公开(公告)号：US20180122840A1

公开(公告)日：2018-05-03

申请号：US15863989

申请日：2018-01-08

Applicant: Shenzhen China Star Optoelectronics Technology Co., Ltd. ,  Wuhan China Star Optoelectronics Technology Co., Ltd.

Inventor： Cong WANG ,  Peng DU

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L27/1288 ,  H01L27/124 ,  H01L27/1248 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78678

Abstract: An LTPS array substrate includes a substrate; a gate disposed on the substrate; a first insulating layer, a polycrystalline silicon layer, and a second insulating layer sequentially disposed on the gate; a source and a drain disposed on the second insulating layer and are electrically connected to the polycrystalline silicon layer via first contact holes formed in the second insulating layer; a passivation layer disposed on the source, the drain, and the second insulating layer and including a second contact hole formed therein to expose a surface of the drain; a third insulating layer disposed on the passivation layer in such a way that the second contact hole is exposed outside the third insulating layer; and a pixel electrode disposed on the third insulation layer and electrically connected to the drain via the second contact hole.

公开(公告)号：US20170357134A1

公开(公告)日：2017-12-14

申请号：US14907915

申请日：2015-12-08

Applicant: Shenzhen China Star Optoelectronics Technology Co., Ltd. ,  Wuhan China Star Optoelectronics Technology Co., Ltd.

Inventor： Cong WANG ,  Peng DU

IPC: G02F1/1362 ,  G02F1/1368 ,  G02F1/1343 ,  H01L27/12

CPC classification number: G02F1/136227 ,  G02F1/133345 ,  G02F1/134309 ,  G02F1/136209 ,  G02F1/1368 ,  G02F2001/13685 ,  G02F2201/121 ,  G02F2201/123 ,  G02F2202/104 ,  H01L27/124 ,  H01L27/1248

Abstract: An array substrate and a liquid crystal display device comprising the array substrate are disclosed. The array substrate comprises a pixel unit having a thin film transistor region and a through-hole region. The pixel unit comprises a glass substrate, a first insulation layer, a second insulation layer, a third insulation layer, a fourth insulation layer, and a fifth insulation layer stacked from bottom up in sequence. In the thin film transistor region, the glass substrate is provided with a light-shading metal member that is covered by the first insulation layer, the first insulation layer is provided with an active layer that is covered by the second insulation layer, two ends of the active layer are respectively connected with a source and a drain formed between the third insulation layer and the fourth insulation layer, the second insulation layer is provided with a gate that is covered by the third insulation layer, and the fourth insulation layer is provided with a common electrode that is covered by the fifth insulation layer. In the through-hole region, a pixel electrode is arranged on the fifth insulation layer and a through hole is configured in the fourth insulation layer, so that the pixel electrode is connected with the source or the drain after passing through the fifth insulation layer. A cushion layer is arranged under the through hole in an insulated manner.

公开(公告)号：US20170170203A1

公开(公告)日：2017-06-15

申请号：US14779089

申请日：2015-07-31

Applicant: Shenzhen China Star Optoelectronics Technology Co., Ltd. ,  Wuhan China Star Optoelectronics Technology Co., Ltd.

Inventor： Cong WANG ,  Peng DU ,  Xiaoxiao WANG

IPC: H01L27/12 ,  G02F1/1368 ,  H01L29/786

CPC classification number: H01L27/127 ,  G02F1/1368 ,  G02F2202/104 ,  H01L27/1222 ,  H01L27/1248 ,  H01L27/1288 ,  H01L29/78621 ,  H01L29/78675

Abstract: The present invention provides a LTPS array substrate and a manufacturing method thereof. The method comprises: forming a source electrode and a drain electrode on a substrate, forming polysilicon layers of a first region and a second region on the substrate including the source electrode and the drain electrode, and the thickness of the polysilicon layer of the first region is greater than the one of the second region, the polysilicon layer of the first region partially covers the source electrode and the drain electrode; passivating the surface of the polysilicon layer in order to turn the part of the adjacent surface of the polysilicon layer of the second region and the first region into an insulating layer; forming a gate electrode on the insulating layer between the source electrode and the drain electrode. The present invention can simplify the LTPS technical process and reduce the producing costs.

公开(公告)号：US20170153380A1

公开(公告)日：2017-06-01

申请号：US14768813

申请日：2015-07-17

Applicant: Shenzhen China Star Optoelectronics Technology Co. Ltd. ,  Wuhan China Star Optoelectronics Technology Co., Ltd.

Inventor： Cong WANG ,  Peng DU

IPC: F21V8/00 ,  G02F1/1335

CPC classification number: G02B6/0065 ,  G02B6/0036 ,  G02B6/0038 ,  G02B6/0053 ,  G02B6/0091 ,  G02F1/133514 ,  G02F1/133615 ,  G02F2202/28

Abstract: The disclosure provides a liquid crystal display device and a method for manufacturing a light guiding plate thereof. Wherein, multiple first protrusions are disposed on an irradiating surface of the light guiding plate, a prism sheet of an optical film assembly is disposed adjacent with the light guiding plate, multiple of second protrusions are disposed on the prism sheet of the optical film assembly, the second protrusions and the first protrusions are alternatively arranged, and translucent adhesives are disposed between each of the first protrusions and two adjacent second protrusions, such that the prism sheet is fixed with the light guiding plate. The disclosure can improve the phenomena of Hotspot Mura when displaying and decrease the thickness of the backlight module, such that it is beneficial for the designs of narrow frame and non-frame of liquid crystal display devices.