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公开(公告)号：US20230082796A1
公开(公告)日：2023-03-16
申请号：US17900655
申请日：2022-08-31
Applicant: Samsung SDI Co., Ltd.
Inventor： Dookyun Lee , Byungwuk Kang , Sungsoo Kim , Saehwan Kim , Soohyeon Kim , Yongchan You , Jangwook Lee , Minah Cha , Seungyeon Choi
Abstract: Provided are a cathode active material for a lithium secondary battery, a method of preparing the same, and a lithium secondary battery containing a cathode including the cathode active material, in which the cathode active material includes nickel-based lithium metal oxide containing single-crystal particles, and a particle size of the single-crystal particles is about 1 μm to about 8 μm, and a particle size distribution of the single-crystal particles expressed by (D90-D10)/D50 is 1.4 or less.
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12.发明申请公开(公告)号：US20220325433A1
公开(公告)日：2022-10-13
申请号：US17621161
申请日：2020-04-22
Applicant: Khalifa University of Science and Technology
Inventor： Tiejun ZHANG , Hongxia LI , Aikifa RAZA
Abstract: Methods of preparing a mineral-coated rock micromodel can include 3D-printing a transparent porous micromodel with photo-curable polymer, seeding a thin layer of mineral nanoparticles in the network of pores inside the micromodel, and subsequently growing a mineral layer on the thin layer of mineral nanoparticles. The thin layer of mineral nanoparticles can be introduced by injecting a suspension containing the mineral nanoparticles through the microporous polymer micromodel, and the mineral layer can be grown in-situ on the thin layer of mineral nanoparticles in the network of pores by injecting an ion-rich solution configured to crystallize from solution in response to contacting the mineral nanoparticles.
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公开(公告)号：US20220228288A1
公开(公告)日：2022-07-21
申请号：US17577797
申请日：2022-01-18
Applicant: 6K Inc.
Inventor： RICHARD K. HOLMAN , ADRIAN PULLEN , GREGORY M. WROBEL , JOHN COLWELL
Abstract: Disclosed herein are systems and methods for synthesis of submicron-scale or micron-scale single crystal cathode (SCC) material, such as NMC, using a feedstock and microwave plasma processing. Microwave plasma processing of these SCC materials provides a low cost, scalable approach. In some embodiments, advanced SCC materials may be synthesized through microwave plasma processing of feedstock materials, wherein the SCC materials may comprise at least 80% nickel. In some embodiments, the microwave plasma processing may enable synthesis of SCC materials with very short calcination.
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公开(公告)号：US11352690B2
公开(公告)日：2022-06-07
申请号：US17113653
申请日：2020-12-07
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei Yamazaki , Junichi Koezuka , Kenichi Okazaki , Masashi Tsubuku
Abstract: A metal oxide film containing a crystal part is provided. Alternatively, a metal oxide film with highly stable physical properties is provided. Alternatively, a metal oxide film with improved electrical characteristics is provided. Alternatively, a metal oxide film with which field-effect mobility can be increased is provided.
A metal oxide film including In, M (M is Al, Ga, Y, or Sn), and Zn includes a first crystal part and a second crystal part; the first crystal part has c-axis alignment; the second crystal part has no c-axis alignment; and the existing proportion of the second crystal part is higher than the existing proportion of the first crystal part.-
公开(公告)号：US11346017B1
公开(公告)日：2022-05-31
申请号：US16549309
申请日：2019-08-23
Inventor： James M. Mann , Thomas A. Bowen , Eric J. Plummer
Abstract: The present invention relates to single crystalline NaUO3, hydrothermal growth processes of making such single crystals and methods of using such single crystals. In particular, Applicants disclose single crystalline NaUO3 in the R32 space group. Unlike other powdered NaUO3, Applicants' single crystalline NaUO3 has a sufficient crystal size to be characterized and used in the fields of laser light, infrared countermeasures, nuclear fuel material, nuclear forensics and magnetic applications.
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Patent Agency Ranking
公开(公告)号：US20220119984A1
公开(公告)日：2022-04-21
申请号：US17563853
申请日：2021-12-28
Inventor： YOSHIO OKAYAMA
Abstract: A method for producing a Group III nitride crystal including preparing an RAMgO4 substrate containing a single crystal represented by the general formula RAMgO4 (wherein R represents one or a plurality of trivalent elements selected from the group consisting of Sc, In, Y, and a lanthanoid element, and A represents one or a plurality of trivalent elements selected from the group consisting of Fe(III), Ga, and Al); and growing a Group III nitride crystal containing Mg on the RAMgO4 substrate.
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公开(公告)号：US11254868B2
公开(公告)日：2022-02-22
申请号：US17204769
申请日：2021-03-17
Applicant: MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
Inventor： Yu Wang , Weiming Guan , Min Li
Abstract: The present disclosure discloses a method for growing a crystal with a short decay time. According to the method, a new single crystal furnace and a temperature field device are adapted and a process, a ration of reactants, and growth parameters are adjusted and/or optimized, accordingly, a crystal with a short decay time, a high luminous intensity, and a high luminous efficiency can be grown without a co-doping operation.
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公开(公告)号：US11248310B2
公开(公告)日：2022-02-15
申请号：US15429167
申请日：2017-02-10
Inventor： Yoshio Okayama
Abstract: A Group III nitride substrate contains a base material part of a Group III nitride having a front surface and a back surface, the front surface of the base material part and the back surface of the base material part having different Mg concentrations from each other.
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公开(公告)号：US11242485B2
公开(公告)日：2022-02-08
申请号：US17186188
申请日：2021-02-26
Applicant: MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
Inventor： Yu Wang , Weiming Guan , Min Li
Abstract: The present disclosure discloses a method for growing a crystal with a short decay time. According to the method, a new single crystal furnace and a temperature field device are adapted and a process, a ration of reactants, and growth parameters are adjusted and/or optimized, accordingly, a crystal with a short decay time, a high luminous intensity, and a high luminous efficiency can be grown without a co-doping operation.
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20.发明申请公开(公告)号：US20220020586A1
公开(公告)日：2022-01-20
申请号：US17491637
申请日：2021-10-01
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Masashi TSUBUKU , Masashi OOTA , Yoichi KUROSAWA , Noritaka ISHIHARA
IPC: H01L21/02 , C23C14/08 , C01G15/00 , B82Y30/00 , C23C14/34 , C30B23/08 , C30B29/22 , H01J37/34 , C30B1/04 , C30B28/02 , C30B29/68 , H01L29/04 , H01L29/24 , H01L29/66 , H01L29/786
Abstract: A method for manufacturing a sputtering target with which an oxide semiconductor film with a small amount of defects can be formed is provided. Alternatively, an oxide semiconductor film with a small amount of defects is formed. A method for manufacturing a sputtering target is provided, which includes the steps of: forming a polycrystalline In-M-Zn oxide (M represents a metal chosen among aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium) powder by mixing, sintering, and grinding indium oxide, an oxide of the metal, and zinc oxide; forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder; forming a compact by compacting the mixture; and sintering the compact.
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