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    METHOD OF FORMING IMAGE SENSOR DEVICE
    13.
    发明申请
    METHOD OF FORMING IMAGE SENSOR DEVICE 有权

    公开(公告)号：US20210202564A1

    公开(公告)日：2021-07-01

    申请号：US17183871

    申请日：2021-02-24

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Chia-Yu WEI ,  Yen-Liang LIN ,  Kuo-Cheng LEE ,  Hsun-Ying HUANG ,  Hsin-Chi CHEN

    IPC: H01L27/146 ,  H01L31/103 ,  H01L31/0352

    Abstract: A method includes providing a semiconductor substrate having a front side surface and a back side surface opposite to the front side surface. A photosensitive region of the semiconductor substrate is etched to form a recess. A semiconductor material is deposited on the semiconductor substrate to form a radiation sensing member filling the recess. The semiconductor material has an optical band gap energy smaller than 1.77 eV. A device layer is formed over the front side surface of the semiconductor substrate and the radiation sensing member. A trench isolation is formed in an isolation region of the semiconductor substrate and extending from the back side surface of the semiconductor substrate.

    SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
    14.
    发明申请
    SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME 审中-公开

    公开(公告)号：US20190096830A1

    公开(公告)日：2019-03-28

    申请号：US15906214

    申请日：2018-02-27

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chia-Yu WEI ,  Cheng-Yuan LI ,  Yen-Liang LIN ,  Kuo-Cheng LEE ,  Hsun-Ying HUANG ,  Hsin-Chi CHEN

    IPC: H01L23/00 ,  H01L27/146

    Abstract: A semiconductor structure is provided. A first semiconductor device includes a first conductive layer formed over a first substrate; a first etching stop layer formed over the first conductive layer, and the first etching stop layer is in direct contact with the first conductive layer. A first bonding layer is formed over the first etching stop layer, and a first bonding via is formed through the first bonding layer and the first etching stop layer. The semiconductor structure includes a second semiconductor device. The second semiconductor device includes a second bonding layer formed over the second etching stop layer and a second bonding via formed through the second bonding layer and a second etching stop layer. A bonding structure between the first substrate and the second substrate, and the bonding structure includes the first bonding via bonded to the second bonding via.

    IMAGE SENSOR DEVICE WITH WHITE PIXEL IMPROVEMENT
    15.
    发明申请
    IMAGE SENSOR DEVICE WITH WHITE PIXEL IMPROVEMENT 有权
    具有白色像素改进的图像传感器设备

    公开(公告)号：US20160211293A1

    公开(公告)日：2016-07-21

    申请号：US14600949

    申请日：2015-01-20

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Chia-Yu WEI ,  Yin-Chen CHEN ,  Yen-Liang LIN ,  Yung-Lung HSU ,  Hsin-Chi CHEN

    IPC: H01L27/146 ,  H01L27/148

    CPC classification number: H01L27/14614 ,  H01L27/14638 ,  H01L27/14643 ,  H01L27/14689 ,  H01L27/148

    Abstract: An image sensor device is provided, and includes pixel units. Each of the pixel units includes a light sensing element, a first transistor and a second transistor. The first transistor is coupled to the light sensing element. The second transistor is coupled to the light sensing element and the first transistor. The first transistor includes a first gate structure having a first width, and the second transistor includes a second gate structure having a second width, in which a distance between the first gate structure and the second gate structure is substantially greater than the first width and the second width.

    Abstract translation: 提供了图像传感器装置，并且包括像素单元。 每个像素单元包括光感测元件，第一晶体管和第二晶体管。 第一晶体管耦合到感光元件。 第二晶体管耦合到光感测元件和第一晶体管。 第一晶体管包括具有第一宽度的第一栅极结构，并且第二晶体管包括具有第二宽度的第二栅极结构，其中第一栅极结构和第二栅极结构之间的距离基本上大于第一宽度， 第二宽度。

    IMAGE SENSOR DEVICE WITH LIGHT GUIDING STRUCTURE
    16.
    发明申请
    IMAGE SENSOR DEVICE WITH LIGHT GUIDING STRUCTURE 有权
    具有轻导向结构的图像传感器装置

    公开(公告)号：US20150264233A1

    公开(公告)日：2015-09-17

    申请号：US14211636

    申请日：2014-03-14

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Volume CHIEN ,  Su-Hua CHANG ,  Zen-Fong HUANG ,  Chia-Yu WEI ,  Chi-Cherng JENG ,  Hsin-Chi CHEN

    IPC: H04N5/225

    CPC classification number: H04N5/2254 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14685

    Abstract: An image sensor device and a manufacturing method for forming an image sensor device are provided. The image sensor device includes a semiconductor substrate having an array region and a periphery region. The image sensor device also includes a light sensing region in the array region of the semiconductor substrate. The image sensor device further includes a dielectric structure over the array region and the periphery region, and the dielectric structure has a substantially planar top surface. In addition, the image sensor device includes a recess in the dielectric structure and substantially aligned with the light sensing region. The image sensor device also includes a filter in the recess and a light blocking grid in the dielectric structure and surrounding a portion of the filter.

    Abstract translation: 提供了一种用于形成图像传感器装置的图像传感器装置和制造方法。 图像传感器装置包括具有阵列区域和周边区域的半导体基板。 图像传感器装置还包括在半导体衬底的阵列区域中的光感测区域。 图像传感器装置还包括在阵列区域和外围区域上的电介质结构，并且电介质结构具有基本平坦的顶表面。 此外，图像传感器装置包括在电介质结构中的凹槽，并基本上与光感测区域对准。 图像传感器装置还包括位于凹槽中的滤光器和电介质结构中的遮光栅格并围绕滤光器的一部分。

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