公开(公告)号：US20230068065A1

公开(公告)日：2023-03-02

申请号：US17461271

申请日：2021-08-30

Applicant: Taiwan Semiconductor Manufacturing Co.,Ltd.

Inventor： Mrunal Abhijith KHADERBAD ,  Sathaiya Mahaveer DHANYAKUMAR ,  Huicheng CHANG ,  Keng-Chu LIN ,  Winnie Victoria Wei-Ning CHEN

IPC: H01L21/822 ,  H01L21/8234 ,  H01L27/092

Abstract: A semiconductor device includes a first transistor device of a first type. The first transistor includes first nanostructures, a first pair of source/drain structures, and a first gate electrode on the first nanostructures. The semiconductor device also includes a second transistor device of a second type formed over the first transistor device. The second transistor device includes second nanostructures over the first nanostructures, a second pair of source/drain structures over the first pair or source/drain structures, and a second gate electrode on the second nanostructures and over the first nanostructures. The semiconductor device also includes a first isolation structure between the first and second nanostructures. The semiconductor device further includes a second isolation structure in contact with a top surface of the first pair of source/drain structures. The semiconductor device also includes a seed layer between the second isolation structure and the second pair of source/drain structures.

公开(公告)号：US20220139773A1

公开(公告)日：2022-05-05

申请号：US17575444

申请日：2022-01-13

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Sung-Li WANG ,  Shuen-Shin LIANG ,  Yu-Yun PENG ,  Fang-Wei LEE ,  Chia-Hung CHU ,  Mrunal Abhijith KHADERBAD ,  Keng-Chu LIN

IPC: H01L21/768 ,  H01L21/306 ,  H01L23/522 ,  H01L21/285 ,  H01L21/02 ,  H01L23/532

Abstract: An IC structure includes a transistor, a source/drain contact, a metal oxide layer, a non-metal oxide layer, a barrier structure, and a via. The transistor includes a gate structure and source/drain regions on opposite sides of the gate structure. The source/drain contact is over one of the source/drain regions. The metal oxide layer is over the source/drain contact. The non-metal oxide layer is over the metal oxide layer. The barrier structure is over the source/drain contact. The barrier structure forms a first interface with the metal oxide layer and a second interface with the non-metal oxide layer, and the second interface is laterally offset from the first interface. The via extends through the non-metal oxide layer to the barrier structure.