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21.发明申请公开(公告)号：US20210335848A1
公开(公告)日：2021-10-28
申请号：US16484414
申请日：2018-10-12
Inventor： Yang Zhang , Tongshang Su , Bin Zhou , Wei Li , Wei Song , Jun Liu
IPC: H01L27/12
Abstract: A substrate for an electronic device includes an insulating layer; a via extending into the insulating layer; a light shielding layer in the via; and a thin film transistor comprising an active layer on the light shielding layer and in the via. The light shielding layer is configured to shield light from irradiating on the active layer.
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公开(公告)号：US20210335604A1
公开(公告)日：2021-10-28
申请号：US16487552
申请日：2019-02-20
Inventor： Yuankui Ding , Heekyu Kim , Liangchen Yan , Ce Zhao , Bin Zhou , Yingbin Hu , Wei Song , Dongfang Wang
Abstract: A method of fabricating a display substrate is provided. The method includes forming a conductive layer on a base substrate; and performing a chemical vapor deposition process to form an oxide layer on a side of an exposed surface of the conductive layer away from the base substrate, the exposed surface of the conductive layer including copper, the oxide layer formed to include an oxide of a target element M. The chemical vapor deposition process is performed using a mixture of a first reaction gas including oxygen and a second reaction gas including the target element M, at a reaction temperature in a range of 200 Celsius degrees to 280 Celsius degrees. A mole ratio of oxygen element to the target element M in the mixture of the first reaction gas and the second reaction gas is in a range of 40:1 to 60:1.
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公开(公告)号：US11069758B2
公开(公告)日：2021-07-20
申请号：US16436201
申请日：2019-06-10
Inventor： Wei Song , Liangchen Yan , Ce Zhao , Dongfang Wang , Bin Zhou , Yuankui Ding , Jun Liu , Yingbin Hu , Wei Li
Abstract: The present disclosure relates to the display technology, and provides an OLED display substrate, a method for manufacturing the OLED display substrate and a display device. The method includes: forming pixel definition layer transition patterns with metal; and oxidizing the pixel definition layer transition patterns to form an insulative pixel definition layer.
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24.发明申请公开(公告)号：US20200152458A1
公开(公告)日：2020-05-14
申请号：US16442830
申请日：2019-06-17
Inventor： Wei Song , Ce Zhao , Heekyu Kim , Ning Liu , Yuankui Ding , Wei Li , Yingbin Hu
Abstract: A metal oxide film and a manufacturing method thereof, a thin film transistor and an array substrate are provided. The manufacturing method of the metal oxide film includes: forming a metal oxide film on a base substrate; and suppling a negative ion to the metal oxide film for a preset time period by performing a anodization method, to convert a portion of metal ions in the metal oxide film into a metal oxide.
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25.发明授权公开(公告)号：US10043108B2
公开(公告)日：2018-08-07
申请号：US15202526
申请日：2016-07-05
Inventor： Xuan Zhang , Hongxia Yang , Sungho Kim , Wei Song , Yaorong Liu , Ling Tong , Lin Liu , Yonghong Zhang , Peng Chen , Tao Yang , Tianyu Xu , Zenghong Li
Abstract: A method and an apparatus are provided for detecting and classifying an active matrix organic light emitting diode panel. The method includes: comparing images to be compared which are collected from the active matrix organic light emitting diode panel with template images in a preset template image library; classifying the active matrix organic light emitting diode panel depending on results of the comparing.
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Patent Agency Ranking
公开(公告)号：US12261179B2
公开(公告)日：2025-03-25
申请号：US17898761
申请日：2022-08-30
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
IPC: H01L27/12 , H01L21/02 , H01L29/66 , H01L29/786
Abstract: The present disclosure provides a method for preparing an interlayer insulating layer and a method for manufacturing a thin film transistor, and a thin film transistor, belongs to the field of display technology, and can solve the problem of poor resistance to breakdown of the interlayer insulating layer in the related art. The method for preparing an interlayer insulating layer includes the following steps: forming a silicon oxide layer with a first reaction gas and forming a silicon nitride layer with a second reaction gas such that hydrogen content in the silicon nitride layer is less than or equal to hydrogen content in the silicon oxide layer.
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公开(公告)号：US12245466B2
公开(公告)日：2025-03-04
申请号：US17417334
申请日：2020-11-05
Inventor： Wei Li , Jingjing Xia , Bin Zhou , Yang Zhang , Guangyao Li , Wei Song , Xuanang Wang , Qinghe Wang , Liusong Ni , Jun Liu , Liangchen Yan , Ming Wang , Jingang Fang
IPC: H10K59/122 , H10K50/842 , H10K59/12 , H10K59/121 , H10K71/00
Abstract: The present disclosure provides an array substrate, a method for manufacturing the array substrate, a display panel and a display device. The array substrate includes: a substrate; a planarization layer on a side of the substrate; a pixel defining layer configured to define a pixel opening region and located on a side of the planarization layer away from the substrate; an anode in the pixel opening region and on a side of the planarization layer away from the substrate. The array substrate further includes an intermediate insulation layer between the planarization layer and the pixel defining layer. The intermediate insulation layer has a chemical polarity between a chemical polarity of the planarization layer and a chemical polarity of the pixel defining layer.
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28.发明授权公开(公告)号：US11957002B2
公开(公告)日：2024-04-09
申请号：US17414751
申请日：2020-12-29
Inventor： Wei Li , Jingjing Xia , Bin Zhou , Shengping Du , Yang Zhang , Wei Song , Qinghua Guo
IPC: H10K59/122 , H10K59/12 , H10K59/80
CPC classification number: H10K59/122 , H10K59/1201 , H10K59/8792
Abstract: An array substrate, a preparing method thereof, a display panel and a display apparatus are disclosed. The array substrate includes: a base substrate (1); a driving circuit structure (2) on the base substrate (1); a planarization layer (3) and a plurality of electrode structures (4) successively located on a side, facing away from the base substrate (1), of the driving circuit structure (2); insulation structures (5) in gap areas between adjacent electrode structures (4); and pixel defining structures (6) on a side, facing away from the base substrate (1), of the insulation structures (5). The thickness of the insulation structures (5) is not smaller than the thickness of the electrode structures (4). An orthographic projection of the pixel defining structures (6) on the base substrate (1) at least completely covers the insulation structures (5).
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公开(公告)号：US11622490B2
公开(公告)日：2023-04-04
申请号：US17346539
申请日：2021-06-14
Inventor： Wei Song , Liangchen Yan , Ce Zhao , Dongfang Wang , Bin Zhou , Yuankui Ding , Jun Liu , Yingbin Hu , Wei Li
IPC: H10K59/122 , H10K50/81 , H10K71/00 , H10K77/10 , H10K59/12 , H10K102/00
Abstract: The present disclosure relates to the display technology, and provides an OLED display substrate, a method for manufacturing the OLED display substrate and a display device. The method includes: forming pixel definition layer transition patterns with metal; and oxidizing the pixel definition layer transition patterns to form an insulative pixel definition layer.
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公开(公告)号：US11367792B2
公开(公告)日：2022-06-21
申请号：US16971085
申请日：2019-11-01
Inventor： Wei Song , Liangchen Yan , Ce Zhao , Heekyu Kim , Yuankui Ding , Leilei Cheng , Yingbin Hu , Wei Li , Guangyao Li , Qinghe Wang
IPC: H01L21/00 , H01L27/00 , H01L29/00 , H01L29/786 , H01L27/12 , H01L29/24 , H01L21/02 , H01L29/66 , H01L27/32
Abstract: The present disclosure is related to a thin film transistor. The thin film transistor may include an active layer; a gate insulating layer on the active layer; and a gate and a plurality of metal films on the gate insulating layer. The plurality of metal films may be spaced apart from the gate, and insulated from the gate and the active layer.
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