公开(公告)号：US11869913B2

公开(公告)日：2024-01-09

申请号：US17703217

申请日：2022-03-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongmin Keum ,  Taehan Kim ,  Bumsuk Kim ,  Junsung Park ,  Kwanghee Lee ,  Yunki Lee

IPC: H01L27/146 ,  H01L21/66 ,  H04N25/40 ,  H04N25/702

CPC classification number: H01L27/14627 ,  H01L22/20 ,  H01L27/14685 ,  H04N25/40 ,  H04N25/702 ,  H01L27/1463 ,  H01L27/14621 ,  H01L27/14645

Abstract: A pixel array of an image sensor includes a plurality of pixel groups. Each pixel group includes a plurality of unit pixels adjacent to each other and respectively including photoelectric conversion elements disposed in a semiconductor substrate, a color filter shared by the plurality of unit pixels, and a plurality of microlenses disposed on the color filter and having sizes different from each other such that the plurality of microlenses respectively focus an incident light to the photoelectric conversion elements included in the plurality of unit pixels. Deviations of sensing sensitivity of unit pixels are reduced and quality of images captured by the image sensor is enhanced by adjusting sizes of microlenses.

公开(公告)号：US20230246045A1

公开(公告)日：2023-08-03

申请号：US18147092

申请日：2022-12-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Taehan Kim ,  Dongmin Keum ,  Bumsuk Kim ,  Kwanghee Lee ,  Yunki Lee ,  Yeaju Jang

IPC: H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/14645 ,  H01L27/14627

Abstract: There is provided an image sensor including first to fourth color filter layers arranged on a substrate and first to seventh microlenses arranged on the first to fourth color filter layers. The first microlenses vertically overlap diagonal components of a first submatrix comprised of green-red subpixels. The second and third group of microlenses vertically overlap off-diagonal components of the first submatrix comprised of green-red subpixels. A horizontal area of each of the second group of microlenses is less than a horizontal area of each of the first microlenses and a horizontal area of each of the third group of microlenses is greater than a horizontal area of each of the first microlenses.

公开(公告)号：US11695024B2

公开(公告)日：2023-07-04

申请号：US16996047

申请日：2020-08-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Masato Fujita ,  Yunki Lee ,  Eunsub Shim ,  Kyungho Lee ,  Bumsuk Kim ,  Taehan Kim

IPC: H01L27/146 ,  H04N25/59 ,  H04N25/704 ,  H04N25/709 ,  H04N25/772

CPC classification number: H01L27/14612 ,  H01L27/1463 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14645 ,  H04N25/59 ,  H04N25/704 ,  H04N25/709 ,  H04N25/772

Abstract: An image sensor includes a first photodiode group, a second photodiode group, a first transfer transistor group, a second transfer transistor group, a floating diffusion region of a substrate in which electric charges generated in the first photodiode group are stored, and a power supply node for applying a power supply voltage to the second photodiode group. A barrier voltage is applied to at least one transfer transistor of the second transfer transistor group. The power supply voltage allows electric charges, generated in the second photodiode group, to migrate to the power supply node, and the barrier voltage forms a potential barrier between the second photodiode group and the floating diffusion region.