摘要:
A magnetic sensor includes magnetoresistive elements and a soft magnetic body. The magnetoresistive elements have multi layers including a magnetic layer and a nonmagnetic layer on a substrate, and exert a magnetoresistance effect. The soft magnetic body is electrically disconnected with the magnetoresistive elements, and converts a vertical magnetic field component from the outside into a magnetic field component in a horizontal direction so as to provide the magnetoresistive elements with the horizontally converted magnetic field component. The magnetoresistive elements have a pinned magnetic layer having a fixed magnetization direction and a free magnetic layer having a variable magnetization direction. The free magnetic layer is stacked on the pinned magnetic layer with a nonmagnetic layer interposed between the free magnetic layer and the pinned magnetic layer. The magnetization directions of the pinned magnetic layers of the magnetoresistive elements are the same direction. The magnetoresistive elements form a bridge circuit.
摘要:
First magnetoresistive effect elements and second magnetoresistive effect elements and are formed on the same substrate. A pinned magnetic layer of each of the first magnetoresistive effect elements has a three-layer laminated ferrimagnetic structure including magnetic layers. A pinned magnetic layer of each of the second magnetoresistive effect elements has a two-layer laminated ferrimagnetic structure including magnetic layers. The magnetization direction of the third magnetic layer of each of the magnetoresistive effect elements is antiparallel to the magnetization direction of the second magnetic layer of each of the second magnetoresistive effect elements.
摘要:
A magnetic detection device includes a sensor unit including a sensor pattern having a plurality of magnetoresistance effect films whose ends in the length direction thereof are coupled via return portions, and electrode units formed at both ends of the sensor pattern in the longitudinal direction thereof. A non-magnetic conductor is electrically connected across a top surface of one of a pair of magnetoresistance effect films that are coupled via the corresponding one of the return portions and that face each other and a top surface of the other magnetoresistance effect film. Therefore, the resistance value between the electrode units can be adjusted without increasing the dimensions of the sensor unit, and deterioration or variation in magnetic characteristics can be reduced.
摘要:
An integrated circuit is provided with two output terminals and a mode switch circuit which includes a pair of switch terminals. The mode switch circuit is allowed to switch the output mode between the 1-output mode for outputting the (+) magnetic field detection signal and the (−) magnetic field detection signal from the output terminal, and the 2-output mode for outputting the (+) magnetic field signal from the output terminal as one of the output terminals, and the (−) magnetic field detection signal from the output terminal as the other output terminal in accordance with the shortcircuit state or the non-shortcircuit state between the switch terminals. The switch terminals are exposed on the surface of the device, and the shortcircuit state and the non-shortcircuit state may be externally adjusted.
摘要:
A magnetic detecting device includes a first and a second magnetoresistive element, and a first and a second fixed resistor connected in series to the first and the second magnetoresistive element, respectively. The first and the second magnetoresistive element each include a pinned magnetic layer and a free magnetic layer with a nonmagnetic conductive layer in between. The first and the second magnetoresistive element have the same layer structure except that the nonmagnetic conductive layers have different thicknesses. The thicknesses of the nonmagnetic conductive layers are set so that a positive interlayer coupling magnetic field acts between the free magnetic layer and the pinned magnetic layer of the first magnetoresistive element and a negative interlayer coupling magnetic field acts between the free magnetic layer and the pinned magnetic layer of the second magnetoresistive element. The first and the second fixed resistor have the same layer structure.
摘要:
In a magnetic chip package including a metal thin film, which is constituted of a metal material containing a magnetic body and is disposed on a surface of a plastic substrate opposite to the side a sensor chip is fixed, a demagnetizing field is generated in the metal thin film in a direction orthogonal to the direction of a magnetic field detected by a magnetic sensor. Specifically, the metal thin film is formed of plural metal thin sub-films, each metal thin sub-film having a rectangular shape with a length orthogonal to the direction of the magnetic field detected by the magnetic sensor larger than a width parallel to the direction of the magnetic field, and each metal thin sub-films are aligned at predetermined intervals in a direction parallel to the direction of the detected magnetic field.
摘要:
In a magnetic detection device using a magnetic resistance element, the resistance of a layer having a multi-layer structure can be easily adjusted without causing damages to the layer. A magneto-resistance layer is connected in series to a reference resistance layer, and a magneto-resistance layer is connected in series to a reference resistance layer on a substrate. A voltage is applied between a power supply layer and a grounding layer. A first output conductive layer and the reference resistance layer extend in parallel to each other so that they are partially electrically connected to each other via a connection layer. A second output conductive layer and the reference resistance layer extend in parallel to each other so that they are partially electrically connected to each other via a connection layer. Accordingly, it is possible to adjust the resistance of the reference resistance layers by selecting the respective positions of the connection layers.