公开(公告)号：US08867024B2

公开(公告)日：2014-10-21

申请号：US13324092

申请日：2011-12-13

申请人： Kafai Lai ,  Dirk Pfeiffer ,  Alan Rosenbluth

发明人： Kafai Lai ,  Dirk Pfeiffer ,  Alan Rosenbluth

IPC分类号： G03F7/20

CPC分类号： G03F7/70216

摘要： A system for exposing a resist layer to an image that includes a layer reflective to imaging tool radiation and a resist layer having a region of photosensitivity over the reflective layer. An imaging tool projects radiation containing an aerial image onto the resist layer, with a portion of the radiation containing the aerial image passing through the resist and reflecting back to the resist to form an interference pattern of the projected aerial image through the resist layer thickness. The thickness and location of the resist layer region of photosensitivity are selected to include from within the interference pattern higher contrast portions of the interference pattern in the direction of the resist thickness, and to exclude lower contrast portions of the interference pattern in the resist thickness direction from said resist layer region of photosensitivity, to improve contrast of the aerial image in said resist layer region of photosensitivity.

摘要翻译： 一种用于将抗蚀剂层暴露于包括反射成像工具辐射的层的图像和在反射层上具有光敏区域的抗蚀剂层的系统。 成像工具将包含空间图像的辐射投射到抗蚀剂层上，其中包含空间图像的辐射的一部分穿过抗蚀剂并反射回抗蚀剂，以形成通过抗蚀剂层厚度的投影空间图像的干涉图案。 光敏层的抗蚀剂层区域的厚度和位置被选择为在干涉图形之中包括在抗蚀剂厚度方向上的干涉图案的较高对比度部分，并且排除抗蚀剂厚度方向上的干涉图案的较低对比度部分 从所述抗蚀剂层区域的光敏性，改善所述抗蚀剂层区域中的空间像的光敏性的对比度。

公开(公告)号：US20080037858A1

公开(公告)日：2008-02-14

申请号：US11874281

申请日：2007-10-18

申请人： Gregg Gallatin ,  Emanuel Gofman ,  Kafai Lai ,  Mark Lavin ,  Maharaj Mukherjee ,  Dov Ramm ,  Alan Rosenbluth ,  Shlomo Shlafman

发明人： Gregg Gallatin ,  Emanuel Gofman ,  Kafai Lai ,  Mark Lavin ,  Maharaj Mukherjee ,  Dov Ramm ,  Alan Rosenbluth ,  Shlomo Shlafman

IPC分类号： G06K9/00

CPC分类号： G03F1/36

摘要： Methods, and program storage devices, for performing model-based optical proximity correction by providing a region of interest (ROI) having an interaction distance and locating at least one polygon within the ROI. A cut line of sample points representative of a set of vertices, or plurality of cut lines, are generated within the ROI across at least one lateral edge of the polygon(s). An angular position, and first and second portions of the cut line residing on opposing sides of an intersection between the cut line and the lateral edge of the polygon are determined, followed by generating a new ROI by extending the original ROI beyond its interaction distance based on such angular position, and first and second portions of the cut line. In this manner, a variety of new ROIs may be generated, in a variety of different directions, to ultimately correct for optical proximity.

摘要翻译： 方法和程序存储设备，用于通过提供具有交互距离的感兴趣区域（ROI）和定位ROI内的至少一个多边形来执行基于模型的光学邻近度校正。 在多边形的至少一个侧边缘上，在ROI内产生代表一组顶点或多个切割线的采样点的切割线。 确定角位置，并且切割线的位于切割线和多边形的侧边缘之间的交叉点的相对侧上的切割线的第一和第二部分，然后通过将原始ROI延伸超过其相互作用距离来生成新的ROI 在这种角度位置上，以及切割线的第一和第二部分。 以这种方式，可以在各种不同的方向上产生各种新的ROI，以最终校正光学邻近度。

公开(公告)号：US20060041851A1

公开(公告)日：2006-02-23

申请号：US11242723

申请日：2005-10-03

申请人： Gregg Gallatin ,  Emanuel Gofman ,  Kafai Lai ,  Mark Lavin ,  Maharaj Mukherjee ,  Dov Ramm ,  Alan Rosenbluth ,  Shlomo Shlafman

发明人： Gregg Gallatin ,  Emanuel Gofman ,  Kafai Lai ,  Mark Lavin ,  Maharaj Mukherjee ,  Dov Ramm ,  Alan Rosenbluth ,  Shlomo Shlafman

IPC分类号： G06F17/50

CPC分类号： G03F1/36 ,  G03F1/68 ,  G06F17/5068

摘要： Methods, and program storage devices, for performing model-based optical lithography corrections by partitioning a cell array layout, having a plurality of polygons thereon, into a plurality of cells covering the layout. This layout is representative of a desired design data hierarchy. A density map is then generated corresponding to interactions between the polygons and plurality of cells, and then the densities within each cell are convolved. An interaction map is formed using the convolved densities, followed by truncating the interaction map to form a map of truncated cells. Substantially identical groupings of the truncated cells are then segregated respectively into differing ones of a plurality of buckets, whereby each of these buckets comprise a single set of identical groupings of truncated cells. A hierarchal arrangement is generated using these buckets, and the desired design data hierarchy enforced using the hierarchal arrangement to ultimately correct for optical lithography.

公开(公告)号：US20050091014A1

公开(公告)日：2005-04-28

申请号：US10694473

申请日：2003-10-27

申请人： Gregg Gallatin ,  Emanuel Gofman ,  Kafai Lai ,  Mark Lavin ,  Maharaj Mukherjee ,  Dov Ramm ,  Alan Rosenbluth ,  Shlomo Shlafman

发明人： Gregg Gallatin ,  Emanuel Gofman ,  Kafai Lai ,  Mark Lavin ,  Maharaj Mukherjee ,  Dov Ramm ,  Alan Rosenbluth ,  Shlomo Shlafman

IPC分类号： G03F1/08 ,  G03F1/14 ,  G03F7/20 ,  G06F17/10 ,  G06F17/50 ,  H01L21/00 ,  H01L21/027

CPC分类号： G03F1/36

摘要： Methods, and a program storage device for executing such methods, for performing model-based optical proximity correction by providing a mask matrix having a region of interest (ROI) and locating a plurality of points of interest within the mask matrix. A first polygon having a number of vertices representative of the located points of interest is computed, followed by determining a spatial relation between its vertices and the ROI. The vertices of the first polygon are then pinned to boundaries of and within the ROI such that a second polygon is formed on the ROI. The process is repeated for all vertices of the first polygon such that the second polygon is collapsed onto the ROI. This collapsed second polygon is then used to correct for optical proximity.

摘要翻译： 方法和用于执行这种方法的程序存储装置，用于通过提供具有感兴趣区域（ROI）的掩模矩阵并且在掩模矩阵内定位多个感兴趣点来执行基于模型的光学邻近校正。 计算具有代表所述定位的兴趣点的顶点数的第一多边形，然后确定其顶点和ROI之间的空间关系。 然后将第一多边形的顶点固定在ROI的边界和内部，使得在ROI上形成第二多边形。 对第一多边形的所有顶点重复该过程，使得第二多边形折叠到ROI上。 然后使用这个折叠的第二个多边形来校正光学接近度。