公开(公告)号：US11557508B2

公开(公告)日：2023-01-17

申请号：US16994091

申请日：2020-08-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ting-Li Yang ,  Wei-Li Huang ,  Sheng-Pin Yang ,  Chi-Cheng Chen ,  Hon-Lin Huang ,  Chin-Yu Ku ,  Chen-Shien Chen

IPC: H01L23/00 ,  H01L23/04 ,  H01L23/522 ,  H01L49/02 ,  H01F41/04 ,  H01F17/00 ,  H01L23/532 ,  H01L21/768

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first conductive line over a substrate. The semiconductor device structure includes a first protection cap over the first conductive line. The semiconductor device structure includes a first photosensitive dielectric layer over the substrate, the first conductive line, and the first protection cap. The semiconductor device structure includes a conductive via structure passing through the first photosensitive dielectric layer and connected to the first protection cap. The semiconductor device structure includes a second conductive line over the conductive via structure and the first photosensitive dielectric layer. The semiconductor device structure includes a second protection cap over the second conductive line. The semiconductor device structure includes a second photosensitive dielectric layer over the first photosensitive dielectric layer, the second conductive line, and the second protection cap.