公开(公告)号：US20190013391A1

公开(公告)日：2019-01-10

申请号：US15995049

申请日：2018-05-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunmin MOON ,  Young-Lim PARK ,  Kyuho CHO ,  HANJIN LIM

IPC: H01L29/51 ,  H01L29/06 ,  H01L29/15 ,  H01L21/762

Abstract: Disclosed is a semiconductor device including a bottom electrode, a dielectric layer, and a top electrode that are sequentially disposed on a substrate. The dielectric layer includes a hafnium oxide layer including hafnium oxide having a tetragonal crystal structure, and an oxidation seed layer including an oxidation seed material. The oxidation seed material has a lattice constant having a lattice mismatch of 6% or less with one of a horizontal lattice constant and a vertical lattice constant of the hafnium oxide having the tetragonal crystal structure.