公开(公告)号：US20170192112A1

公开(公告)日：2017-07-06

申请号：US14986001

申请日：2015-12-31

Applicant: General Electric Company

Inventor： Peter Micah Sandvik ,  Stanislav Ivanovich Soloviev ,  Sergei Ivanovich Dolinsky ,  James Jay McMahon ,  Sabarni Palit

IPC: G01T1/24 ,  H01L31/115

CPC classification number: G01T1/248 ,  G01T1/2018 ,  G01T1/208 ,  G01T1/249 ,  H01L27/14663 ,  H01L31/02027 ,  H01L31/107 ,  H01L31/115

Abstract: A solid state photomultiplier includes at least one microcell configured to generate an initial analog signal when exposed to optical photons. The solid state photomultiplier further includes a quench circuit electrically coupled with the at least one microcell. The quench circuit includes at least one quench resistor configured to exhibit a substantially constant temperature coefficient of resistance over a selected temperature range.

公开(公告)号：US20170031038A1

公开(公告)日：2017-02-02

申请号：US14815107

申请日：2015-07-31

Applicant: General Electric Company

Inventor： James Wilson Rose ,  David Leo McDaniel ,  Jianjun Guo ,  Sergei Ivanovich Dolinsky ,  Adrian Ivan

IPC: G01T1/20 ,  H01L27/146 ,  G01T1/29

CPC classification number: G01T1/2018 ,  G01T1/208 ,  G01T1/2985 ,  H01L27/14663 ,  H01L27/14685

Abstract: A photon detector having an optical transparent plate and photodiode array interconnected by an optical light guide array. The optical light guide array including elements providing a transmission line between the optical transparent plate and the photodiode array, where the position of one or more optical light guide elements is formed to adjust for a miss-registered photodiode individual element. A method for assembling the photon detector includes depositing a non-wetting film on opposing surfaces of the optical transparent plate and/or photodiode array, altering the deposited non-wetting film in regions of individual photodiode elements, dispensing an optical coupler adhesive on the optical transparent plate and photodiode array to form adhesive beads, aligning the opposing surfaces, assembling the opposing surfaces so that the corresponding optical coupler adhesive beads contact each other, and curing the optical coupler adhesive to form a structurally merged photon detector having optical light guide elements.

Abstract translation: 一种光子检测器，具有通过光学导光阵列互连的光学透明板和光电二极管阵列。 所述光导引阵列包括在所述光学透明板和所述光电二极管阵列之间提供传输线的元件，其中形成一个或多个光导元件的位置以调整未注册的光电二极管单独元件。 用于组装光子检测器的方法包括在光学透明板和/或光电二极管阵列的相对表面上沉积非润湿膜，改变在各个光电二极管元件的区域中沉积的非润湿膜，在光学器件上分配光学耦合器粘合剂 透明板和光电二极管阵列以形成粘合剂珠，对准相对表面，组装相对表面，使得相应的光耦合器粘合剂珠彼此接触，并固化光耦合器粘合剂以形成具有光学导光元件的结构上合并的光子检测器。

公开(公告)号：US09541656B2

公开(公告)日：2017-01-10

申请号：US14136667

申请日：2013-12-20

Applicant: GENERAL ELECTRIC COMPANY

Inventor： Sergei Ivanovich Dolinsky ,  David Leo McDaniel

IPC: G01D18/00 ,  G01T7/00 ,  G01T1/208

CPC classification number: G01T7/005 ,  G01T1/208

Abstract: In accordance with the present approach, a dark current is measured for one or more detector elements and used to determine a gain or gain compensation for the respective detector elements. In certain embodiments, the dark current is used to determine a temperature for the respective detector element and the temperature is used to determine the gain or gain compensation. In other embodiments, the dark current is used to calculate the gain or gain compensation for the respective detector element without calculating an intermediate temperature value, such as via the use of a transfer function.

Abstract translation: 根据本方法，测量一个或多个检测器元件的暗电流，并用于确定各个检测器元件的增益或增益补偿。 在某些实施例中，暗电流用于确定相应检测器元件的温度，并且使用温度来确定增益或增益补偿。 在其他实施例中，暗电流用于计算相应检测器元件的增益或增益补偿，而不用例如通过使用传递函数来计算中间温度值。

公开(公告)号：US20160084970A1

公开(公告)日：2016-03-24

申请号：US14851518

申请日：2015-09-11

Applicant: General Electric Company

Inventor： JianJun Guo ,  Sergei Ivanovich Dolinsky ,  David Leo McDaniel ,  Jonathan David Short

IPC: G01T1/24

CPC classification number: G01T1/248 ,  G01T1/247 ,  G01T1/249 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14663 ,  H01L31/107 ,  H04N5/32

Abstract: Embodiments of a solid state photomultiplier are provided herein. In some embodiments, a photosensor may include a sensing element; and readout electronics, wherein the sensing element is AC coupled to the readout electronics. In some embodiments, a solid state photomultipler may include a microcell having; a sensing element; and readout electronics, wherein the sensing element is AC coupled to the readout electronics.

Abstract translation: 本文提供了固态光电倍增管的实施例。 在一些实施例中，光电传感器可以包括感测元件; 和读出电子器件，其中感测元件被AC耦合到读出电子器件。 在一些实施例中，固态光电倍增管可以包括具有： 传感元件; 和读出电子器件，其中感测元件被AC耦合到读出电子器件。

公开(公告)号：US09207334B1

公开(公告)日：2015-12-08

申请号：US14586050

申请日：2014-12-30

Applicant: General Electric Company

Inventor： Mikiko Ito ,  David Leo McDaniel ,  Sergei Ivanovich Dolinsky ,  Geng Fu

IPC: G01T1/10 ,  G01T1/29 ,  G01T1/20 ,  G01T1/24

CPC classification number: G01T1/2985 ,  G01T1/2018 ,  G01T1/208

Abstract: Methods and systems for a light sensor for a gamma ray detector of a positron emission tomography (PET) imaging system is provided. The methods and systems include a plurality of micro-cells forming a micro-cell array. The methods and systems include a set of signal traces electrically coupling the plurality of micro-cells to the pin-out. The set of signal traces are configured to define a non-orthogonal signal path from each of the micro-cells to the pin-out.

Abstract translation: 提供了用于正电子发射断层摄影（PET）成像系统的γ射线检测器的光传感器的方法和系统。 所述方法和系统包括形成微电池阵列的多个微电池。 方法和系统包括将多个微电池电耦合到引脚输出的一组信号迹线。 该组信号迹线被配置为定义从每个微小区到引脚输出的非正交信号路径。

公开(公告)号：US20150285942A1

公开(公告)日：2015-10-08

申请号：US14244979

申请日：2014-04-04

Applicant: General Electric Company

Inventor： Stanislav Ivanovich Soloviev ,  Peter Micah Sandvik ,  Sergei Ivanovich Dolinsky ,  Cheng-Po Chen ,  Helene Claire Climent ,  Sabarni Palit

IPC: G01V5/08 ,  E21B47/00

CPC classification number: G01V5/08 ,  E21B47/00 ,  G01T1/2006 ,  G01T1/2018 ,  G01T1/24 ,  G01T1/248 ,  G01V5/04

Abstract: A method and an apparatus for detecting photons are disclosed. The apparatus includes a solid state photo multiplier device having a plurality of microcells that have a band gap greater than about 1.7 eV at 25° C. The solid state photo multiplier device further includes an integrated quenching device and a thin film coating associated with each of the microcells. The solid state photo multiplier device disclosed herein operates in a temperature range of about −40° C. to about 275° C.

Abstract translation: 公开了一种用于检测光子的方法和装置。 该装置包括具有在25℃下具有大于约1.7eV的带隙的多个微小区的固态光电倍增器装置。固态光电倍增器装置还包括集成的淬火装置和与每个微电池相关联的薄膜涂层 微电池。 本文公开的固态光电倍增器装置在约-40℃至约275℃的温度范围内操作。

公开(公告)号：US20150108328A1

公开(公告)日：2015-04-23

申请号：US14061557

申请日：2013-10-23

Applicant: General Electric Company

Inventor： Jianjun Guo ,  Chang Lyong Kim ,  David Leo McDaniel ,  James Lindgren Malaney ,  Sergei Ivanovich Dolinsky

IPC: H04N5/361 ,  G01J1/18

CPC classification number: H04N5/361 ,  G01J1/18 ,  G01J2001/186 ,  G01J2001/444 ,  G01T1/249 ,  H01L31/02164 ,  H04N5/2176

Abstract: A compensating current is applied at one or more points in a signal processing path to compensate for one or both of a dark or offset current present in an input signal. In certain implementations, the dark or offset current is present in a signal generated by a photomultiplier device. The dark or offset current may be monitored in an output of the signal processing path and, the monitoring being used to determine how much compensation is needed in the signal processing path and to allocate where in the signal processing path the compensation current will be applied.

Abstract translation: 在信号处理路径中的一个或多个点处施加补偿电流以补偿输入信号中存在的暗或偏移电流中的一个或两个。 在某些实施方案中，暗或偏移电流存在于由光电倍增器装置产生的信号中。 可以在信号处理路径的输出中监视暗或偏移电流，并且监视用于确定在信号处理路径中需要多少补偿并且在信号处理路径中分配补偿电流将被施加的位置。

公开(公告)号：US20140184197A1

公开(公告)日：2014-07-03

申请号：US13727959

申请日：2012-12-27

Applicant: GENERAL ELECTRIC COMPANY

Inventor： Sergei Ivanovich Dolinsky

IPC: G01R15/24

CPC classification number: G01R31/2837 ,  G01J1/08 ,  G01J1/4228 ,  G01J11/00 ,  G01T1/2018 ,  G01T1/208

Abstract: Exemplary embodiments are directed to characterizing a solid state photomultiplier (SSPM). The SSPM can be exposed to a light pulse that triggers a plurality of microcells of the SSPM and an output signal of the SSPM generated in response to the light pulse can be processed. The output signal of the SSPM can be proportional to a gain of the SSPM and a quantity of microcells in the SSPM and a value of an electrical parameter of the SSPM can be determined based on a relationship between the output signal of the SSPM and an over voltage applied to the SSPM.

Abstract translation: 示例性实施例涉及表征固态光电倍增管（SSPM）。 SSPM可以暴露于触发SSPM的多个微单元的光脉冲，并且可以处理响应于光脉冲而产生的SSPM的输出信号。 SSPM的输出信号可以与SSPM的增益成比例，并且SSPM中的微小区的数量和SSPM的电参数的值可以基于SSPM的输出信号与上一个之间的关系来确定 施加到SSPM的电压。

公开(公告)号：US20210130688A1

公开(公告)日：2021-05-06

申请号：US16668299

申请日：2019-10-30

Applicant: General Electric Company

Inventor： Alok Mani Srivastava ,  Sergei Ivanovich Dolinsky

IPC: C09K11/77 ,  C01F17/00 ,  G01T1/202

Abstract: A scintillator for positron emission tomography is provided. The scintillator includes a garnet compound of a formula of A3B2C3O12 and an activator ion consisting of cerium. A3 is A2X. X consists of at least one lanthanide element. A2 is selected from the group consisting of (i), (ii), (iii), and any combination thereof, wherein (i) consists of at least one lanthanide element, (ii) consists of at least one group I element selected from the group consisting of Na and K, and (iii) consists of at least one group II element selected from the group consisting of Ca, Sr, and Ba. B2 consists of Sn, Ti, Hf, Zr, and any combination thereof. C3 consists of Al, Ga, Li, and any combination thereof. The garnet compound is doped with the activator ion.

公开(公告)号：US10371835B2

公开(公告)日：2019-08-06

申请号：US14992635

申请日：2016-01-11

Applicant: General Electric Company

Inventor： Jianjun Guo ,  Adrian Ivan ,  Sergei Ivanovich Dolinsky ,  Geng Fu

IPC: G01T1/24 ,  H01L27/146 ,  G01T1/208

Abstract: A silicon photomultiplier array including a plurality of microcells arranged in rows and columns. A plurality of circuit traces connecting microcell output ports to the array pixel output port, with one or more impedance matching networks connected to at least one of the circuit traces. The impedance matching networks can be connected between each row circuit trace and the pixel output port. Impedance matching networks can be located between junctions of adjacent microcell output ports and row circuit traces.