Abstract:
In a light emitting device (10) includes a light source (11) which emits near-ultraviolet laser light and a fluorescent member (12) which includes a fluorescent body (13) that is excited by the light emitted from the light source (11) so as to emit light, the fluorescent member (12) includes a substrate (16) which is formed with a highly heat conductive member and a fluorescent body layer (14) in which particles (13d) of the fluorescent body (13) are deposited on the substrate (16).
Abstract:
A light projection unit capable of improving light use efficiency is provided. This light projection unit includes: a fluorescent member that includes an illuminated surface to which laser light is directed, converts at least part of the laser light into fluorescent light and outputs the fluorescent light from chiefly the illuminated surface; and a reflection member that includes a first reflection surface which reflects the fluorescent light output from the fluorescent member. The illuminated surface of the fluorescent member is inclined with respect to a predetermined direction in such a way that the illuminated surface faces in a direction opposite to a light projection direction.
Abstract:
A headlamp 1 includes (i) a laser element 2 for emitting a laser beam, (ii) a light emitting section 4, including a sealing material made from an inorganic material, for emitting fluorescence upon receiving the laser beam emitted from the laser element 2, and (iii) a heat sink 7 for releasing, via a contact surface of the heat sink 7 which contact surface is in contact with the light emitting section 4, heat generated in the light emitting section 4 in response to the laser beam emitted onto the light emitting section 4, the light emitting section 4 existing within a range which is determined on the basis of the contact surface and with which desired heat releasing efficiency is obtained.
Abstract:
The present invention provides a semiconductor light-emitting device including a Si substrate, a first clad layer, and an intermediate layer of n-AlInN between the substrate and the first clad layer. The intermediate layer is formed of AlxGayInzN, wherein x+y+z=1, 0≦y≦0.5, and 5/95≦z/x≦40/60. Thus on the Si substrate there can be provided a nitride-based, light emitting semiconductor device of high quality capable of electrical conduction from the Si substrate.
Abstract translation:本发明提供一种半导体发光器件,其包括在衬底和第一覆盖层之间的Si衬底,第一覆盖层和n-AlInN的中间层。 中间层由AlxGayInzN形成,其中x + y + z = 1,0
Abstract:
In a light emitting device (10) includes a light source (11) which emits near-ultraviolet laser light and a fluorescent member (12) which includes a fluorescent body (13) that is excited by the light emitted from the light source (11) so as to emit light, the fluorescent member (12) includes a substrate (16) which is formed with a highly heat conductive member and a fluorescent body layer (14) in which particles (13d) of the fluorescent body (13) are deposited on the substrate (16).
Abstract:
A headlamp of an embodiment of this invention includes a laser element, a light emitting section, and a parabolic mirror. A part of the parabolic mirror is provided so as to face an upper surface of the light emitting section, which upper surface has a larger area than that of a side surface of the light emitting section. The light emitting section emits fluorescence in such a manner that distribution of the fluorescence corresponds to the Lambertian distribution.
Abstract:
A light emitting device of the present invention includes a light-emitting section for generating fluorescence by receiving a laser beam, and a light irradiation unit for irradiating a light irradiated surface of the light emitting section with a laser beam that increases regularly in beam diameter in a direction in which the laser beam travels.
Abstract:
A light emitting apparatus includes: a laser element which emits laser light; a light emitting section which generates fluorescence in response to the laser light emitted from the laser element; a parabolic mirror which reflects the fluorescence generated by the light emitting section; and a multilayer filter which transmits the laser light and reflects the fluorescence, the laser element being provided outside the parabolic mirror, the parabolic mirror being provided with a window part through which the laser light passes, and the multilayer filter being provided so as to cover the window part.
Abstract:
A nitride semiconductor light emitting device of the present invention includes; a GaN substrate into which a group VII element is doped; an intermediate layer section provided on the GaN substrate; and a light emitting layer provided on the intermediate layer section. The intermediate layer section has a sufficient thickness to prevent the group VII element diffused from the GaN substrate from being detected in the light emitting layer.
Abstract:
An audio tape cassette having a magnetic tape which is wound around a hub, a cassette shell and guiding parts which comprises a polypropylene resin including inorganic particles "A" dispersed in the tape cassette, wherein the magnetic tape has a back coating layer containing a polyester resin and inorganic particles "B" which have a hardness of not larger than that of the inorganic particles "A", and the magnetic tape has a CP value which is not larger than 1000 .mu.m.