公开(公告)号：US20160284673A1

公开(公告)日：2016-09-29

申请号：US14403467

申请日：2014-03-20

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiangchun KONG ,  Zhanfeng CAO ,  Qi YAO ,  Luke DING

IPC: H01L25/075 ,  H01L33/50 ,  H01L33/56 ,  H01L27/15

CPC classification number: H01L25/0753 ,  H01L27/14621 ,  H01L27/153 ,  H01L27/156 ,  H01L27/3241 ,  H01L33/50 ,  H01L33/502 ,  H01L33/56

Abstract: A full-color display panel includes a plurality of sub-pixel units. The sub-pixel unit includes an LED unit and a filter layer transmitting light of a specific color. The LED unit includes an LED semiconductor chip emitting light of a specific color. The LED semiconductor chips of the plurality of sub-pixel units are homochromatic LED semiconductor chips emitting light of a same color. In each sub-pixel unit, a position of the filter layer corresponds to a position of the LED semiconductor chip, and the filter layer is located on a side of the LED semiconductor chip that emits light.

Abstract translation: 全色显示面板包括多个子像素单元。 子像素单元包括LED单元和透射特定颜色的光的滤光层。 LED单元包括发射特定颜色的光的LED半导体芯片。 多个子像素单元的LED半导体芯片是发射相同颜色的光的同色LED半导体芯片。 在每个子像素单元中，滤光层的位置对应于LED半导体芯片的位置，滤光层位于发光的LED半导体芯片的一侧。

公开(公告)号：US20160027927A1

公开(公告)日：2016-01-28

申请号：US14429059

申请日：2014-07-25

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhengliang LI ,  Zhen LIU ,  Luke DING ,  Bin ZHANG ,  Zhanfeng CAO ,  Guanbao HUI

IPC: H01L29/786 ,  H01L29/45 ,  C22C9/00 ,  H01L29/66 ,  H01L21/443 ,  H01L21/4763 ,  H01L27/12 ,  H01L29/49

CPC classification number: H01L21/02304 ,  C22C9/00 ,  H01L21/28008 ,  H01L29/4908 ,  H01L29/78603 ,  H01L29/78606 ,  H01L41/0815

Abstract: A thin film transistor, a manufacturing method thereof and an array substrate are provided. The thin film transistor comprises: a gate electrode (11), a source electrode (15) and a drain electrode (16), and the thin film transistor further comprises a buffer layer (11) which is directly provided at one side or both sides of at least one of the gate electrode (11), the source electrode (15) and the drain electrode (16), wherein, the buffer layer (11) and at least one of the gate electrode (11), the source electrode (15) and the drain electrode (16) directly contacting the buffer layer (11) are conformal. Therefore, the adhesion between an electrode of the thin film transistor and a film layer contacting it is improved and at the same time an atom in the electrode of the thin film transistor is effectively prevented from diffusing to the film layer connected with it, and the reliability of the thin film transistor is improved and the production cost is reduced.

Abstract translation: 提供薄膜晶体管，其制造方法和阵列基板。 薄膜晶体管包括：栅电极（11），源电极（15）和漏电极（16），薄膜晶体管还包括缓冲层（11），其直接设置在一侧或两侧 的栅电极（11），源电极（15）和漏电极（16）中的至少一个，其中，缓冲层（11）和栅电极（11），源电极 15）和与缓冲层（11）直接接触的漏电极（16）是共形的。 因此，薄膜晶体管的电极和与其接触的膜层之间的粘附性得到改善，并且同时有效地防止了薄膜晶体管的电极中的原子扩散到与其连接的膜层，并且 提高了薄膜晶体管的可靠性，降低了生产成本。

公开(公告)号：US20210296406A1

公开(公告)日：2021-09-23

申请号：US17264283

申请日：2020-05-12

Applicant: Hefei Xinsheng Optoelectronics Technology Co., Ltd. ,  BOE Technology Group Co., Ltd.

Inventor： Jingang FANG ,  Luke DING ,  Jun LIU ,  Bin ZHOU ,  Jun CHENG

IPC: H01L27/32 ,  H01L51/56 ,  H01L51/52

Abstract: The present disclosure relates to the technical field of display, and discloses an array substrate, a preparation method therefor, and a display device. When dielectric layers, such as a buffer layer, an interlayer dielectric layer, and a gate insulation layer, are formed between a source-drain electrode and a substrate, the thickness of at least one dielectric layer among said dielectric layers underneath a first through hole for connecting a drain electrode and an anode is increased, which is to say that the drain electrode is raised to be further away from the substrate, causing the drain electrode to be closer to a surface of a planarization layer that faces away from the substrate, i.e., reducing the thickness of a portion of the planarization layer above the drain electrode.

公开(公告)号：US20200168687A1

公开(公告)日：2020-05-28

申请号：US16441422

申请日：2019-06-14

Applicant: Hefei Xinsheng Optoelectronics Technology Co., Ltd. ,  BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Yingbin HU ,  Liangchen YAN ,  Ce ZHAO ,  Yuankui DING ,  Yang ZHANG ,  Yongchao HUANG ,  Luke DING ,  Jun LIU

IPC: H01L27/32 ,  H01L51/56

Abstract: A fabrication method for fabricating a thin-film transistor includes: forming a light shielding layer on a substrate; forming a buffer layer covering the light shielding layer, and forming a semiconductor material layer stacked on a surface of the buffer layer away from the substrate; forming a through hole penetrating through the buffer layer and the semiconductor material layer; patterning the semiconductor material layer to form an active layer covering a partial region of the buffer layer; forming a gate insulator layer on a surface of the active layer away from the substrate and a gate stacked on a surface of the gate insulator layer away from the substrate; forming a source and a drain on the surface of the buffer layer away from the substrate; and forming a dielectric layer covering the gate, the source, the drain, and the buffer layer, and being recessed into the through hole to form a groove.

公开(公告)号：US20170213975A1

公开(公告)日：2017-07-27

申请号：US15223465

申请日：2016-07-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Leilei CHENG ,  Dongfang WANG ,  Yongchao HUANG ,  Bin ZHOU ,  Luke DING ,  Min HE

IPC: H01L51/00 ,  H01L51/52 ,  H01L51/56 ,  H01L27/32

CPC classification number: H01L51/0012 ,  H01L27/3244 ,  H01L51/0016 ,  H01L51/5253 ,  H01L51/56 ,  H01L2227/323

Abstract: A method for fabricating an Organic Light-Emitting Diode (OLED) display panel is provided. The method includes arranging Thin-Film Transistor (TFT) devices on one side of a substrate and a function layer on the other side of the substrate to form a laminate including both the TFT devices and the function layer, attaching the laminate onto a loading platform such that the function layer included in the laminate faces towards the loading platform, and conducting a process on the laminate to form an organic electroluminescent material layer on surfaces of the TFT devices.