Light emitting device
    11.
    发明授权

    公开(公告)号:US11424410B2

    公开(公告)日:2022-08-23

    申请号:US16333782

    申请日:2017-09-27

    摘要: A light emitting device having an anode, a cathode, a first organic layer and a second organic layer disposed between the anode and the cathode is provided. The first organic layer is a layer containing a light emitting material represented by the formula (T) and the second organic layer is a layer containing a crosslinked body of a polymer compound containing a crosslink constitutional unit wherein the variable groups are as defined in the specification:

    Composition for light emitting device and light emitting device containing the same

    公开(公告)号:US11420930B2

    公开(公告)日:2022-08-23

    申请号:US16969767

    申请日:2019-12-06

    摘要: A composition useful for the production of a light emitting device showing suppressed initial degradation, and a light emitting device formed by using the composition are provided. The composition contains a blended host material and a guest material, in which the host material contains an aromatic compound having a condensed ring skeleton in which only three or more benzene rings are condensed, the guest material contains an aromatic amine compound, and the total amount of a silicon atom contained in the host material and a silicon atom contained in the guest material is 20 ppm by mass or less with respect to the total amount of the host material and the guest material.

    Film production method
    13.
    发明授权

    公开(公告)号:US10964902B2

    公开(公告)日:2021-03-30

    申请号:US16069571

    申请日:2017-01-19

    摘要: A method of producing a film having excellent external quantum efficiency when used in a light emitting layer of a light emitting device is provided. A method of film production includes preparing an ink containing a specific metal complex, storing the ink for 3 days or more under light shielding, and forming a film by using the stored ink. The total content of metal complexes having a molecular weight larger by 16, 32 or 48 than that of the specific metal complex according to an area percentage value determined by liquid chromatography is 0.6 or less when the content of the specific metal complex is taken as 100.

    Light emitting device having thermally activated delayed fluorescent (TADF) compound

    公开(公告)号:US11515477B2

    公开(公告)日:2022-11-29

    申请号:US16642412

    申请日:2017-09-06

    IPC分类号: H01L51/00 C09K11/06 H01L51/50

    摘要: A light emitting device having excellent external quantum efficiency contains an anode, a cathode, and two organic layers disposed therebetween. One layer contains a phosphorescent transition metal complex and a low molecular weight compound containing no transition metal, and the second layer contains a crosslinked body of a polymer compound (having an energy level of the lowest triplet excited state of 2.30 eV or more) containing a constitutional unit having a crosslinking group. The low molecular weight compound has formula (T-1) and the absolute value of the difference between the energy levels of the lowest triplet excited state and the lowest singlet excited state is less than 0.25 eV. nT1 represents an integer of 0 to 5, nT2 represents an integer of 1 to 10, ArT1 represents a substituted amino group or a monovalent hetero ring group, LT1 represents an alkylene group, and ArT2 represents a hetero ring group.

    Light emitting device and composition useful for production of same light emitting device

    公开(公告)号:US11271166B2

    公开(公告)日:2022-03-08

    申请号:US16333871

    申请日:2017-09-27

    IPC分类号: H01L51/50 H01L51/00

    摘要: A light emitting device having an anode, a cathode, a first organic layer disposed between the anode and the cathode and a second organic layer disposed between the anode and the cathode is provided. The first organic layer is a layer containing a compound (T) in which the absolute value of the difference between the energy level at the lowest triplet excited state and the energy level at the lowest singlet excited state is 0.5 eV or less and not containing a phosphorescent metal complex. The second organic layer is a layer containing a crosslinked body of a polymer compound containing a crosslink constitutional unit and the energy level at the lowest triplet excited state of the polymer compound is 2.25 eV or more.

    Light emitting device
    18.
    发明授权

    公开(公告)号:US11225602B2

    公开(公告)日:2022-01-18

    申请号:US16307161

    申请日:2017-06-16

    摘要: A light emitting device having excellent external quantum efficiency contains an anode, a cathode, and two organic layers between the anode and cathode. The first organic layer contains a fluorescent low-molecular weight compound, and the second organic layer contains a cross-linked body of a cross-linkable polymer compound containing a unit having a group obtained from a metal complex represented by the formula (1), a cross-linkable constitutional unit having a cross-linkable group, and an aromatic amine constitutional unit: In formula (1), M represents a palladium atom, n1 represents an integer of 1 or more, n2 represents an integer of 0 or more, E1 and E2 represent a carbon atom, Ring L1 represents an aromatic hetero ring, Ring L2 represents an aromatic hydrocarbon ring or an aromatic hetero ring, and A1-G1-A2 represents an anionic bidentate ligand.

    Method for producing a composition for a light-emitting element and method for evaluating same

    公开(公告)号:US11158829B2

    公开(公告)日:2021-10-26

    申请号:US16642475

    申请日:2019-05-16

    IPC分类号: H01L51/50 H01L51/00 H01L51/56

    摘要: A composition for a light-emitting element contains a host material and a guest material. The host material is a compound containing at least one of an aromatic hydrocarbon group and a heterocyclic group and the guest material is a compound having a condensed heterocyclic group containing at least one of a boron atom, an oxygen atom, a sulfur atom, a selenium atom, an sp3 carbon atom, and a nitrogen atom in a ring. A difference ΔE between an energy value at the maximum peak of a emission spectrum of the host material at 25° C. and an energy value at a peak on the lowest energy side of an absorption spectrum of the guest material at 25° C. is 0.50 eV or less, and a difference ΔS between an energy value at the maximum peak of an emission spectrum of the guest material at 25° C. and an energy value at the maximum peak of an emission spectrum of the guest material at 77 K is 0.10 eV or less.