管（1），传输门（2），浮动扩散层部分（3），放大晶体管（4）和复位晶体管（5）。 感光单元的放大晶体管（4）的漏极连接到电源线（10），并且将脉冲电源电压（VddC）施加到电源线（10）。 这里，电源电压的低电平电位（VddC_L）具有高于零电位的预定电位。 具体地说，通过使低电位电位（VddC_L）高于向复位晶体管（5）施加低电平时获得的沟道电位，或者当向传输门（2）施加低电平时获得的沟道电位，或 读取光电二极管（1）的通道电位，读出低噪声的再现图像。
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公开(公告)号：US20100309355A1
公开(公告)日：2010-12-09
申请号：US12857157
申请日：2010-08-16
IPC分类号： H04N5/335
CPC分类号： H04N5/335 , H01L27/14609 , H01L27/14623 , H01L27/14643
摘要： An amplification type solid state imaging device in use includes at least a light-receiving portion 10 formed by arranging on a semiconductor substrate 7 one-dimensionally or two-dimensionally a plurality of pixels that convert incident light to signal charge and output electric signals corresponding to the amount of the signal charge, a reader for reading out sequentially the electric signals from the respective pixels, a noise rejection circuit 11 for suppressing spurious signals for the electric signals read out by the reader, and a first light-shielding layer 1 positioned on the upper part of the light-receiving portion 10 so as to restrict entry of light into parts other than photoelectric conversion portions 10a of the pixels. Furthermore, a second light-shielding layer 2 for restricting entry of light into the noise rejection circuit 11 is provided on the upper part of the noise rejection circuit 11.
摘要翻译： 使用的放大型固态成像装置至少包括通过在半导体衬底7上一维或二维地排列将入射光转换成信号电荷的多个像素而形成的光接收部分10，并输出对应于 信号电荷的量，从各个像素依次读出电信号的读取器，用于抑制由读取器读出的电信号的寄生信号的噪声抑制电路11以及位于第一遮光层1上的第一遮光层1 光接收部10的上部，以限制光进入像素的光电转换部10a以外的部分。 此外，在噪声抑制电路11的上部设置有用于限制入射到噪声抑制电路11中的第二遮光层2。
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公开(公告)号：US20080231733A1
公开(公告)日：2008-09-25
申请号：US11568565
申请日：2005-07-27
IPC分类号： H04N5/335
CPC分类号： H04N5/335 , H01L27/14609 , H01L27/14623 , H01L27/14643
摘要： An amplification type solid state imaging device in use includes at least a light-receiving portion 10 formed by arranging on a semiconductor substrate 7 one-dimensionally or two-dimensionally a plurality of pixels that convert incident light to signal charge and output electric signals corresponding to the amount of the signal charge, a reader for reading out sequentially the electric signals from the respective pixels, a noise rejection circuit 11 for suppressing spurious signals for the electric signals read out by the reader, and a first light-shielding layer 1 positioned on the upper part of the light-receiving portion 10 so as to restrict entry of light into parts other than photoelectric conversion portions 10a of the pixels. Furthermore, a second light-shielding layer 2 for restricting entry of light into the noise rejection circuit 11 is provided on the upper part of the noise rejection circuit 11.
摘要翻译： 使用的放大型固态成像装置至少包括通过在半导体衬底7上一维或二维地排列将入射光转换成信号电荷的多个像素而形成的光接收部分10，并输出对应于 信号电荷的量，从各个像素依次读出电信号的读取器，用于抑制由读取器读出的电信号的寄生信号的噪声抑制电路11以及位于第一遮光层1上的第一遮光层1 光接收部分10的上部，以便限制光进入像素的光电转换部分10a以外的部分。 此外，在噪声抑制电路11的上部设置有用于限制入射到噪声抑制电路11中的第二遮光层2。
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26.发明授权Solid-state imaging device with multiple impurity regions and method for manufacturing the same 有权具有多个杂质区的固态成像装置及其制造方法公开(公告)号：US06765246B2
公开(公告)日：2004-07-20
申请号：US10226375
申请日：2002-08-21
申请人： Makoto Inagaki
发明人： Makoto Inagaki
IPC分类号： H01L27148
CPC分类号： H01L27/14656 , H01L27/14603 , H01L27/14643 , H01L27/14806 , H01L27/14887
摘要： The solid-state imaging device according to one embodiment of the present invention includes a semiconductor substrate, a plurality of photoelectric conversion regions arrayed in the vertical direction and the horizontal direction on the surface of the substrate, and an electric charge transfer region disposed between the photoelectric conversion regions adjacent in the horizontal direction of the substrate. The substrate comprises a n-type semiconductor substrate, a first p-type impurity region formed on the n-type semiconductor substrate, a semiconductor regions formed on the first p-type impurity region, and a second p-type impurity region disposed below the electric charge transfer region. The photoelectric conversion region and the electric charge transfer region are n-type impurity regions formed on the surface portion of the semiconductor region. A third p-type impurity region is formed in at least one region selected from the group consisting of a region located between the photoelectric conversion regions adjacent in the vertical direction and a region located below the second p-type impurity region between the photoelectric conversion regions adjacent in the horizontal direction in the semiconductor region.
摘要翻译： 根据本发明的一个实施例的固态成像装置包括半导体衬底，在衬底的表面上沿垂直方向和水平方向排列的多个光电转换区域，以及设置在衬底之间的电荷转移区域 在基板的水平方向上相邻的光电转换区域。 基板包括n型半导体基板，形成在n型半导体基板上的第一p型杂质区域，形成在第一p型杂质区域上的半导体区域和设置在第一p型杂质区域的第二p型杂质区域 电荷转移区域。 光电转换区域和电荷转移区域是形成在半导体区域的表面部分上的n型杂质区域。 在选自由垂直方向相邻的光电转换区域和位于光电转换区域之间的第二p型杂质区域下方的区域中的至少一个区域中形成第三p型杂质区域 在半导体区域中在水平方向上相邻。
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公开(公告)号：US07830433B2
公开(公告)日：2010-11-09
申请号：US11568565
申请日：2005-07-27
IPC分类号： H04N3/14 , H04N5/335 , H01L27/00 , H01L31/062 , H01L31/113
CPC分类号： H04N5/335 , H01L27/14609 , H01L27/14623 , H01L27/14643
摘要： An amplification type solid state imaging device in use includes at least a light-receiving portion 10 formed by arranging on a semiconductor substrate 7 one-dimensionally or two-dimensionally a plurality of pixels that convert incident light to signal charge and output electric signals corresponding to the amount of the signal charge, a reader for reading out sequentially the electric signals from the respective pixels, a noise rejection circuit 11 for suppressing spurious signals for the electric signals read out by the reader, and a first light-shielding layer 1 positioned on the upper part of the light-receiving portion 10 so as to restrict entry of light into parts other than photoelectric conversion portions 10a of the pixels. Furthermore, a second light-shielding layer 2 for restricting entry of light into the noise rejection circuit 11 is provided on the upper part of the noise rejection circuit 11.
摘要翻译： 使用的放大型固态成像装置至少包括通过在半导体衬底7上一维或二维地排列将入射光转换成信号电荷的多个像素而形成的光接收部分10，并输出对应于 信号电荷的量，从各个像素依次读出电信号的读取器，用于抑制由读取器读出的电信号的寄生信号的噪声抑制电路11以及位于第一遮光层1上的第一遮光层1 光接收部10的上部，以限制光进入像素的光电转换部10a以外的部分。 此外，在噪声抑制电路11的上部设置有用于限制入射到噪声抑制电路11中的第二遮光层2。
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公开(公告)号：US08319869B2
公开(公告)日：2012-11-27
申请号：US12797313
申请日：2010-06-09
IPC分类号： H04N3/14
CPC分类号： H04N5/3598
摘要： A solid-state imaging device which can, in response to the problem of black-crush occurring in an image when strong light is enters the device, positively detect black-crush in a state in which a variance margin has been secured. The solid-state imaging device outputs a luminance signal in accordance with an amount of received light, and includes: a pixel circuit having a light-receiving element; a signal output circuit having a sampling transistor which outputs, from a second signal output line, a luminance signal in accordance with the amount of light received by the light-receiving element, based on an output signal from the pixel circuit; and a high-intensity judgment circuit which is coupled by the pixel circuit and a judgment input coupling capacitor, judges whether or not light entering the light-receiving element is of high intensity based on the output signal from the pixel circuit, and in the case of judging the entering light to be of high intensity, outputs a luminance signal indicating high intensity.
摘要翻译： 一种固态成像装置，其能够响应于当强光进入装置时在图像中发生黑色挤压的问题，在确定了方差裕量的状态下，可以积极地检测黑色粉碎。 固态成像装置根据接收光的量输出亮度信号，包括：具有受光元件的像素电路; 信号输出电路，具有采样晶体管，其基于来自所述像素电路的输出信号，从第二信号输出线输出根据所述受光元件接收的光量的亮度信号; 以及由像素电路和判断输入耦合电容器耦合的高强度判断电路，基于来自像素电路的输出信号判断进入光接收元件的光是否高度强度，在这种情况下 将入射光判定为高强度，输出表示高强度的亮度信号。
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公开(公告)号：US07936386B2
公开(公告)日：2011-05-03
申请号：US11621682
申请日：2007-01-10
CPC分类号： H04N5/3598
摘要： A solid-state imaging device which can, in response to the problem of black-crush occurring in an image when strong light is enters the device, positively detect black-crush in a state in which a variance margin has been secured. The solid-state imaging device outputs a luminance signal in accordance with an amount of received light, and includes: a pixel circuit having a light-receiving element; a signal output circuit having a sampling transistor which outputs, from a second signal output line, a luminance signal in accordance with the amount of light received by the light-receiving element, based on an output signal from the pixel circuit; and a high-intensity judgment circuit which is coupled by the pixel circuit and a judgment input coupling capacitor, judges whether or not light entering the light-receiving element is of high intensity based on the output signal from the pixel circuit, and in the case of judging the entering light to be of high intensity, outputs a luminance signal indicating high intensity.
摘要翻译： 一种固态成像装置，其能够响应于当强光进入装置时在图像中发生黑色挤压的问题，在确保了方差裕量的状态下，可以积极地检测黑色粉碎。 固态成像装置根据接收光的量输出亮度信号，包括：具有受光元件的像素电路; 信号输出电路，具有采样晶体管，其基于来自所述像素电路的输出信号，从第二信号输出线输出根据所述受光元件接收的光量的亮度信号; 以及由像素电路和判断输入耦合电容器耦合的高强度判断电路，基于来自像素电路的输出信号判断进入光接收元件的光是否高度强度，在这种情况下 将入射光判定为高强度，输出表示高强度的亮度信号。
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公开(公告)号：US20100309356A1
公开(公告)日：2010-12-09
申请号：US12864674
申请日：2009-01-27
申请人： Isao Ihara , Kunihiko Hara , Makoto Inagaki , Hiroshi Kubo
发明人： Isao Ihara , Kunihiko Hara , Makoto Inagaki , Hiroshi Kubo
IPC分类号： H04N5/335
CPC分类号： H04N5/3658 , H04N5/374 , H04N5/3742
摘要： A solid state imaging device according to an aspect of the present invention includes: a pixel array (21) including pixel units arranged in rows and columns; a vertical shift register (26) which selects one of the rows of the pixel array (21); a column amplifier unit (22) including column amplifiers each of which is provided for a corresponding one of the columns and amplifies a column signal provided from the pixel unit included in the selected row; and a limiting circuit which limits an output voltage of the column amplifier to no more than a predetermined voltage that can be changed, wherein the limiting circuit changes the predetermined voltage according to switching between a normal mode and a high-sensitivity mode.
摘要翻译： 根据本发明的一个方面的固态成像装置包括：像素阵列（21），包括以行和列排列的像素单元; 选择像素阵列（21）的行之一的垂直移位寄存器（26）; 列列放大器单元（22），其包括列放大器，每个列放大器用于对应的一列，并放大从包括在所选行中的像素单元提供的列信号; 以及将列放大器的输出电压限制在不大于可以改变的预定电压的限制电路，其中限制电路根据正常模式和高灵敏度模式之间的切换来改变预定电压。
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