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    PHOTOELECTRIC CONVERSION DEVICE AND IMAGING SYSTEM
    21.
    发明申请
    PHOTOELECTRIC CONVERSION DEVICE AND IMAGING SYSTEM 有权

    公开(公告)号：US20170180657A1

    公开(公告)日：2017-06-22

    申请号：US15351965

    申请日：2016-11-15

    Applicant: CANON KABUSHIKI KAISHA

    Inventor： Kazuaki Tashiro

    IPC: H04N5/355 ,  H04N5/378

    CPC classification number: H04N5/3575 ,  H04N5/335 ,  H04N5/369 ,  H04N5/3745 ,  H04N5/37452

    Abstract: A photoelectric conversion device includes a plurality of pixels arranged to form a plurality of columns, each of the pixels including a photoelectric conversion unit including first and second electrodes, a photoelectric conversion layer between the first and second electrodes, and an insulating layer between the photoelectric conversion layer and the second electrode, an amplifier unit connected to the second electrode and configured to output a signal, and a reset unit for supplying a reset voltage to the second electrode. In accordance with a voltage applied between the first and second electrodes, an accumulating operation for accumulating signal charges and a removing operation for removing the signal charges are alternately executed, the reset unit supplies the reset voltage for at least a part of a horizontal scanning period, and the period during which the reset unit supplies the reset voltage is longer than the horizontal scanning period.

    Solid-state image sensor and camera
    23.
    发明授权
    Solid-state image sensor and camera 有权
    固态图像传感器和相机

    公开(公告)号：US09455289B2

    公开(公告)日：2016-09-27

    申请号：US14255109

    申请日：2014-04-17

    Applicant: CANON KABUSHIKI KAISHA

    Inventor： Kazuaki Tashiro

    IPC: H01L27/146 ,  H04N9/04

    CPC classification number: H01L27/14621 ,  H01L27/14609 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14649 ,  H04N5/374 ,  H04N9/045

    Abstract: A solid-state image sensor includes a plurality of first pixels and a plurality of second pixels. Each of the plurality of first pixels includes a first filter having a visible light transmittance higher than an infrared light transmittance, and a first photoelectric converter configured to receive visible light transmitted through the first filter, and each of the plurality of second pixels includes a second filter having an infrared light transmittance higher than a visible light transmittance, and a second photoelectric converter configured to receive infrared light transmitted through the second filter. The plurality of second pixels are divided into a plurality of groups each includes at least two second pixels. The solid-state image sensor includes a synthesizer configured to synthesize a signal from signals of the at least two second pixels included in each group.

    Abstract translation: 固态图像传感器包括多个第一像素和多个第二像素。 多个第一像素中的每一个包括具有比红外光透射率高的可见光透射率的第一滤光器，以及被配置为接收透过第一滤光器的可见光的第一光电转换器，并且多个第二像素中的每一个包括第二 具有比可见光透射率高的红外光透射率的滤光器和被配置为接收透过第二滤光器的红外光的第二光电转换器。 多个第二像素被分成多个组，每组包括至少两个第二像素。 固态图像传感器包括合成器，被配置为从包括在每个组中的至少两个第二像素的信号合成信号。

    Image pickup device
    24.
    发明授权
    Image pickup device 有权
    图像拾取装置

    公开(公告)号：US09362319B2

    公开(公告)日：2016-06-07

    申请号：US14515373

    申请日：2014-10-15

    Applicant: CANON KABUSHIKI KAISHA

    Inventor： Kazuaki Tashiro ,  Shin Kikuchi

    IPC: H01L29/66 ,  H01L27/146 ,  H01L31/02

    CPC classification number: H01L27/14603 ,  H01L27/14616 ,  H01L27/1463 ,  H01L29/66 ,  H01L31/02

    Abstract: An image pickup device according to the present invention is an image pickup device in which a plurality of pixel are arranged in a semiconductor substrate. Each of the plurality of pixels includes a photoelectric conversion element, a floating diffusion (FD) region, a transfer gate that transfers charges in the first semiconductor region to the FD region, and an amplification transistor whose gate is electrically connected to the FD region. The photoelectric conversion element has an outer edge which has a recessed portion in plan view, a source region and a drain region of the amplification transistor are located in the recessed portion, and the FD region is surrounded by the photoelectric conversion region or is located in the recessed portion in plan view.

    Abstract translation: 根据本发明的图像拾取装置是其中多个像素被布置在半导体衬底中的图像拾取装置。 多个像素中的每一个包括光电转换元件，浮动扩散（FD）区域，将第一半导体区域中的电荷转移到FD区域的转移栅极，以及栅极电连接到FD区域的放大晶体管。 光电转换元件具有在平面图中具有凹部的外边缘，放大晶体管的源极区域和漏极区域位于凹部中，并且FD区域被光电转换区域包围或位于 平面图中的凹陷部分。

    SOLID-STATE IMAGING DEVICE, DRIVING METHOD THEREOF, AND IMAGING SYSTEM
    25.
    发明申请
    SOLID-STATE IMAGING DEVICE, DRIVING METHOD THEREOF, AND IMAGING SYSTEM 审中-公开
    固态成像装置，其驱动方法和成像系统

    公开(公告)号：US20150215562A1

    公开(公告)日：2015-07-30

    申请号：US14681249

    申请日：2015-04-08

    Applicant: CANON KABUSHIKI KAISHA

    Inventor： Kazuaki Tashiro

    IPC: H04N5/376 ,  H04N5/378

    CPC classification number: H04N5/3765 ,  G01S17/10 ,  G01S17/89 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14641 ,  H04N5/3592 ,  H04N5/37457 ,  H04N5/378

    Abstract: A solid-state imaging device comprises a first pixel group includes a first photoelectric conversion unit that converts into electric charges reflection light pulses from an object irradiated with an irradiation light pulse, a first electric charge accumulation unit accumulating the electric charges in synchrony with turning on the irradiation light pulses, and a first reset unit resetting the electric charges; and a second pixel group includes a second photoelectric conversion unit that converts the reflection light into electric charges, a second electric charge accumulation unit that accumulates the electric charges synchronously with a switching the irradiation light pulses from on to off, and a second reset unit that releases a reset of the electric charges converted by the second photoelectric conversion unit.

    Abstract translation: 一种固态成像装置，包括：第一像素组，包括：第一光电转换单元，其将从照射光脉冲照射的物体转换为电荷反射光脉冲;第一电荷累积单元，与导通同步地积累电荷 照射光脉冲和复位电荷的第一复位单元; 并且第二像素组包括将反射光转换成电荷的第二光电转换单元，与从接通切换到关闭的照射光脉冲同步地累积电荷的第二电荷累积单元和第二复位单元， 释放由第二光电转换单元转换的电荷的复位。

    Image pickup device and image pickup system
    27.
    发明授权
    Image pickup device and image pickup system 有权

    公开(公告)号：US10446594B2

    公开(公告)日：2019-10-15

    申请号：US15364072

    申请日：2016-11-29

    Applicant: CANON KABUSHIKI KAISHA

    Inventor： Kazuaki Tashiro ,  Tatsuhito Goden

    IPC: H01L27/146 ,  H04N5/378

    Abstract: An image pickup device according to an embodiment includes a substrate on which a plurality of pixel circuits are disposed, a semiconductor layer disposed on the substrate, a first electrode disposed on the semiconductor layer, and a second electrode disposed between the semiconductor layer and the substrate. A continuous portion of the semiconductor layer includes a light receiving region disposed between the first electrode and the second electrode and a charge hold region different from the light receiving region.

    Photoelectric conversion device, imaging system, and mobile apparatus
    28.
    发明授权
    Photoelectric conversion device, imaging system, and mobile apparatus 有权

    公开(公告)号：US10419695B2

    公开(公告)日：2019-09-17

    申请号：US15892889

    申请日：2018-02-09

    Applicant: CANON KABUSHIKI KAISHA

    Inventor： Tomoya Sasago ,  Kazuaki Tashiro

    IPC: H04N3/14 ,  H04N5/335 ,  H01L27/00 ,  H04N5/355 ,  H01L27/146 ,  H04N5/3745 ,  G06T7/55 ,  H04N9/04 ,  H01L31/0203 ,  H01L29/94 ,  H01L31/0224

    Abstract: Provided is a photoelectric conversion device including: a pixel array including a plurality of pixels each including a first electrode, a second electrode, and a photoelectric conversion layer arranged between the first and second electrodes, in which the pixels include a first pixel having a first color filter and a second pixel having a second color filter different from the first color filter; a potential supply line that supplies an electric potential to the first electrodes of the first pixel and the second pixel; and control lines configured to supply different electric potentials to the second electrodes of the first pixel and the second pixel, respectively, to compensate a difference between a dependency of a sensitivity of the first pixel on a bias voltage applied to the photoelectric conversion layer and a dependency of a sensitivity of the second pixel on a bias voltage applied to the photoelectric conversion layer.

    Photoelectric conversion device and imaging system
    29.
    发明授权
    Photoelectric conversion device and imaging system 有权

    公开(公告)号：US10297625B2

    公开(公告)日：2019-05-21

    申请号：US15821083

    申请日：2017-11-22

    Applicant: CANON KABUSHIKI KAISHA

    Inventor： Kazuaki Tashiro

    IPC: H04N5/374 ,  H04N5/378 ,  H04N5/369 ,  H01L27/146

    Abstract: A photoelectric conversion device includes a blocking unit located between a photoelectric conversion layer and a second electrode unit and configured to cause electric charge having a first polarity to be injected from the photoelectric conversion layer into the second electrode unit and to prevent electric charge having a second polarity opposite to the first polarity from being injected from the photoelectric conversion layer into the second electrode unit, and a voltage supply unit configured to supply a second voltage to one of a first electrode unit and the second electrode unit such that electric charge having the first polarity is prevented from being injected from the photoelectric conversion layer into the second electrode unit.

    Solid-state imaging device for a distance sensor transferring charges from one pixel while resetting another pixel in a same period
    30.
    发明授权
    Solid-state imaging device for a distance sensor transferring charges from one pixel while resetting another pixel in a same period 有权

    公开(公告)号：US10277850B2

    公开(公告)日：2019-04-30

    申请号：US15711964

    申请日：2017-09-21

    Applicant: CANON KABUSHIKI KAISHA

    Inventor： Kazuaki Tashiro

    IPC: H04N5/376 ,  H04N5/378 ,  H04N5/3745 ,  H04N5/359 ,  H01L27/146 ,  G01S17/89 ,  G01S17/10

    Abstract: A solid-state imaging device comprises a first pixel group includes a first photoelectric conversion unit that converts into electric charges reflection light pulses from an object irradiated with an irradiation light pulse, a first electric charge accumulation unit accumulating the electric charges in synchrony with turning on the irradiation light pulses, and a first reset unit resetting the electric charges; and a second pixel group includes a second photoelectric conversion unit that converts the reflection light into electric charges, a second electric charge accumulation unit that accumulates the electric charges synchronously with a switching the irradiation light pulses from on to off, and a second reset unit that releases a reset of the electric charges converted by the second photoelectric conversion unit.

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