公开(公告)号：US11572504B2

公开(公告)日：2023-02-07

申请号：US16851509

申请日：2020-04-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji-Yeong Kim ,  Soo Kyung Kwon ,  Seon-Yeong Kim ,  Yong Wook Kim ,  Eun Joo Jang

IPC: C09K11/54 ,  C09K11/64 ,  C09K11/02 ,  C09K11/57 ,  C09K11/58 ,  C09K11/88 ,  B82Y20/00

Abstract: A core-shell quantum dot comprising zinc, a core comprising a first semiconductor nanocrystal material; and a semiconductor nanocrystal shell disposed on the core, wherein the core-shell quantum dot does not comprise cadmium, and does comprise zinc, tellurium, selenium, and aluminum.

公开(公告)号：US11193062B2

公开(公告)日：2021-12-07

申请号：US16825293

申请日：2020-03-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Garam Park ,  Tae Gon Kim ,  Nayoun Won ,  Shin Ae Jun ,  Soo Kyung Kwon ,  Seon-Yeong Kim ,  Shang Hyeun Park ,  Jooyeon Ahn ,  Yuho Won ,  Eun Joo Jang ,  Hyo Sook Jang

IPC: C09K11/88 ,  C09K11/62 ,  C09K11/70 ,  C09K11/56 ,  C09K11/02 ,  H01L27/32 ,  F21V8/00 ,  G02F1/1335 ,  G02F1/13357 ,  H05B33/14 ,  A61B6/06 ,  A61B6/00 ,  G01T7/00 ,  G21K1/02 ,  B82Y20/00 ,  B82Y40/00 ,  A61B6/02

Abstract: Disclosed are a quantum dot population including a plurality of cadmium free quantum dots, a quantum dot polymer composite including the same, and a display device including the same. The plurality of cadmium free quantum dots includes: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, wherein an average particle size of the plurality of cadmium free quantum dots is greater than or equal to about 5.5 nm, a standard deviation of particle sizes of the plurality of cadmium free quantum dots is less than or equal to about 20% of the average particle size, and an average solidity of the plurality of cadmium free quantum dots is greater than or equal to about 0.85.

公开(公告)号：US10191326B2

公开(公告)日：2019-01-29

申请号：US15366579

申请日：2016-12-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chul Ho Jung ,  Hyun A Kang ,  Soo Kyung Kwon ,  Won Joo Lee ,  Eun Joo Jang ,  Hyo Sook Jang ,  Shin Ae Jun ,  Oul Cho ,  In Taek Han

IPC: G02F1/13357 ,  G02F1/1335 ,  F21V8/00

Abstract: A film for a backlight unit including a semiconductor nanocrystal-polymer composite film including a semiconductor nanocrystal and a matrix polymer in which the semiconductor nanocrystal is dispersed, wherein the matrix polymer is a polymer produced by a polymerization of a multifunctional photo-curable oligomer, a mono-functional photo-curable monomer, and a multifunctional photo-curable cross-linking agent, the multifunctional photo-curable oligomer has an acid value of less than or equal to about 0.1 mg of KOH/g, and a content (A1) of a first structural unit derived from the multifunctional photo-curable oligomer, a content (A2) of a second structural unit derived from the mono-functional photo-curable monomer, and a content (A3) of a third structural unit derived from the multifunctional photo-curable cross-linking agent satisfy Equation 1: A1

公开(公告)号：US10170648B2

公开(公告)日：2019-01-01

申请号：US14039788

申请日：2013-09-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Shin Ae Jun ,  Eun Joo Jang ,  Soo Kyung Kwon ,  Taek Hoon Kim ,  Won Joo Lee

IPC: H01L31/0296 ,  H01L31/0304 ,  H01L31/0352 ,  B82Y40/00 ,  B82Y30/00

Abstract: A nanocrystal including a core including a Group III element and a Group V element, and a monolayer shell on the surface of the core, the shell including a compound of the formula ZnSexS(1-x), wherein 0≤x≤1, and wherein an average mole ratio of Se:S in the monolayer shell ranges from about 2:1 to about 20:1.

公开(公告)号：US12187942B2

公开(公告)日：2025-01-07

申请号：US18297033

申请日：2023-04-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong Wook Kim ,  Eun Joo Jang ,  Hyo Sook Jang ,  Soo Kyung Kwon ,  Seon-Yeong Kim ,  Ji-Yeong Kim

IPC: C09K11/88 ,  C09K11/02 ,  C09K11/08 ,  C09K11/56 ,  F21V8/00 ,  G02F1/13357 ,  H10K59/12 ,  H10K59/38 ,  B82Y20/00 ,  B82Y40/00

Abstract: A cadmium free quantum dot includes zinc, tellurium, and selenium, and lithium. A full width at half maximum of a maximum luminescent peak of the cadmium free quantum dot is less than or equal to about 50 nanometers and the cadmium free quantum dot has a quantum efficiency of greater than 1%.

公开(公告)号：US12187939B2

公开(公告)日：2025-01-07

申请号：US18130453

申请日：2023-04-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihyun Min ,  Seon-Yeong Kim ,  Eun Joo Jang ,  Hyo Sook Jang ,  Soo Kyung Kwon ,  Yong Wook Kim

IPC: C09K11/70 ,  C09K11/62 ,  C09K11/88 ,  H01L29/12 ,  H10K59/38

Abstract: A quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core and does not include cadmium, wherein the core includes a Group III-V compound, the quantum dot has a maximum photoluminescence peak in a green light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than about 50 nanometers (nm), and a difference between a wavelength of the maximum photoluminescence peak and a first absorption peak wavelength of the quantum dot is less than or equal to about 25 nanometers, and a production method thereof.

公开(公告)号：US12164193B2

公开(公告)日：2024-12-10

申请号：US18378606

申请日：2023-10-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong Wook Kim ,  Soo Kyung Kwon ,  Jaeyong Lee

IPC: G02F1/13357 ,  G02F1/1335

Abstract: A display device includes a display panel, a backlight unit, and a light conversion sheet between the display panel and the backlight unit. The backlight unit includes a substrate and light-emitting sections arranged on the substrate, one or more light sources are disposed in each of the light-emitting sections, the light conversion sheet includes first partition walls and light conversion sections arranged to correspond to the light-emitting sections, a first partition wall of the first partition walls is disposed between adjacent light conversion sections of the light conversion sections. Each of the light conversion sections includes first quantum dots emitting a first light and second quantum dots emitting a second light having a color different from a color of the first light, and the at least one light source provides light of a predetermined wavelength to the light conversion sheet.

公开(公告)号：US11905447B2

公开(公告)日：2024-02-20

申请号：US17502667

申请日：2021-10-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungwoo Hwang ,  Yong Wook Kim ,  Soo Kyung Kwon ,  Seon-Yeong Kim ,  Ji-Yeong Kim

IPC: C09K11/88 ,  C09K11/56 ,  C09K11/02 ,  H10K50/115 ,  C01G9/00 ,  B82Y40/00 ,  B82Y30/00 ,  B82Y20/00

CPC classification number: C09K11/883 ,  C01G9/006 ,  C09K11/565 ,  C09K11/567 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01P2004/64 ,  C01P2004/84 ,  C01P2006/60

Abstract: A cadmium free quantum dot including a core that includes a first semiconductor nanocrystal including zinc, tellurium, and selenium, and a semiconductor nanocrystal shell that is disposed on the core and includes a zinc chalcogenide, wherein the quantum dot further includes magnesium and the mole ratio of Te:Se is greater than or equal to about 0.1:1 in the quantum dot; a production method thereof; and an electronic device including the same.

公开(公告)号：US11702593B2

公开(公告)日：2023-07-18

申请号：US17186434

申请日：2021-02-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihyun Min ,  Soo Kyung Kwon ,  Seon-Yeong Kim ,  Yong Wook Kim ,  Ji-Yeong Kim ,  Eun Joo Jang ,  Sungwoo Hwang

IPC: C09K11/88 ,  C09K11/02 ,  H10K50/115 ,  H10K59/38 ,  B82Y40/00 ,  F21V8/00 ,  G02F1/1335 ,  B82Y20/00

CPC classification number: C09K11/883 ,  C09K11/02 ,  H10K50/115 ,  H10K59/38 ,  B82Y20/00 ,  B82Y40/00 ,  G02B6/005 ,  G02F1/133614 ,  G02F2202/36

Abstract: A quantum dot including a core and a shell disposed on an outer surface of the core. The core includes a first semiconductor nanocrystal including a Group II-VI compound. The shell includes a second semiconductor nanocrystal. An effective mass of the second semiconductor nanocrystal is about 0.5 times to about 2.0 times an effective mass of the first semiconductor nanocrystal and the quantum dot does not include cadmium, lead, mercury, or a combination thereof.

公开(公告)号：US11639466B2

公开(公告)日：2023-05-02

申请号：US16851520

申请日：2020-04-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong Wook Kim ,  Eun Joo Jang ,  Hyo Sook Jang ,  Soo Kyung Kwon ,  Seon-Yeong Kim ,  Ji-Yeong Kim

IPC: C09K11/88 ,  C09K11/02 ,  F21V8/00 ,  G02F1/13357 ,  H01L27/32 ,  C09K11/08 ,  C09K11/56 ,  B82Y20/00 ,  B82Y40/00

Abstract: A cadmium free quantum dot includes zinc, tellurium, and selenium, and lithium. A full width at half maximum of a maximum luminescent peak of the cadmium free quantum dot is less than or equal to about 50 nanometers and the cadmium free quantum dot has a quantum efficiency of greater than 1%.