公开(公告)号：US20200321216A1

公开(公告)日：2020-10-08

申请号：US16907889

申请日：2020-06-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hongfa Luan ,  Yi-Fan Chen ,  Chun-Yen Peng ,  Cheng-Po Chau ,  Wen-Yu Ku ,  Huicheng Chang

IPC: H01L21/28 ,  H01L29/78 ,  H01L29/66 ,  H01L21/225 ,  H01L29/51 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/8234 ,  H01L29/08 ,  H01L29/40 ,  H01L29/423

Abstract: Embodiment described herein provide a thermal treatment process following a high-pressure anneal process to keep hydrogen at an interface between a channel region and a gate dielectric layer in a field effect transistor while removing hydrogen from the bulk portion of the gate dielectric layer. The thermal treatment process can reduce the amount of threshold voltage shift caused by a high-pressure anneal. The high-pressure anneal and the thermal treatment process may be performed any time after formation of the gate dielectric layer, thus, causing no disruption to the existing process flow.

公开(公告)号：US10283384B2

公开(公告)日：2019-05-07

申请号：US14696973

申请日：2015-04-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Manish Kumar Singh ,  Bo-Wei Chou ,  Jui-Ming Shih ,  Wen-Yu Ku ,  Ping-Jung Huang ,  Pi-Chun Yu

IPC: H01L21/67 ,  H01L21/311

Abstract: A method for etching an etch layer formed on a front side of a wafer and a wafer etching apparatus are provided. The wafer etching apparatus includes a first flow channel, a temperature-regulating module, and a second flow channel. The first flow channel is configured to carry a preheated/precooled liquid for controlling a temperature of a wafer. The temperature-regulating module is coupled to the first flow channel. The temperature-regulating module is configured to control a temperature of the liquid in the first flow channel. The second flow channel is configured to carry an etchant for etching an etch layer formed on a front side of the wafer. The method includes: controlling the temperature of the wafer by using the preheated/precooled liquid; and etching the etch layer with the etchant.