公开(公告)号：US09714914B2

公开(公告)日：2017-07-25

申请号：US14600315

申请日：2015-01-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Lee-Chuan Tseng ,  Che-Ming Chang ,  Chung-Yen Chou ,  Yuan-Chih Hsieh

IPC: G01N27/403 ,  G01N27/414 ,  G01N33/487 ,  B82Y35/00

CPC classification number: G01N27/4145 ,  B82Y35/00 ,  G01N27/414 ,  G01N27/4148 ,  G01N33/48707 ,  G01N33/48785

Abstract: The present disclosure relates to an integrated chip having an integrated bio-sensor with a sensing well having one or more sensing well spacers that reduce a size of the sensing well after its formation. In some embodiments, the integrated bio-sensor has a sensing device disposed within a semiconductor substrate. A dielectric structure is disposed onto a first side of the semiconductor substrate. The dielectric structure has an opening with a first width, which is exposed to an ambient environment and that overlies the sensing device. One or more sensing well spacers are arranged on sidewalls of the opening. The one or more sensing well spacers expose a bottom surface of the opening to define a sensing well having a second width that is smaller than the first width.

公开(公告)号：US09224615B2

公开(公告)日：2015-12-29

申请号：US14023563

申请日：2013-09-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Che-Ming Chang ,  Lee-Chuan Tseng ,  Shih-Wei Lin ,  Chih-Jen Chan ,  Yuan-Chih Hsieh ,  Ming Chyi Liu ,  Chung-Yen Chou

IPC: H01L21/265 ,  H01L21/3065 ,  H01L27/00 ,  H01L21/263

CPC classification number: H01L21/30655 ,  H01L21/2633 ,  H01L21/3065 ,  H01L27/00

Abstract: A method of etching a trench in a substrate is provided. The method repeatedly alternates between using a fluorine-based plasma to etch a trench, which has trench sidewalls, into a selected region of the substrate; and using a fluorocarbon plasma to deposit a liner on the trench sidewalls. The liner, when formed and subsequently etched, has an exposed sidewall surface that includes scalloped recesses. The trench, which includes the scalloped recesses, is then bombarded with a molecular beam where the molecules are directed on an axis parallel to the trench sidewalls to reduce the scalloped recesses.

Abstract translation: 提供了蚀刻衬底中的沟槽的方法。 该方法在使用氟基等离子体之间重复地交替，以将具有沟槽侧壁的沟槽蚀刻到衬底的选定区域中; 以及使用氟碳等离子体将衬垫沉积在沟槽侧壁上。 衬里当形成并随后被蚀刻时具有包括扇形凹槽的暴露的侧壁表面。 包括扇形凹槽的沟槽然后用分子束轰击，其中分子被引导在平行于沟槽侧壁的轴上以减少扇形凹部。