LIGHT EMITTING DEVICE, VEHICLE HEADLAMP, ILLUMINATION DEVICE, AND VEHICLE
    23.
    发明申请
    LIGHT EMITTING DEVICE, VEHICLE HEADLAMP, ILLUMINATION DEVICE, AND VEHICLE 有权
    发光装置,车辆头灯,照明装置和车辆

    公开(公告)号:US20120140504A1

    公开(公告)日:2012-06-07

    申请号:US13297008

    申请日:2011-11-15

    CPC classification number: F21V9/16 F21S41/14 F21S41/16 F21S45/47 F21V9/30

    Abstract: A headlamp 1 includes (i) a laser element 2 for emitting a laser beam, (ii) a light emitting section 4, including a sealing material made from an inorganic material, for emitting fluorescence upon receiving the laser beam emitted from the laser element 2, and (iii) a heat sink 7 for releasing, via a contact surface of the heat sink 7 which contact surface is in contact with the light emitting section 4, heat generated in the light emitting section 4 in response to the laser beam emitted onto the light emitting section 4, the light emitting section 4 existing within a range which is determined on the basis of the contact surface and with which desired heat releasing efficiency is obtained.

    Abstract translation: 前照灯1包括(i)用于发射激光束的激光元件2,(ii)包含由无机材料制成的密封材料的发光部4,用于在接收从激光元件2发射的激光束时发射荧光 ,和(iii)散热器7,用于经由与发光部分4接触的散热器7的接触表面释放在发光部分4中产生的热量,响应于发射到发光部分4上的激光束 发光部分4,发光部分4存在于基于接触表面确定并获得所需放热效率的范围内。

    Semiconductor light-emitting device and method of manufacturing the same
    24.
    发明授权
    Semiconductor light-emitting device and method of manufacturing the same 有权
    半导体发光装置及其制造方法

    公开(公告)号:US06410939B1

    公开(公告)日:2002-06-25

    申请号:US09976390

    申请日:2001-10-12

    CPC classification number: H01L33/32 H01L33/007

    Abstract: The present invention provides a semiconductor light-emitting device including a Si substrate, a first clad layer, and an intermediate layer of n-AlInN between the substrate and the first clad layer. The intermediate layer is formed of AlxGayInzN, wherein x+y+z=1, 0≦y≦0.5, and 5/95≦z/x≦40/60. Thus on the Si substrate there can be provided a nitride-based, light emitting semiconductor device of high quality capable of electrical conduction from the Si substrate.

    Abstract translation: 本发明提供一种半导体发光器件,其包括在衬底和第一覆盖层之间的Si衬底,第一覆盖层和n-AlInN的中间层。 中间层由AlxGayInzN形成,其中x + y + z = 1,0

    Light emitting device
    25.
    发明授权
    Light emitting device 有权
    发光装置

    公开(公告)号:US08979314B2

    公开(公告)日:2015-03-17

    申请号:US13538403

    申请日:2012-06-29

    Abstract: In a light emitting device (10) includes a light source (11) which emits near-ultraviolet laser light and a fluorescent member (12) which includes a fluorescent body (13) that is excited by the light emitted from the light source (11) so as to emit light, the fluorescent member (12) includes a substrate (16) which is formed with a highly heat conductive member and a fluorescent body layer (14) in which particles (13d) of the fluorescent body (13) are deposited on the substrate (16).

    Abstract translation: 在发光装置(10)中,包括发射近紫外激光的光源(11)和包含荧光体(13)的荧光体(13),荧光体(13)被从光源(11 )发光,荧光体(12)包括形成有高导热部件的基板(16)和荧光体(13)的粒子(13d)为荧光体层(14)的荧光体层 沉积在基底(16)上。

    Nitride semiconductor light emitting device
    29.
    发明授权
    Nitride semiconductor light emitting device 有权
    氮化物半导体发光器件

    公开(公告)号:US06686608B1

    公开(公告)日:2004-02-03

    申请号:US09656766

    申请日:2000-09-07

    CPC classification number: H01L33/32 H01L33/02 H01L33/325

    Abstract: A nitride semiconductor light emitting device of the present invention includes; a GaN substrate into which a group VII element is doped; an intermediate layer section provided on the GaN substrate; and a light emitting layer provided on the intermediate layer section. The intermediate layer section has a sufficient thickness to prevent the group VII element diffused from the GaN substrate from being detected in the light emitting layer.

    Abstract translation: 本发明的氮化物半导体发光器件包括: 掺杂有Ⅶ族元素的GaN衬底; 设置在所述GaN衬底上的中间层部分; 以及设置在中间层部分上的发光层。 中间层部分具有足够的厚度以防止在发光层中检测到来自GaN衬底的第VII族元素的扩散。

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