公开(公告)号：US20230137922A1

公开(公告)日：2023-05-04

申请号：US17287169

申请日：2021-04-14

Applicant: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Fan GONG ,  Fei AI ,  Jiyue SONG

IPC: H10K59/60 ,  H10K59/80 ,  G02F1/1362

Abstract: An array substrate, a manufacturing process of an array substrate, and a display panel are disclosed. The array substrate includes a substrate and a photosensitive element. The photosensitive element is disposed on the substrate and includes a doped semiconductor layer, an intrinsic semiconductor layer, and a transparent electrode layer sequentially stacked. By improving an internal structure of the photosensitive element, light absorption by an incident interface of the intrinsic semiconductor layer can be increased, so that sensitivity of the photosensitive element is enhanced.

公开(公告)号：US20220122370A1

公开(公告)日：2022-04-21

申请号：US16956962

申请日：2020-04-02

Applicant: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Juncheng XIAO ,  Fei AI ,  Jiyue SONG

IPC: G06V40/13 ,  H01L27/146

Abstract: A photo sensor, a manufacturing method thereof, and a display panel are disclosed. By an ion implantation method forming an N-type region and a P-type region on a surface of polycrystalline silicon in a same layer respectively, compatibility with an ion implantation process is ensured, while covering a layer of an amorphous silicon photosensitive layer on the polycrystalline silicon enhances light absorption ability and can increase photo-generated electron-hole pairs. Furthermore, built-in electric fields exist on a horizontal direction and a vertical direction, which can more effectively separate the electron-hole pairs to enhance photo-generated electric current to improve accuracy of fingerprint recognition.

公开(公告)号：US20240233433A9

公开(公告)日：2024-07-11

申请号：US17769396

申请日：2022-03-10

Applicant: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Fan GONG ,  Fei AI ,  Jiyue SONG ,  Dewei SONG

IPC: G06V40/13 ,  H01L27/12 ,  H01L31/0216

CPC classification number: G06V40/1318 ,  H01L27/124 ,  H01L31/02164

Abstract: A fingerprint collection device and a display panel are provided. The fingerprint collection device includes: a base substrate, a driving circuit layer, a first passivation layer, a photodiode, a second passivation layer, and an electrode layer. A first electrode portion is electrically connected to the photodiode through a second via. A second electrode portion is electrically connected to a first signal trace and a second signal trace through a third via and a fourth via to form a bridge structure. Since the third via, the fourth via, and the second via are formed in same process, one process can be saved.

公开(公告)号：US20240135742A1

公开(公告)日：2024-04-25

申请号：US17769396

申请日：2022-03-10

Applicant: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Fan GONG ,  Fei AI ,  Jiyue SONG ,  Dewei SONG

IPC: G06V40/13 ,  H01L27/12 ,  H01L31/0216

CPC classification number: G06V40/1318 ,  H01L27/124 ,  H01L31/02164

Abstract: A fingerprint collection device and a display panel are provided. The fingerprint collection device includes: a base substrate, a driving circuit layer, a first passivation layer, a photodiode, a second passivation layer, and an electrode layer. A first electrode portion is electrically connected to the photodiode through a second via. A second electrode portion is electrically connected to a first signal trace and a second signal trace through a third via and a fourth via to form a bridge structure. Since the third via, the fourth via, and the second via are formed in same process, one process can be saved.

公开(公告)号：US20240038793A1

公开(公告)日：2024-02-01

申请号：US17278342

申请日：2020-12-31

Applicant: Wuhan China Star Optoelectronics Technology Co., Ltd.

Inventor： Fei AI ,  Fan GONG ,  Jiyue SONG ,  Dewei SONG ,  Shiyu LONG

IPC: H01L27/146

CPC classification number: H01L27/14612 ,  H01L27/14649 ,  H01L27/14683

Abstract: An array substrate and a manufacturing method thereof are provided. The array substrate includes a thin film transistor layer including a first thin film transistor and an infrared detection element disposed on a first side of the thin film transistor layer. The infrared detection element includes a first electrode, a light-absorbing layer, and a second electrode sequentially stacked, wherein the infrared detection element is electrically connected to the first thin film transistor, and wherein a material of the light-absorbing layer is microcrystalline silicon. A thickness and band gap of the microcrystalline silicon simultaneously fulfill a purpose of infrared detection.

公开(公告)号：US20230215881A1

公开(公告)日：2023-07-06

申请号：US17593659

申请日：2021-07-26

Applicant: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Fan GONG ,  Fei Al ,  Jiyue SONG

IPC: H01L27/144 ,  H01L27/12

CPC classification number: H01L27/1446 ,  H01L27/1288

Abstract: An array substrate, a manufacturing method of the array substrate, and a display panel are provided. The array substrate includes a photosensitive sensor. The photosensitive sensor includes a photosensitive module and a storage module. The photosensitive module includes a photosensitive semiconductor layer. The storage module includes a first electrode plate and a second electrode plate. Wherein, the photosensitive semiconductor layer is disposed on an extension section of a drain electrode. A number of film layer of the photosensitive sensor is decreased, and photomasks are saved.

公开(公告)号：US20230154949A1

公开(公告)日：2023-05-18

申请号：US17281268

申请日：2021-03-11

Applicant: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Fuhsiung TANG ,  Fan GONG ,  Fei AI ,  Jiyue SONG

IPC: H01L27/146 ,  G06V40/13

CPC classification number: H01L27/14612 ,  G06V40/1318 ,  H01L27/14678

Abstract: An array substrate and a display panel are provided. The array substrate includes a substrate, and a switch component and a light-sensing component adjacent to each other and disposed on the substrate. The switch component includes a first semiconductor disposed on the substrate. The light-sensing component includes a second semiconductor disposed on a same layer as the first semiconductor and a light-sensing electrode disposed on a side of the second semiconductor away from the substrate and connected to the second semiconductor. The light-sensing electrode and the second semiconductor constitute a Schottky knot.

公开(公告)号：US20220190185A1

公开(公告)日：2022-06-16

申请号：US17263943

申请日：2020-06-24

Applicant: Wuhan China Star Optoelectronics Technology Co., Ltd.

Inventor： Jianfeng YUAN ,  Fei AI ,  Jiyue SONG

IPC: H01L31/105 ,  H01L27/144 ,  H01L31/20 ,  H01L31/0336 ,  H01L51/42 ,  H01L27/30

Abstract: A positive-intrinsic-negative (PIN) photosensitive device is provided. A p-type semiconductor layer composed of molybdenum oxide and having valence band energy between valence band energy of an intrinsic semiconductor layer and an upper electrode is used to replace a p-type semiconductor layer used in a conventional PIN photodiode, so that the PIN photodiode may be prepared without using borane gas. More, a difference between valence band energy of the p-type semiconductor layer and the intrinsic semiconductor layer is used to transport holes located in a valence band, so that it is unnecessary to use an active layer of a thin film transistor, so that the PIN photosensitive device may be stacked on the thin film transistor to reduce aperture ratio loss of a display panel.