公开(公告)号：US06944008B2

公开(公告)日：2005-09-13

申请号：US10323522

申请日：2002-12-18

Applicant: Susanne Arney ,  Arman Gasparyan ,  Sungho Jin ,  Omar D. López ,  Herbert R. Shea

Inventor： Susanne Arney ,  Arman Gasparyan ,  Sungho Jin ,  Omar D. López ,  Herbert R. Shea

IPC: G02B26/08 ,  H01G4/06 ,  H01G4/35 ,  H01G5/019 ,  H01G5/16 ,  H01G7/06 ,  H01L21/00

CPC classification number: H01G5/16 ,  B81B3/0086 ,  G02B26/0841 ,  H01G5/019

Abstract: A charge-dissipation structure is formed within the dielectric of an electrostatically driven device, such as a micro-electro-mechanical systems (“MEMS”) device, by ion implantation. Electrical and other properties of the charge-dissipation structure may be controlled by selection of the species, energy, and dose of implanted ions. With appropriate properties, such a charge-dissipation structure can reduce the effect on device operation of mobile charges in or on the dielectric.

Abstract translation: 通过离子注入在静电驱动装置（例如微机电系统（MEMS））装置的电介质内形成电荷消散结构。 可以通过选择植入离子的种类，能量和剂量来控制电荷和电荷耗散结构的其它性质。 具有适当的特性，这种电荷耗散结构可以减少电介质中或电介质上的移动电荷对器件操作的影响。

公开(公告)号：US20050196891A1

公开(公告)日：2005-09-08

申请号：US11113782

申请日：2005-04-25

Applicant: Susanne Arney ,  Arman Gasparyan ,  Sungho Jin ,  Omar Lopez ,  Herbert Shea

Inventor： Susanne Arney ,  Arman Gasparyan ,  Sungho Jin ,  Omar Lopez ,  Herbert Shea

IPC: G02B26/08 ,  H01G4/06 ,  H01G4/35 ,  H01G5/019 ,  H01G5/16 ,  H01G7/06 ,  H01L21/00

CPC classification number: H01G5/16 ,  B81B3/0086 ,  G02B26/0841 ,  H01G5/019

Abstract: In one embodiment, an electrode is disposed on a surface of a first portion of the dielectric, with the first portion and the electrode forming an electrode region of the device. A charge-dissipation structure is then formed by implanting ions into the electrode region and a second portion of the dielectric located outside of the electrode region. In another embodiment, a charge-dissipation structure is formed by implanting ions into the dielectric of a movable part of an electromechanical system. Advantageously, ion implantation can be performed without masking, lithography, or elevated temperatures; the electrical properties of the resulting charge dissipation structure can be controlled relatively easily; and portions of the charge dissipation structure are protected from oxidation and/or corrosion by the dielectric material.

Abstract translation: 在一个实施例中，电极设置在电介质的第一部分的表面上，其中第一部分和电极形成器件的电极区域。 然后通过将离子注入电极区域和位于电极区域外部的电介质的第二部分来形成电荷耗散结构。 在另一个实施例中，通过将离子注入到机电系统的可移动部分的电介质中来形成电荷 - 耗散结构。 有利地，可以进行离子注入而不进行掩蔽，光刻或升高的温度; 可以相对容易地控制所得电荷耗散结构的电性能; 并且电荷耗散结构的部分被电介质材料保护免受氧化和/或腐蚀。

公开(公告)号：US20050079282A1

公开(公告)日：2005-04-14

申请号：US10969273

申请日：2004-10-20

Applicant: Sungho Jin

Inventor： Sungho Jin

IPC: G11B5/64 ,  G11B5/84 ,  G11B5/855 ,  B05D5/12

CPC classification number: G11B5/642 ,  B82Y10/00 ,  G11B5/84 ,  G11B5/855 ,  G11C2213/81

Abstract: In accordance with the invention, a high density recording medium is fabricated by novel methods. The medium comprises an array of nanomagnets disposed within a matrix or on the surface of substrate material. The nanomagnets are advantageously substantially perpendicular to a planar surface. The nanomagnets are preferably nanowires of high coercivity magnetic material inside a porous matrix or an array of vertically aligned nanotubes, or on the surface of flat substrate. Such media can provide ultra-high density recording with bit size less than 50 nm and even less than 20 nm. A variety of techniques are described for making such media.

Abstract translation: 根据本发明，通过新颖的方法制造高密度记录介质。 介质包括设置在基体内或基底材料表面上的纳米磁体阵列。 纳米磁体有利地基本上垂直于平坦表面。 纳米磁体优选在多孔基体内的高矫顽力磁性材料的纳米线或垂直排列的纳米管的阵列，或平坦基底的表面上。 这种介质可以提供比特尺寸小于50nm甚至小于20nm的超高密度记录。 描述了制作这种介质的各种技术。

公开(公告)号：US06869007B2

公开(公告)日：2005-03-22

申请号：US10046836

申请日：2002-01-15

Applicant: Sungho Jin ,  Hareesh Mavoori ,  Ainissa G Ramirez

Inventor： Sungho Jin ,  Hareesh Mavoori ,  Ainissa G Ramirez

IPC: B23K35/02 ,  B23K35/14 ,  B32B15/01 ,  H01L21/461

CPC classification number: B32B15/01 ,  B23K35/0238 ,  Y10T428/12458

Abstract: A method for fabricating a reactive solder or braze includes forming a metallic matrix with an interior region and surface regions by actively providing a higher concentration of reactive atoms to the interior region than to the surface regions.

Abstract translation: 用于制造反应性焊料或钎焊的方法包括通过主动地向内部区域提供比表面区域更高浓度的反应性原子来形成具有内部区域和表面区域的金属基体。

公开(公告)号：US06809465B2

公开(公告)日：2004-10-26

申请号：US10350614

申请日：2003-01-24

Applicant: Sungho Jin

Inventor： Sungho Jin

IPC: H01J102

CPC classification number: B82Y10/00 ,  H01J3/028 ,  H01J35/065 ,  H01J2201/30 ,  H01J2329/00 ,  Y10S977/939

Abstract: In accordance with the invention, an electron beam source for exposing selected portions of a surface to electrons comprises a plurality of nanoscale electron emitters and, associated with each electron emitter, a directional control element to direct the emitter toward a selected portion of the surface. In a preferred embodiment, the emitters are nanotubes or nanowires mounted on electrostatically controlled MEMS directional control elements. An alternative embodiment uses electrode directional control elements.

Abstract translation: 根据本发明，用于将表面的选定部分暴露于电子的电子束源包括多个纳米级电子发射器，并且与每个电子发射器相关联，定向控制元件将发射极引向表面的选定部分。 在优选实施例中，发射器是安装在静电控制MEMS方向控制元件上的纳米管或纳米线。 替代实施例使用电极方向控制元件。

公开(公告)号：US06704475B2

公开(公告)日：2004-03-09

申请号：US09825005

申请日：2001-04-03

Applicant: Sungho Jin ,  Hareesh Mavoori ,  Roland Ryf

Inventor： Sungho Jin ,  Hareesh Mavoori ,  Roland Ryf

IPC: G02B635

CPC classification number: G02B6/352 ,  G02B6/3556 ,  G02B6/356 ,  G02B6/3576 ,  G02B6/358 ,  G02B6/3582 ,  G02B6/3594

Abstract: A mirror, or an array of mirrors, for use in a micro-electro-mechanical system (MEMS) optical device. The mirror includes a mirror substrate having a loss-reducing layer located over a first or second side thereof, and a light reflective optical layer located over the loss-reducing layer. The inventive mirror reduces undesirable Fabry-Perot interferrometric optical loss through minimizing the extent of multiple reflections within the MEMS mirror substrate.

Abstract translation: 用于微电子机械系统（MEMS）光学装置的反射镜或反射镜阵列。 反射镜包括具有位于其第一或第二侧上的损耗减小层的反射镜基板和位于损耗减少层上方的光反射光学层。 本发明的镜子通过最小化MEMS镜衬底内的多次反射的程度来减少不期望的法布里 - 珀罗干涉光学损耗。

公开(公告)号：US06522801B1

公开(公告)日：2003-02-18

申请号：US09685883

申请日：2000-10-10

Applicant: Vladimir A. Aksyuk ,  Sungho Jin ,  Jungsang Kim ,  Hareesh Mavoori ,  Flavio Pardo ,  Ainissa Ramirez

Inventor： Vladimir A. Aksyuk ,  Sungho Jin ,  Jungsang Kim ,  Hareesh Mavoori ,  Flavio Pardo ,  Ainissa Ramirez

IPC: G02B642

CPC classification number: G02B26/0841 ,  B81B2201/042 ,  B81B2203/0127 ,  B81C1/00666 ,  B81C2201/0164 ,  G02B6/122 ,  G02B6/266 ,  G02B2006/12104

Abstract: The present invention provides a micro-electro-mechanical system (MEMS) optical device. The micro-electro-mechanical system (MEMS) optical device includes a mirror having a substrate with an implanted light reflective optical layer thereover, and a mounting substrate on which the mirror is movably mounted. The inclusion of the dopant within the light reflective optical layer increases the tensile stress of the device and tends to correct the concave curvature of the mirror structure toward a desirably flat configuration.

Abstract translation: 本发明提供一种微电子机械系统（MEMS）光学装置。 微电子机械系统（MEMS）光学器件包括具有其上具有注入光反射光学层的衬底的反射镜，以及安装衬底，反射镜可移动地安装在该安装衬底上。 掺杂剂在光反射光学层中的包含增加了器件的拉伸应力，并且倾向于将反射镜结构的凹曲线朝向期望的平坦构型进行校正。

公开(公告)号：US06442307B1

公开(公告)日：2002-08-27

申请号：US09705350

申请日：2000-11-03

Applicant: Dustin W. Carr ,  Dennis S. Greywall ,  Sungho Jin ,  Flavio Pardo ,  Hyongsok Soh

Inventor： Dustin W. Carr ,  Dennis S. Greywall ,  Sungho Jin ,  Flavio Pardo ,  Hyongsok Soh

IPC: G02B626

CPC classification number: G02B6/3584 ,  B81B2201/042 ,  B81C3/002 ,  B81C2203/035 ,  G02B6/266 ,  G02B6/3518 ,  G02B6/3556 ,  G02B6/356 ,  G02B6/357 ,  G02B6/3594 ,  G02B26/0841 ,  G02B2006/12104

Abstract: In accordance with the invention, a MEMs mirror device comprises a mirror layer including a frame structure and at least one mirror movably coupled to the frame and an actuator layer including at least one conductive path and at least one electrode for moving the mirror. The mirror layer and the actuator layer are provided with metallization pads and are bonded together in lateral alignment and with predetermined vertical gap spacing by solder bonds between the pads. The device has utility in optical cross connection, variable attenuation and power gain equalization.

Abstract translation: 根据本发明，MEM镜反射镜装置包括镜面层，该镜层包括框架结构和至少一个可移动地联接到框架的镜子，以及包括至少一个导电路径和至少一个用于移动镜子的电极的致动器层。 镜层和致动器层设置有金属化焊盘，并且通过焊盘之间的焊接接合以横向对准并且具有预定的垂直间隙间隔结合在一起。 该器件具有光交叉连接，可变衰减和功率增益均衡功能。

公开(公告)号：US06306516B1

公开(公告)日：2001-10-23

申请号：US09466449

申请日：1999-12-17

Applicant: Sungho Jin ,  Hareesh Mavoori ,  Ainissa G Ramirez

Inventor： Sungho Jin ,  Hareesh Mavoori ,  Ainissa G Ramirez

IPC: B32B1504

CPC classification number: B23K35/262 ,  B23K35/3006 ,  B23K35/3013 ,  G02B6/022 ,  G02B6/4238 ,  Y10S228/903

Abstract: The invention provides an article comprising a solder that bonds well to oxides and other surfaces to which solder bonding is problematic. The solder composition contains one or more rare earth elements, which react with the oxide or other surface to promote bonding, and further contains sufficient Au and/or Ag to act as carriers for the rare earths. Because rare earths have some solid solubility in Au and Ag, the problem of intermetallic formation is lessened or eliminated, and improved bonding to oxide surfaces is attained.

Abstract translation: 本发明提供了一种包含焊料的制品，该焊料很好地粘合到氧化物和焊料粘结问题的其它表面上。 焊料组合物含有一种或多种稀土元素，其与氧化物或其它表面反应以促进键合，并且还含有足够的Au和/或Ag作为稀土的载体。 由于稀土在Au和Ag中具有一定的固溶度，所以金属间形成的问题被减少或消除，并且获得了改进的与氧化物表面的接合。

公开(公告)号：US06299703B1

公开(公告)日：2001-10-09

申请号：US09500855

申请日：2000-02-09

Applicant: Li-Han Chen ,  Sungho Jin ,  Timothy J. Klemmer ,  Hareesh Mavoori

Inventor： Li-Han Chen ,  Sungho Jin ,  Timothy J. Klemmer ,  Hareesh Mavoori

IPC: H01F1147

CPC classification number: H01F1/0306 ,  C22C19/07 ,  G02B6/022 ,  H01L41/20

Abstract: An article comprising an alloy exhibiting high magnetostriction in relatively low applied magnetic fields is provided, the alloy capable of being formed in a relatively easy manner and having desirable physical properties. The Co—Fe alloy of the invention exhibits a magnetostriction of at least 100×10−6 in a magnetic field less than 400 Oe, advantageously in a magnetic field less than 100 Oe. The alloy is formed by plastically deforming the alloy, e.g., by cold rolling, to a reduction in cross-sectional area of at least 50%, and then heat treating the alloy to induce recrystallization. This combination of plastic deformation and recrystallization was found to provide desirable grain growth and microstructure. The resultant alloy is useful in a variety of device components, including transducers, frequency filters, signal delay lines, and optical fiber grating devices.

Abstract translation: 提供了一种在相对低的施加磁场中包含具有高磁致伸缩性的合金的制品，该合金能够以相对容易的方式形成并且具有期望的物理性能。 本发明的Co-Fe合金在小于400Oe的磁场中表现出至少100×10 -6的磁致伸缩，有利地在小于100Oe的磁场中。 该合金通过例如冷轧使合金发生塑性变形，形成至少为50％的横截面积的减少，然后对该合金进行热处理以引发再结晶。 发现塑性变形和重结晶的组合提供了理想的晶粒生长和微结构。 所得合金可用于各种器件部件，包括换能器，频率滤波器，信号延迟线和光纤光栅器件。