摘要:
The invention relates to a wavelength-maintaining purely optical signal regenerator to which degraded optical signals with a high data rate are transmitted and regenerated without opto-electronic or wavelength conversion using compact, non-linear semiconductor components with low power consumption. Said regenerator comprises: an optical clock regeneration stage (2) which generates synchronized stable optical reset clock pulses for the data signal (1); at least one semiconductor component that is non-linear with reference to the transmission characteristics for the data signal (5,9); means for transmitting part of the degraded data signal (1) to the clock regeneration stage (2) being configured in such a way that a timed optical reset to achieve transparency occurs; a time-slice control unit (3) which is connected upstream of the semiconductor component (5,9) and defines a sequence of data bits in the time gap between two respective clock pulses, means for transmitting the other part of the degraded data signal (1) to the semiconductor component (5,9) at a power at which the semiconductor component (5,9) relaxing from the condition of transparency exhibits a nonlinear transmission characteristic for the data signal, and a blocking unit (6) that is connected downstream of the semiconductor component (5,9) and that removes the reset clock pulses from the data signal path.
摘要:
An inexpensive and compact arrangement for the electrical control and fast modulation of THz transmitters and THz measuring systems is proposed, wherein said arrangement is stable, requires no mechanical movements and operates with a purely electric control, consumes little power and also has a high speed potential for the phase modulation. This is achieved by replacing the components known from the state of the art, namely two lasers, the beam splitters, the couplers and the mechanically moved delay line, with a compact monolithic or hybrid integrated chip (10), particularly a so-called optical master chip without moving parts that comprises at least the two lasers (1, 2), the beam splitters (S3.1, S3.2), the couplers (K3.1, K3.2) and a phase modulator (4.1) for one of the laser waves such that the two generated beat signals are respectively delivered to different chip outputs (6, 7) in order to separately control the THz transmitter and the local oscillator.
摘要:
A semiconductor laser includes an active region designed as a DFB laser and a passive resonator section that is optically coupled to the active region. The active region has a first section with a Bragg grating and a second section with a second Bragg grating that differs from the first Bragg grating. The two Bragg gratings differ from one another such that one and only one main mode of a DFB mode spectrum of the first section overlaps with one of two main modes of a DFB mode spectrum of the second section.
摘要:
A Q-switched semiconductor laser is supposed to facilitate high-frequency laser modulation with low currents or voltage ranges. According to the invention, a laser of this type consists of at least one continually pumped active medium and two optically coupled resonators at least one of which is passive, both resonators having different mode combs corresponding to the Nonius principle, at least one resonator mirror taking the form of a reflector with strongly dispersive reflection characteristics in the laser wavelength range selected by the double resonator, the index of refraction of the passive resonator and/or reflector capable of being adjusted electronically. With this device, the reflectivity of the laser wavelength can be adjusted in such a way that, with a fixed effective amplification by electrical modulation of the reflectivity of the resonator reflector with strongly dispersive reflection characteristics, the laser threshold can be raised or lowered so as to switch the semiconductor laser on or off.
摘要:
A measurement method is presented for the determination of low levels of optical absorption in any material, with at least a quasi-simultaneous detection of the transmission intensities of a measurement light beam and a reference light beam, the wavelengths of which are different, such that, essentially, the measurement light is absorbed by the material to be tested, and with a joint analog acquisition of the detected measurement and reference signals, taking into consideration the natural difference in intensities between the measurement light beam and the reference light beam.