公开(公告)号：US08124543B2

公开(公告)日：2012-02-28

申请号：US12785860

申请日：2010-05-24

Applicant: Hideki Yagi ,  Kenji Koyama ,  Hiroyuki Yoshinaga ,  Kuniaki Ishihara

Inventor： Hideki Yagi ,  Kenji Koyama ,  Hiroyuki Yoshinaga ,  Kuniaki Ishihara

IPC: H01L21/302

CPC classification number: H01S5/2231 ,  H01S5/0425 ,  H01S5/12 ,  H01S5/2086 ,  H01S5/22 ,  H01S5/2213 ,  H01S5/2214 ,  H01S5/2222 ,  H01S5/2275 ,  H01S2301/176

Abstract: A method for manufacturing an LD is disclosed. The LD has a striped structure including an optical active region. The striped structure is buried with resin, typically benzo-cyclo-butene (BCB). The method to form an opening in the BCB layer has tri-steps etching of the RIE. First step etches the BCB layer partially by a mixed gas of CF4 and O2, where CF4 has a first partial pressure, second step etches the photo-resist patterned on the top of the BCB layer by a mixed gas of CF4 and O2, where CF4 in this step has the second partial pressure less than the first partial pressure, and third step etches the BCB left in the first step by mixed gas of CF4 and O2, where CF4 in this step has the third partial pressure greater than the second partial pressure.

Abstract translation: 公开了一种制造LD的方法。 LD具有包括光学有源区域的条纹结构。 条状结构被树脂掩埋，通常是苯并环丁烯（BCB）。 在BCB层中形成开口的方法具有RIE的三步蚀刻。 第一步通过CF4和O2的混合气体部分地蚀刻BCB层，其中CF4具有第一分压，第二步通过CF4和O2的混合气体蚀刻BCB层顶部的光致抗蚀剂，其中CF4 在该步骤中具有小于第一分压的第二分压，第三步骤通过CF4和O2的混合气体蚀刻第一步中留下的BCB，其中该步骤中的CF 4具有大于第二分压的第三分压 。

公开(公告)号：US20110275375A1

公开(公告)日：2011-11-10

申请号：US13128075

申请日：2009-11-06

Applicant: Hiroaki Yamagishi ,  Hideki Yagi ,  Masaaki Suzuki

Inventor： Hiroaki Yamagishi ,  Hideki Yagi ,  Masaaki Suzuki

IPC: H04W36/00

CPC classification number: H04W36/0055

Abstract: A mobile station (UE) according to the present invention includes: a reception unit (11) configured to receive broadcast information in a second cell, after a handover from a first cell to the second cell in response to received handover information; and a control unit (12) configured to continue a communication performed in the second cell by using the broadcast information when the reception unit (11) succeeds in receiving the broadcast information, and to perform a re-establishment process when it is determined that the reception unit (11) has failed to receive the broadcast information.

Abstract translation: 根据本发明的移动台（UE）包括：接收单元（11），被配置为在响应于接收到的切换信息从第一小区切换到第二小区之后在第二小区中接收广播信息; 以及控制单元（12），被配置为当所述接收单元（11）成功接收到所述广播信息时，通过使用所述广播信息来继续在所述第二小区中执行的通信，并且当确定所述广播信息 接收单元（11）未能接收广播信息。

公开(公告)号：US07957446B2

公开(公告)日：2011-06-07

申请号：US12464262

申请日：2009-05-12

Applicant: Hideki Yagi

Inventor： Hideki Yagi

IPC: H01S5/00

CPC classification number: H01S5/125 ,  B82Y20/00 ,  H01S5/0654 ,  H01S5/1039 ,  H01S5/1215 ,  H01S5/1231 ,  H01S5/2009 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3211 ,  H01S5/341 ,  H01S5/34306

Abstract: A semiconductor laser includes a first optical confinement layer, a plurality of first quantum wires and buried semiconductor regions disposed on a first area, a plurality of second quantum wires and buried semiconductor regions disposed on a second area, an active layer disposed on a third area, and a second optical confinement layer. The plurality of first quantum wires and the buried semiconductor regions constitute a first distributed Bragg reflector, and the plurality of second quantum wires and the buried semiconductor regions constitute a second distributed Bragg reflector. The third area is disposed between the first area and the second area. The buried semiconductor regions have a refractive index different from the average refractive index of the first quantum wires and the average refractive index of the second quantum wires. These distributed Bragg reflectors form a DBR laser having a cavity length defined by the length of the active layer.

Abstract translation: 半导体激光器包括第一光限制层，多个第一量子线和设置在第一区上的掩埋半导体区，多个第二量子线和设置在第二区上的掩埋半导体区，设置在第三区上的有源层 和第二光限制层。 多个第一量子线和埋入半导体区域构成第一分布布拉格反射器，并且多个第二量子线和掩埋半导体区域构成第二分布布拉格反射器。 第三区域设置在第一区域和第二区域之间。 埋入的半导体区域具有与第一量子线的平均折射率和第二量子线的平均折射率不同的折射率。 这些分布式布拉格反射器形成具有由有源层的长度限定的空腔长度的DBR激光器。

公开(公告)号：US06990026B2

公开(公告)日：2006-01-24

申请号：US10828239

申请日：2004-04-21

Applicant: Hideki Yagi

Inventor： Hideki Yagi

IPC: G11C7/00

CPC classification number: G06F21/78 ,  G06F2221/2137

Abstract: A CPU locks a memory card attached to a card mount with a password by a lock/unlock processing according to an access limit application program, and unlocks the lock based on a predetermined condition. The function to control the secrecy of data recorded on the card is thus improved.

Abstract translation: CPU根据访问限制应用程序通过锁定/解锁处理来锁定附加到卡座的存储卡，并通过锁定/解锁处理，并且基于预定条件解锁锁定。 因此，改善了记录在卡上的数据的保密性的功能。

公开(公告)号：US06200918B1

公开(公告)日：2001-03-13

申请号：US09210750

申请日：1998-12-15

Applicant: Takagimi Yanagitani ,  Hideki Yagi ,  Seiki Imagawa ,  Hitoshi Kubo

Inventor： Takagimi Yanagitani ,  Hideki Yagi ,  Seiki Imagawa ,  Hitoshi Kubo

IPC: C04B3550

CPC classification number: C04B35/44 ,  H01J61/302

Abstract: A TAG, LAG or YbAG anti-corrosion layer of which Si content is 100 ppm or under and total content of Ca and Mg is 200 ppm or under is provided on the internal surface of a tubular YAG base of a discharge envelope. The mean particle size of the anti-corrosion layer is 20 &mgr;m or over, and the mean particle size of the base is 15 &mgr;m or under.

Abstract translation: 在放电外壳的管状YAG基体的内表面上设置有Si含量为100ppm以下的TAG，LAG或YbAG防腐层，Ca和Mg的总含量为200ppm以下。 防腐层的平均粒径为20μm以上，基材的平均粒径为15μm以下。

公开(公告)号：US06169107A

公开(公告)日：2001-01-02

申请号：US08544292

申请日：1995-10-17

Applicant: Masahumi Kitano ,  Kazuhiro Nakano ,  Hideki Yagi ,  Naohito Ohashi ,  Atsuyuki Kojima ,  Tsuyoshi Noguchi ,  Akira Miyagishi

Inventor： Masahumi Kitano ,  Kazuhiro Nakano ,  Hideki Yagi ,  Naohito Ohashi ,  Atsuyuki Kojima ,  Tsuyoshi Noguchi ,  Akira Miyagishi

IPC: A61K31404

CPC classification number: C07D209/08 ,  C07D209/42

Abstract: Novel indoloylguanidine derivatives shown by formula (1), wherein R1 represents one or more, the same or different substituent(s) which is selected from the group consisting of a hydrogen atom, an alkyl group, a substituted alkyl group, an alkenyl group, an alkynyl group, a cycloalkyl group, a halogen atom, nitro group, an acyl group, carboxyl group, an alkoxycarbonyl group, an aromatic group, and a group shown by formula: —OR3, —NR6R7, —SO2NR6R7 or —S(O)nR40; and R2 represents a hydrogen atom, an alkyl group, a substituted alkyl group, a cycloalkyl group, hydroxy group, an alkoxy group or a group shown by formula: —CH2R20; and which inhibit the Na+/H+ exchanger activity and are useful for the treatment and prevention of a disease caused by increased Na+/H+ exchanger activity, such as hypertension, arrhythmia, angina pectoris, cardiac hypertrophy, diabetes, disorders associated with ischemia or ischemic reperfusion, cerebro-ischemic disorders; or diseases caused by excessive cell proliferation.

Abstract translation: 式（1）所示的新型吲哚酰基胍衍生物，其中R1表示一个或多个选自氢原子，烷基，取代的烷基，烯基， 炔基，环烷基，卤素原子，硝基，酰基，羧基，烷氧基羰基，芳香族基团和由下式表示的基团：-OR3，-NR6R7，-SO2NR6R7或-S（O ）nR40; R2表示氢原子，烷基，取代的烷基，环烷基，羟基，烷氧基或由式-CH2R20表示的基团; 并且其抑制Na + / H +交换活性，并且可用于治疗和预防由升高的Na + / H +交换活性引起的疾病，例如高血压，心律失常，心绞痛，心脏肥大，糖尿病，与缺血或缺血再灌注相关的疾病 ，脑缺血障碍; 或由过度细胞增殖引起的疾病。

公开(公告)号：US6111592A

公开(公告)日：2000-08-29

申请号：US976507

申请日：1997-11-24

Applicant: Hideki Yagi

Inventor： Hideki Yagi

IPC: G06F13/28 ,  G06F3/14 ,  G06F13/38

CPC classification number: G06F13/28

Abstract: When successive DMA transfer is to be performed between a plurality of areas of a memory and a DVD decoder, pairs of start memory addresses and transfer counter values corresponding to the plurality of areas are respectively set in a plurality of DMA register sets. The contents of these DMA register sets are sequentially read in a predetermined order, and a plurality of DMA data transfer operations are repeatedly executed by a DMA controller. Immediately after one DMA data transfer is completed, next DMA data transfer starts in accordance with the contents of the next DMA register set. Successive DMA data transfer can be executed continuously.

Abstract translation: 当在存储器的多个区域和DVD解码器之间执行连续DMA传输时，对应于多个区域的开始存储器地址和传送计数器值的对分别设置在多个DMA寄存器组中。 这些DMA寄存器组的内容按预定的顺序依次读取，并且DMA控制器重复地执行多个DMA数据传送操作。 在一个DMA数据传输完成之后，下一个DMA数据传输将根据下一个DMA寄存器集的内容开始。 可以连续执行连续的DMA数据传输。

公开(公告)号：US4528045A

公开(公告)日：1985-07-09

申请号：US549403

申请日：1983-11-07

Applicant: Yoshimasa Tanaka ,  Minoru Uchino ,  Hideki Yagi ,  Iwao Teshima ,  Kensei Matsuki

Inventor： Yoshimasa Tanaka ,  Minoru Uchino ,  Hideki Yagi ,  Iwao Teshima ,  Kensei Matsuki

IPC: C22C37/10 ,  C22C37/04

CPC classification number: C22C37/04

Abstract: A heat-resisting spheroidal graphite cast iron comprises carbon ranging from 1.8 to 3.4% by weight, silicon ranging from 3.5 to 6% by weight, manganese ranging from 0.7 to 1.25% by weight, chromium ranging from 3 to 5% by weight, nickel ranging from 18 to 24% by weight, an element for spheroidizing graphite, not more than 0.1% by weight, and the balance being substantially iron, thereby attaining excellent oxidation-resistance and oxide film adherance characteristics while being kept inexpensive.

Abstract translation: 一种耐热球墨铸铁包括碳重量范围为1.8至3.4％重量，硅为3.5至6％重量，锰为0.7至1.25％重量，铬为3至5％重量的镍，镍 为18〜24重量％，石墨球化元素为0.1重量％以下，余量基本为铁，从而获得优异的抗氧化性和氧化膜接合性，同时保持廉价。

公开(公告)号：US08673664B2

公开(公告)日：2014-03-18

申请号：US13534057

申请日：2012-06-27

Applicant: Hideki Yagi

Inventor： Hideki Yagi

IPC: H01L21/00

CPC classification number: H01L31/105 ,  G02B6/131 ,  G02B6/42 ,  G02B2006/121

Abstract: A process to form a photodiode (PD) with the waveguide structure is disclosed. The PD processes thereby reduces a scattering of the parasitic resistance thereof. The process includes steps to form a PD mesa stripe, to bury the PD mesa stripe by the waveguide region, to etch the PD mesa stripe and the waveguide region to form the waveguide mesa stripe. In the etching, the lower contact layer plays a role of the etching stopper.

Abstract translation: 公开了一种形成具有波导结构的光电二极管（PD）的工艺。 因此PD工艺减少了其寄生电阻的散射。 该过程包括形成PD台面条纹，通过波导区域掩埋PD台面条纹以蚀刻PD台面条纹和波导区域以形成波导台面条纹的步骤。 在蚀刻中，下接触层起蚀刻停止的作用。

公开(公告)号：US08450128B2

公开(公告)日：2013-05-28

申请号：US13267952

申请日：2011-10-07

Applicant: Hideki Yagi ,  Hiroyuki Yoshinaga

Inventor： Hideki Yagi ,  Hiroyuki Yoshinaga

IPC: H01L21/00

CPC classification number: H01S5/0202 ,  H01S5/0203 ,  H01S5/22 ,  H01S5/2213

Abstract: A method for producing a semiconductor optical device includes the steps of forming a semiconductor region including a ridge structure on a substrate; forming an insulating film on the semiconductor region; forming a non-photosensitive resin region on the insulating film, forming a first mask that defines a scribe area; forming the scribe area by etching using the first mask; after removing the first mask, forming an insulating layer by etching the insulating film, forming an electrode on the ridge structure and the non-photosensitive resin region to produce a substrate product; forming a scribe line on a surface of the semiconductor region in the scribe area of the substrate product; and cutting the product along the scribe line to form a semiconductor laser bar.

Abstract translation: 一种制造半导体光学器件的方法包括以下步骤：在衬底上形成包括脊结构的半导体区域; 在半导体区域上形成绝缘膜; 在所述绝缘膜上形成非感光性树脂区域，形成限定划线区域的第一掩模; 通过使用第一掩模的蚀刻形成划线区域; 在去除第一掩模之后，通过蚀刻绝缘膜形成绝缘层，在脊结构和非感光树脂区上形成电极以产生基底产物; 在基板产品的划线区域中的半导体区域的表面上形成划线; 并沿着划线切割产品以形成半导体激光条。