公开(公告)号：US11941293B2

公开(公告)日：2024-03-26

申请号：US17518770

申请日：2021-11-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woohyun Kang ,  Hyuna Kim ,  Minkyu Kim ,  Donghoo Lim ,  Sanghyun Choi

IPC: G06F3/06 ,  G06F11/10 ,  G06F13/28 ,  G11C16/04 ,  G11C16/14 ,  G11C16/26 ,  G11C11/56

CPC classification number: G06F3/0659 ,  G06F3/0604 ,  G06F3/0679 ,  G06F11/1068 ,  G06F13/28 ,  G11C16/0483 ,  G11C16/14 ,  G11C16/26 ,  G11C11/5671

Abstract: A storage controller communicates with a non-volatile memory device, and an operation method of the storage controller includes determining whether a first read voltage is registered at a history table, when it is determined that the first read voltage is registered at the history table, performing a first direct memory access (DMA) read operation on data stored in the non-volatile memory device, based on the first read voltage, obtaining a page count value, based on the first DMA read operation, determining a second read voltage different from the first read voltage based on a difference between the page count value and an idle count value, without an additional read operation for the data stored in the non-volatile memory device, and updating the first read voltage of the history table based on the second read voltage.

公开(公告)号：US20240078018A1

公开(公告)日：2024-03-07

申请号：US18127133

申请日：2023-03-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinyoung Lee ,  Woohyun Kang ,  Youngjoo Seo ,  Hyunkyo Oh ,  Heewon Lee ,  Donghoo Lim ,  Jin Gu Jeong

IPC: G06F3/06

CPC classification number: G06F3/0614 ,  G06F3/0653 ,  G06F3/0659 ,  G06F3/0679

Abstract: Disclosed is a method of operating a storage device which includes a storage controller and a non-volatile memory device. The method includes providing a first request indicating a word line sequential read operation of a target memory block of the non-volatile memory device, providing first word line read data corresponding to memory cells of a first word line of the target memory block based on the first request, providing second word line read data corresponding to memory cells of a second word line of the target memory block based on the first request, the second word line being adjacent to the first word line, calculating a first word line gap value based on the first word line read data and the second word line read data, and performing a first reliability operation of the target memory block based on the first word line gap value.

公开(公告)号：US20220214826A1

公开(公告)日：2022-07-07

申请号：US17376437

申请日：2021-07-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngdeok Seo ,  Jinyoung Kim ,  Sehwan Park ,  Dongmin Shin ,  Woohyun Kang ,  Shinho Oh

IPC: G06F3/06 ,  G06N3/08

Abstract: A method of operating a nonvolatile memory device is provided. The method includes: dividing a memory block of a plurality of memory blocks provided in the nonvolatile memory device into a plurality of retention groups; generating time-difference information including a plurality of erase program interval (EPI) values corresponding to the plurality of retention groups; generating offset information including a plurality of offset values corresponding to differences between a plurality of default read voltages and a plurality of corrected read voltages; generating compensated read voltages corresponding to a read address based on the offset information and the time-difference information; and performing a read operation to read data from the nonvolatile memory device based on the read address and the compensated read voltages.