公开(公告)号：US10032470B1

公开(公告)日：2018-07-24

申请号：US15649958

申请日：2017-07-14

Applicant: TDK Corporation

Inventor： Naomichi Degawa ,  Tetsuhito Shinohara ,  Shinji Hara ,  Tetsuya Roppongi

IPC: G11B5/31 ,  G11B5/39 ,  G11B5/60 ,  G11B5/23 ,  G11B5/187

Abstract: A magnetic recording head comprises: a main magnetic pole for generating a recording magnetic field applied to a magnetic recording medium from an end surface that is one part of an air bearing surface facing the magnetic recording medium; a trailing shield that is placed by interposing a write gap at a trailing side of the main magnetic pole; and a spin torque oscillator provided in the write gap; wherein, when viewed from the air bearing surface side, the length in the down-track direction between the trailing shield and the cross-track direction end portion of a first end face positioned at the main magnetic pole side of the spin torque oscillator is longer than the length in the down-track direction between the trailing shield and the main magnetic pole at a center position in the cross-track direction of the spin torque oscillator.

公开(公告)号：US09478238B1

公开(公告)日：2016-10-25

申请号：US14753301

申请日：2015-06-29

Applicant: TDK Corporation

Inventor： Naomichi Degawa ,  Kenzo Makino ,  Satoshi Miura ,  Takayasu Kanaya

IPC: G11B5/39 ,  G11B5/60

CPC classification number: G11B5/3912 ,  G01R33/098 ,  G11B5/3932 ,  G11B2005/3996

Abstract: A magneto-resistive effect element (MR element) has a first shield layer; a second shield layer; an inner shield layer that is positioned between the first shield layer and the second shield layer, and that makes contact with the first shield layer and faces the air bearing surface (ABS); and a multilayer film that is positioned between the first shield layer and the second shield layer. The multilayer film has a free layer; a first pinned layer; a nonmagnetic spacer layer; a second pinned layer that fixes the magnetization direction of the first pinned layer; and an antiferromagnetic layer that is exchange-coupled with the second pinned layer. The antiferromagnetic layer faces the back surface of the inner shield layer viewed from the ABS. The MR element has an insulating layer positioned between the antiferromagnetic layer and the inner shield layer.

Abstract translation: 磁阻效应元件（MR元件）具有第一屏蔽层; 第二屏蔽层; 位于所述第一屏蔽层和所述第二屏蔽层之间并且与所述第一屏蔽层接触并面向所述空气轴承表面（ABS）的内屏蔽层; 以及位于所述第一屏蔽层和所述第二屏蔽层之间的多层膜。 多层膜具有自由层; 第一个固定层; 非磁性间隔层; 固定所述第一固定层的磁化方向的第二固定层; 以及与第二被钉扎层交换耦合的反铁磁层。 反铁磁层面对从ABS观察的内屏蔽层的后表面。 MR元件具有位于反铁磁层和内屏蔽层之间的绝缘层。

公开(公告)号：US08913349B2

公开(公告)日：2014-12-16

申请号：US13853869

申请日：2013-03-29

Applicant: TDK Corporation

Inventor： Takekazu Yamane ,  Takahiko Machita ,  Naomichi Degawa ,  Minoru Ota ,  Kenta Hamamoto

IPC: G11B5/39 ,  H01L43/08

CPC classification number: G11B5/3932 ,  G01R33/0076 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3912

Abstract: An MR element includes an MR part and upper and lower shield layers in a CPP structure. The MR element has side shield layers so as to interpose the MR part between the side shield layers in a track width direction. The MR part comprises a nonmagnetic intermediate layer and first and second ferromagnetic layers so as to interpose the nonmagnetic intermediate layer between the ferromagnetic layers. Each of the upper and lower shield layers has an inclined magnetization structure such that its magnetization is inclined relative to the track width direction. The side shield layers are magnetically coupled with the upper shield layer, respectively. The second ferromagnetic layer is indirectly magnetically coupled with the lower shield layer via an exchange-coupling functional gap layer. The side shield layer applies a bias magnetic field to the first ferromagnetic layer; and magnetizations of the first and second ferromagnetic layers are substantially orthogonal.

Abstract translation: MR元件包括CP部分和CPP结构中的上下屏蔽层。 MR元件具有侧屏蔽层，以便在侧屏蔽层之间沿轨道宽度方向插入MR部分。 MR部分包括非磁性中间层和第一和第二铁磁层，以将非磁性中间层介于铁磁层之间。 上下屏蔽层中的每一个具有倾斜的磁化结构，使得其磁化相对于磁道宽度方向倾斜。 侧屏蔽层分别与上屏蔽层磁耦合。 第二铁磁层经由交换耦合功能间隙层与下屏蔽层间接地磁耦合。 侧屏蔽层向第一铁磁层施加偏置磁场; 并且第一和第二铁磁层的磁化基本上是正交的。

公开(公告)号：US08891208B2

公开(公告)日：2014-11-18

申请号：US13853927

申请日：2013-03-29

Applicant: TDK Corporation

Inventor： Naomichi Degawa ,  Takahiko Machita ,  Takekazu Yamane ,  Takumi Yanagisawa ,  Satoshi Miura ,  Kenta Hamamoto ,  Minoru Ota ,  Kenzo Makino ,  Shohei Kawasaki

IPC: G11B5/39 ,  H01L43/08

CPC classification number: G11B5/3932 ,  G01R33/0076 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3912

Abstract: An MR element suppressing a false writing into a medium with an MR part has a CPP structure. The MR part includes a nonmagnetic intermediate layer and first and second ferromagnetic layers so as to interpose the nonmagnetic intermediate layer. First and second shield layers respectively have an inclining magnetization structure of which a magnetization is inclined with regard to a track width direction. The first and second ferromagnetic layers are respectively, magnetically coupled with the first and second shield layers. A magnetization direction adjustment layer for adjusting at least a magnetization direction of the first ferromagnetic layer is positioned at a rear end surface side of the first ferromagnetic layer, which is opposite to a front end surface receiving a magnetic field detected in the MR part.

Abstract translation: 抑制对具有MR部件的介质的错误写入的MR元件具有CPP结构。 MR部分包括非磁性中间层和第一和第二铁磁层，以便插入非磁性中间层。 第一和第二屏蔽层分别具有磁化相对于磁道宽度方向倾斜的倾斜磁化结构。 第一和第二铁磁层分别与第一和第二屏蔽层磁耦合。 用于调节至少第一铁磁层的磁化方向的磁化方向调整层位于与在MR部分中检测到的磁场接收的前端面相反的第一铁磁性层的后端面侧。