公开(公告)号：US20230120532A1

公开(公告)日：2023-04-20

申请号：US17717268

申请日：2022-04-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sooyeon Hong ,  Deokhan Bae ,  Juhun Park ,  Yuri Lee ,  Yoonyoung Jung

IPC: H01L29/417 ,  H01L29/40 ,  H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786

Abstract: A semiconductor device of the disclosure includes an active pattern extending on a substrate in a first direction, a gate structure extending on the active pattern in a second direction intersecting the first direction, a source/drain region disposed on at least one side of the gate structure, a source/drain contact connected to the source/drain region, and a contact insulating layer disposed on the source/drain contact. The contact insulating layer includes at least one air gap. The air gap is disposed on an upper surface of the source/drain contact.

公开(公告)号：US11217673B2

公开(公告)日：2022-01-04

申请号：US16874812

申请日：2020-05-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Deokhan Bae ,  Sungmin Kim ,  Juhun Park ,  Yoonyoung Jung

IPC: H01L29/417 ,  H01L29/78 ,  H01L27/092 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66 ,  H01L29/06 ,  H01L29/08 ,  H01L21/02 ,  H01L21/8238

Abstract: A semiconductor device including: a substrate including a first active region; a first active pattern on the first active region; a gate electrode intersecting the first active pattern and extending in a first direction; a first source/drain pattern on the first active pattern, the first source/drain pattern adjacent to the gate electrode; a first interlayer insulating layer covering the gate electrode and the first source/drain pattern; and an active contact penetrating the first interlayer insulating layer to be electrically connected to the first source/drain pattern, wherein the active contact extends in the first direction, wherein a top surface of the active contact includes: a first protrusion; a second protrusion; and a first depression between the first and second protrusions.