公开(公告)号：US20220367479A1

公开(公告)日：2022-11-17

申请号：US17716215

申请日：2022-04-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyunghwan LEE ,  Yongseok KIM ,  Hyuncheol KIM ,  Dongsoo WOO ,  Sungwon YOO

IPC: H01L27/108 ,  H01L29/423 ,  H01L29/792

Abstract: A semiconductor memory device includes a semiconductor substrate a gate structure extending in a vertical direction on the semiconductor device, a plurality of charge trap layers spaced apart from each other in the vertical direction and each having a horizontal cross-section with a first ring shape surrounding the gate structure, a plurality of semiconductor patterns spaced apart from each other in the vertical direction and each having a horizontal cross-section with a second ring shape surrounding the plurality of charge trap layers, a source region and a source line at one end of each of the plurality of semiconductor patterns in a horizontal direction, and a drain region and a drain line at an other end of each of the plurality of semiconductor patterns in the horizontal direction. The gate structure may include a gate insulation layer and a gate electrode layer.

公开(公告)号：US20220352170A1

公开(公告)日：2022-11-03

申请号：US17725069

申请日：2022-04-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyunghwan LEE ,  Yongseok KIM ,  Ilgweon KIM ,  Hyeoungwon SEO ,  Sungwon YOO ,  Jaeho HONG

IPC: H01L27/108

Abstract: A semiconductor memory device includes a word line extending in a vertical direction, a semiconductor pattern having a ring-shaped horizontal cross-section that extends around the word line, a bit line disposed at a first end of the semiconductor pattern, and a capacitor structure disposed at second end of the semiconductor pattern. The capacitor structure includes a lower electrode layer electrically connected to the second end of the semiconductor pattern, having a ring-shaped horizontal cross-section, and including a connector extending in the vertical direction. A first segment extends in a horizontal direction from an upper end of the connector, and a second segment extends in the horizontal direction from a lower end of the connector. An upper electrode layer surrounded by the lower electrode layer, extends in the vertical direction, and a capacitor dielectric layer is between the lower electrode layer and the upper electrode layer.

公开(公告)号：US20220216239A1

公开(公告)日：2022-07-07

申请号：US17503713

申请日：2021-10-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungwon YOO ,  Yongseok KIM ,  Ilgweon KIM ,  Hyuncheol KIM ,  Hyeoungwon SEO ,  Kyunghwan LEE ,  Jaeho HONG

IPC: H01L27/12 ,  H01L27/13 ,  H01L25/065 ,  H01L25/18 ,  H01L21/84

Abstract: A semiconductor memory device is disclosed. The semiconductor memory device may include a data storage layer including data storage devices, an interconnection layer disposed on the data storage layer, and a selection element layer provided between the data storage layer and the interconnection layer. The interconnection layer may include bit lines extending in a first direction. The selection element layer may include a cell transistor connected between one of the data storage devices and one of the bit lines, and the cell transistor may include an active pattern and a word line, which crosses the active pattern and is extended in a second direction crossing the first direction.