公开(公告)号：US20170351900A1

公开(公告)日：2017-12-07

申请号：US15612601

申请日：2017-06-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wu Seong LEE ,  Sihong KIM ,  Taekyun KIM ,  Young-Chul SHIN ,  Jung-Jae LEE ,  Jonghee HAN ,  Seung-Nyun KIM ,  Byoung-Uk YOON ,  So-Young LEE

IPC: G06K9/00 ,  B64D47/08 ,  G05D1/00 ,  G06K9/46 ,  H04N5/232 ,  H04N5/225 ,  B64C39/02 ,  G06T7/73 ,  G05D1/10 ,  H04N13/02

CPC classification number: G06K9/0063 ,  B64C39/024 ,  B64C2201/127 ,  B64C2201/146 ,  B64D47/08 ,  G01C11/02 ,  G05D1/0094 ,  G06K9/00228 ,  G06K9/00255 ,  H04N5/2257 ,  H04N5/23203 ,  H04N5/23206 ,  H04N13/239 ,  H04N13/296

Abstract: An unmanned photographing device and method thereof is provided which includes establishing a wireless connection with an external electronic device using a communication device, receiving a first signal at a first three-dimensional (3D) position from the external electronic device through the wireless connection, the first signal comprising data associated with a first image comprising a first object, determining a second 3D position based on at least part of the data and the first 3D position, controlling the unmanned photographing device to fly to or near the second 3D position, tracking a second object corresponding to the first object using a camera, and capturing a second image comprising the second object at or near the second 3D position such that the second image corresponds to the first image.

公开(公告)号：US20220037461A1

公开(公告)日：2022-02-03

申请号：US17189700

申请日：2021-03-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gihee CHO ,  Sangyeol KANG ,  Jungoo KANG ,  Taekyun KIM ,  Jiwoon PARK ,  Sanghyuck AHN ,  Jin-Su LEE ,  Hyun-Suk LEE ,  Hongsik CHAE

IPC: H01L49/02 ,  H01L27/108

Abstract: A semiconductor device and a method of manufacturing the same, the device including a plurality of lower electrodes on a semiconductor substrate; a support pattern connecting the lower electrodes at sides of the lower electrodes; and a dielectric layer covering the lower electrodes and the support pattern, wherein each of the plurality of lower electrodes includes a pillar portion extending in a vertical direction perpendicular to a top surface of the semiconductor substrate; and a protrusion protruding from a sidewall of the pillar portion so as to be in contact with the support pattern, the pillar portion includes a conductive material, the protrusion includes a same conductive material as the pillar portion and is further doped with impurities.