Voltage stabilizer with a minimal voltage drop designed to withstand
high voltage transients
    22.
    发明授权
    Voltage stabilizer with a minimal voltage drop designed to withstand high voltage transients 失效
    具有设计用于承受高电压瞬变的最小电压降的稳压器

    公开(公告)号:US4801860A

    公开(公告)日:1989-01-31

    申请号:US159290

    申请日:1988-02-23

    IPC分类号: G05F1/56 G05F1/571

    CPC分类号: G05F1/571 G05F1/56

    摘要: A voltage stabilizer with a minimal voltage drop designed to withstand high voltage transients includes a "series" type voltage regulator circuit with an NPN power transistor. The collector terminal of this transistor is connected to ground via a capacitor and to the cathode of a diode whose anode forms an input terminal of the stabilizer. The base terminal of the power transistor is connected to the collector terminals of first and second PNP transistors which have their emitter terminals respectively connected to the cathode and anode of the diode and their base terminals connected to a circuit biasing circuit.

    Antisaturation circuit for integrated PNP transistor with intervention
characteristic definable according to a preset function
    23.
    发明授权
    Antisaturation circuit for integrated PNP transistor with intervention characteristic definable according to a preset function 失效
    集成PNP晶体管的抗饱和电路,具有根据预设功能可定义的干预特性

    公开(公告)号:US4786827A

    公开(公告)日:1988-11-22

    申请号:US879160

    申请日:1986-06-26

    CPC分类号: H03K17/0422 G05F1/569

    摘要: Described is an antisaturation circuit for an integrated PNP transistor characterized by a comparator circuit comprising two transistors and a current generator whose output current corresponds to a pre-established function, e.g., an exponential function, of the emitter current of said transistor. The changing of state of the comparator circuit, as determined by said pre-established function of said current generator, is determined by the drop of the V.sub.CE voltage of the transistor below a preset minimum value, with a portion of the conduction current of one of the two transistors of the comparator circuit utilized for increasing the forced .beta. of the transistor. This limits the degree of its saturation, as well as the leakage current toward the substrate.

    摘要翻译: 描述了用于集成PNP晶体管的抗饱和电路,其特征在于包括两个晶体管的比较器电路和电流发生器,其输出电流对应于所述晶体管的发射极电流的预先建立的功能,例如指数函数。 由所述电流发生器的所述预先建立的功能确定的比较器电路的状态的改变由晶体管的VCE电压降到预定的最小值以下,其中导电电流的一部分为 比较器电路的两个晶体管用于增加晶体管的强制β。 这限制了其饱和度以及朝向衬底的漏电流。

    Loop-type voltage regulating device
    24.
    发明授权
    Loop-type voltage regulating device 有权
    环型电压调节装置

    公开(公告)号:US06833688B2

    公开(公告)日:2004-12-21

    申请号:US09740737

    申请日:2000-12-18

    IPC分类号: H02H706

    摘要: A loop-type voltage regulating device, particularly for regulating a voltage of an automotive electric system that includes at least one thermal engine, a voltage regulator and an alternator operative to deliver a system regulated-voltage signal to and receive a regulation signal from the voltage regulator, the voltage regulating device including a control unit within the regulating loop, which unit is connected between the thermal engine and the voltage regulator and is adapted to supply the latter with a signal related to the engine operation.

    摘要翻译: 一种环路型电压调节装置,特别是用于调节汽车电气系统的电压,其包括至少一个热引擎,电压调节器和交流发电机,其可操作以将系统稳压电压信号传递到电压 电压调节装置包括调节回路内的控制单元,该单元连接在热力发动机和电压调节器之间,并且适于向后者提供与发动机操作相关的信号。

    Bidirectional electronic switch
    25.
    发明授权
    Bidirectional electronic switch 有权
    电控单元保护电路

    公开(公告)号:US06292341B1

    公开(公告)日:2001-09-18

    申请号:US09295842

    申请日:1999-04-21

    IPC分类号: H02H318

    CPC分类号: H03K17/0822

    摘要: A protection circuit of a diagnostic output line (K-line) of a control unit for protection of the control unit in the event of a ground disconnection or of a “below ground” condition is provided. The diagnostic output line includes a first interface DMOS transistor with a source connected to ground and a drain coupled to the diagnostic output line through a second DMOS transistor with a source connected to the output line and a drain connected to the source of the first DMOS transistor. The protection circuit also includes a comparator for the voltage of the diagnostic output line with the potential of the ground node, and a two-input logic gate, whose output controls a current generator forcing a current, limited by a resistor, on the diagnostic output line.

    摘要翻译: 提供用于在接地断开或“低于地面”情况下保护控制单元的控制单元的诊断输出线(K线)的保护电路。 诊断输出线包括具有源极连接到地的第一接口DMOS晶体管和通过连接到输出线的源极的第二DMOS晶体管耦合到诊断输出线的漏极,以及连接到第一DMOS晶体管的源极的漏极 。 保护电路还包括用于具有接地节点的电位的诊断输出线的电压的比较器,以及双输入逻辑门,其输出控制电流发生器强制由电阻器限制的电流在诊断输出端 线。

    Low-drop voltage regulator
    26.
    发明授权
    Low-drop voltage regulator 失效
    低压稳压器

    公开(公告)号:US5373225A

    公开(公告)日:1994-12-13

    申请号:US941665

    申请日:1992-09-08

    IPC分类号: G05F1/56 H02J1/00

    CPC分类号: G05F1/56

    摘要: A low-drop voltage regulator includes a P-type power transistor having an input terminal connected to a supply source, an output terminal connected to a load, and a control terminal driven by the output of an operational amplifier having its non-inverting input connected to a reference voltage source and its inverting input connected to the output terminal of the power transistor. To improve the regulation characteristics of the regulator without jeopardizing stability, even under normally critical conditions, provision is made for a feedback network including a capacitive component between the output and inverting input of the operational amplifier.

    摘要翻译: 一个低压降稳压器包括一个P型功率晶体管,它具有一个连接到一个电源的输入端,一个连接到一个负载的输出端,以及一个由其同相输入连接的运算放大器的输出驱动的控制端 到参考电压源,其反相输入连接到功率晶体管的输出端。 为了在不危及稳定性的情况下改善调节特性,即使在正常临界条件下,也提供了包括运算放大器的输出和反相输入之间的电容分量的反馈网络。

    H-bridge circuit with protection against crossover conduction
    27.
    发明授权
    H-bridge circuit with protection against crossover conduction 失效
    H桥电路,防止交叉传导

    公开(公告)号:US5309347A

    公开(公告)日:1994-05-03

    申请号:US947105

    申请日:1992-09-18

    摘要: An H-bridge circuit which includes four power transistors (an npn pull-down and a pnp pull-up for each of the output terminals). Two control circuits are connected to drive these transistors in a complementary crossover configuration, so that each control circuit can turn on the pull-up transistor on one side of the load and the pull-down transistor on the opposite side of the load. Each of the power transistors is paralleled (base-to-base) by a smaller transistor which provides a scaled current output (proportional to that of the corresponding power transistor) to the opposite control circuit. The control circuit includes static current-thresholding disable logic, which prevents turn-on until the currents through the opposite power devices have declined to threshold levels. Thus, as long as either control circuit is driving one of the pull-up transistors into in the on-state, the other control circuit will not be able to turn on the pull-down transistor which is in series with the active pull-up transistor. This efficiently prevents any condition of unlimited crowbar current, without adding any excess delay or causing any high-impedance condition at the output.

    摘要翻译: 一个H桥电路,包括四个功率晶体管(npn下拉和每个输出端子的pnp上拉)。 连接两个控制电路以以互补的交叉配置驱动这些晶体管,使得每个控制电路可以在负载的一侧上的上拉晶体管和负载的相对侧上的下拉晶体管导通。 每个功率晶体管由较小的晶体管并联(基极到基极),其提供与相对的控制电路成比例的电流输出(与对应的功率晶体管成比例)。 控制电路包括静态电流阈值禁用逻辑,其可以防止导通,直到通过相对的功率器件的电流已经下降到阈值电平。 因此,只要任一控制电路将上拉晶体管中的一个驱动到导通状态,则另一控制电路将不能接通与有源上拉串联的下拉晶体管 晶体管。 这有效地防止了无限制的撬棒电流的任何条件,而不会增加任何超出延迟或在输出端引起任何高阻抗条件。

    "> Inductive load discharge current recirculation circuit with selectable
    28.
    发明授权
    Inductive load discharge current recirculation circuit with selectable "fast" and "low" modes 失效
    具有可选“快速”和“低”模式的感性负载放电电流再循环电路

    公开(公告)号:US4916378A

    公开(公告)日:1990-04-10

    申请号:US380220

    申请日:1989-07-14

    CPC分类号: H03K17/08146

    摘要: A circuit for recirculating the discharge current of an inductive load driven from the high side of the supply at two different recirculation voltages which may be selected for implementing a slow or a fast recirculation of the current advantageously employs a single power element represented by an NPN transistor functionally connected in parallel to the load. During a driving phase of the load a slow recirculation of the discharge current is implemented by delivering to the base of the recirculation NPN transistor a current sufficient to keep it saturated. upon switching off the load, when a fast recirculation of the dischage current through the recirculation NPN transistor is desired, delivery of the saturating current to the base of the recirculation transistor is interrupted and the transistor remains conducting having a diode and a zener diode in opposition thereto connected in series between ground and the base of the recirculation NPN transistor for permitting the recirculation at a voltage substantially equal to the sum of the voltage drop through the first diode, the zener voltage and the base-emitter voltage of the recirculation NPN transistor.

    Electronic circuit for amplitude variation and level displacement of a
signal
    29.
    发明授权
    Electronic circuit for amplitude variation and level displacement of a signal 失效
    用于信号幅度变化和电平位移的电子电路

    公开(公告)号:US4595846A

    公开(公告)日:1986-06-17

    申请号:US558882

    申请日:1983-12-07

    申请人: Marco Morelli

    发明人: Marco Morelli

    CPC分类号: H03G7/001 F02P7/067 H03K5/01

    摘要: A first circuit branch subjected to an input voltage and including a first resistance and a second circuit branch subjected to a reference voltage and including a second resistance are connected to a coupling circuit, which is responsive to the current circulating in the first branch to cause a current of the same value to circulate in the second branch. An output voltage taken at a point between said coupling circuit and said second resistance constitutes the modified signal.

    摘要翻译: 经受输入电压并且包括第一电阻的第一电路分支和受到参考电压并包括第二电阻的第二电路分支连接到耦合电路,耦合电路响应于在第一分支中循环的电流而导致 电流的相同值在第二个分支中循环。 在所述耦合电路和所述第二电阻之间的点处获得的输出电压构成修改的信号。

    INTEGRATED PRESSURE SENSOR WITH A HIGH FULL-SCALE VALUE
    30.
    发明申请
    INTEGRATED PRESSURE SENSOR WITH A HIGH FULL-SCALE VALUE 审中-公开
    具有高全尺寸值的集成压力传感器

    公开(公告)号:US20080196491A1

    公开(公告)日:2008-08-21

    申请号:US12018054

    申请日:2008-01-22

    IPC分类号: G01L9/06 G01L5/28

    CPC分类号: G01L1/18 B60T2270/82

    摘要: In an integrated pressure sensor with a high full-scale value, a monolithic body of semiconductor material has a first and a second main surface, opposite and separated by a substantially uniform distance. The monolithic body has a bulk region, having a sensitive portion next to the first main surface, upon which pressure acts. A first piezoresistive detection element is integrated in the sensitive portion and has a variable resistance as a function of the pressure. The bulk region is a solid and compact region and has a thickness substantially equal to the distance.

    摘要翻译: 在具有高满量程值的集成压力传感器中,半导体材料的整体主体具有第一和第二主表面,相反并且基本上均匀的距离分开。 整体式主体具有主体区域,其具有靠近第一主表面的敏感部分,在该区域上施加压力。 第一压阻检测元件集成在敏感部分中,并且具有作为压力的函数的可变电阻。 本体区域是坚固紧凑的区域,其厚度基本上等于距离。