DYNAMIC RANDOM ACCESS MEMORY DEVICE WITH LONG RETENTION AND OPERATING METHOD THEREOF

    公开(公告)号:US20220270660A1

    公开(公告)日:2022-08-25

    申请号:US17674301

    申请日:2022-02-17

    Abstract: Disclosed are a DRAM device capable of storing charges for a long time and an operating method thereof. According to an embodiment, a DRAM device includes a channel region formed on a substrate, a gate insulating film region formed on the channel region, a floating gate region formed on the gate insulating film region, a transition layer region formed on the floating gate region, and a control gate region formed on the transition layer region and generating a potential difference with the floating gate region in response to a fact that a potential that is not less than a reference potential is applied and releasing at least one charge stored in the floating gate region or storing the at least one charge into the floating gate region, by generating a transition current due to the potential difference.

    Security system and method thereof using both KMS and HSM

    公开(公告)号:US11411719B2

    公开(公告)日:2022-08-09

    申请号:US16985266

    申请日:2020-08-05

    Abstract: The present disclosure in some embodiments provides a security system using both key management service (KMS) and a hardware security module (HSM), and a method of operating the security system. At least one embodiment provides a security system including an HSM, a bootstrapping enclave, and one or more KMS enclaves. The HSM is configured to generate, replace or remove a root key, the HSM being physically independent. The bootstrapping enclave is configured to receive the root key from the HSM. The one or more KMSs are configured to perform an attestation procedure with the bootstrapping enclave, to receive the root key from the bootstrapping enclave, and to utilize the root key for establishing a secure channel with the HSM.

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