公开(公告)号：US5742417A

公开(公告)日：1998-04-21

申请号：US706858

申请日：1996-09-03

Applicant: David Whitney

Inventor： David Whitney

IPC: H04B3/03 ,  H04B1/58 ,  H04M1/738 ,  H04M11/00 ,  H04M11/06 ,  H04B10/00

CPC classification number: H04M11/06 ,  H04B1/587 ,  H04L25/0266 ,  H04M1/738

Abstract: A data access arrangement (DAA) having a transhybrid circuit for separating a transmit signal from a received signal by providing a transmit cancellation signal to the inverting input of a servo-feedback differential amplifier on the receive channel of the DAA. The cancellation signal is provided by a photodiode optically coupleable with a light emitting diode within a optical isolator on the transmission channel of the DAA. The gain of the cancellation signal can be independently controlled.

公开(公告)号：US5506152A

公开(公告)日：1996-04-09

申请号：US299717

申请日：1994-09-01

Applicant: David Whitney

Inventor： David Whitney

IPC: H01L31/111 ,  H01L49/00

CPC classification number: H01L31/1113 ,  Y10S148/136

Abstract: An optically triggered silicon controlled rectifier (SCR) circuit (20) has a number of semiconductor layers diffused into an N- substrate (21). The layers form an SCR (50) having a P+ anode region (25), a P+ gate region (24), and an N+ cathode region (27). An adjustable base-shunt resistance, in the form of a P- channel depletion mode MOSFET (Q3), connects between the SCR gate region and the cathode region. The MOSFET includes a MOSFET gate region (35), a P+ drain region (24), a P-- channel (26), and a P+ source region (23). The substrate also accommodates a PN photodiode (22, D1) which connects to the MOSFET gate region for switching the MOSFET on and off in response to incident optical radiation (L) thereon. The SCR gate region also comprises photosensitive material. When sufficient optical radiation illuminates the photodiode and the SCR gate region, the MOSFET is turned off and the SCR is triggered, permitting anode-to-cathode current to flow. When insufficient optical radiation is present, the MOSFET is turned on and provides a low-resistance shunt path which prevents the SCR gate region from triggering the SCR.

Abstract translation: 光触发可控硅整流器（SCR）电路（20）具有扩散到N基板（21）中的多个半导体层。 这些层形成具有P +阳极区域（25），P +栅极区域（24）和N +阴极区域（27）的SCR（50）。 以P沟道耗尽型MOSFET（Q3）的形式的可调节分路电阻连接在SCR栅极区域和阴极区域之间。 MOSFET包括MOSFET栅极区域（35），P +漏极区域（24），P沟道（26）和P +源极区域（23）。 衬底还容纳连接到MOSFET栅极区域的PN光电二极管（22，D1），用于响应于其上的入射光辐射（L）而开启和关闭MOSFET。 SCR栅极区域还包括感光材料。 当足够的光辐射照射光电二极管和SCR栅极区域时，MOSFET被关断，SCR被触发，允许阳极到阴极的电流流动。 当存在不足的光辐射时，MOSFET导通，并提供低阻分流路径，防止SCR栅极区域触发SCR。