公开(公告)号：US10249604B2

公开(公告)日：2019-04-02

申请号：US14656298

申请日：2015-03-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kunmo Chu ,  Changyoul Moon ,  Sunghee Lee ,  Junsik Hwang

IPC: H01L23/48 ,  H01L25/00 ,  H01L23/00 ,  H01L25/065 ,  H01L33/00

Abstract: A semiconductor device includes a base substrate and a semiconductor chip on the base substrate, the semiconductor chip including a first layer structure and a second layer structure opposite to the first layer structure, at least one of the first and second layer structures including a semiconductor device portion, and a bonding structure between the first layer structure and the second layer structure, the bonding structure including a silver-tin (Ag—Sn) compound and a nickel-tin (Ni—Sn) compound.

公开(公告)号：US20150003607A1

公开(公告)日：2015-01-01

申请号：US14316681

申请日：2014-06-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongmu Choi ,  Sunghee Lee ,  Changsoon Kim

IPC: H04L9/08

Abstract: A secure connection method and apparatus is provided for establishing secure connections among a plurality of electronic devices forming a group network. The data communication method includes generating, when creating or joining a group network, an encryption key using a password entered by a user. The data communication method also includes generating an identifier of the group network. The data communication method further includes generating a hash function predefined among the electronic devices of the group network. The data communication method includes performing data communication using the encryption key.

Abstract translation: 提供了一种用于在形成组网的多个电子设备之间建立安全连接的安全连接方法和装置。 数据通信方法包括在使用用户输入的密码时，在创建或加入组网络时生成加密密钥。 数据通信方法还包括生成组网的标识符。 数据通信方法还包括生成在组网的电子设备之间预定义的散列函数。 数据通信方法包括使用加密密钥进行数据通信。

公开(公告)号：US12192840B2

公开(公告)日：2025-01-07

申请号：US16994344

申请日：2020-08-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Madhan Raj Kanagarathinam ,  Chounjong Nam ,  Gaurav Sinha ,  Gunjan kumar Choudhary ,  Karthikeyan Arunachalam ,  Sunghee Lee ,  Sujith Rengan Jayaseelan ,  Dronamraju Siva Sabareesh ,  Harikrishnan Natarajan ,  Jaheon Gu

IPC: H04W36/04 ,  H04L69/16 ,  H04W36/00 ,  H04W36/36 ,  H04W80/06 ,  H04W36/14 ,  H04W36/30

Abstract: Disclosed herein is a method and network handover system for handling a data session in a user equipment (UE). The method comprises initiating a data session of at least one application from a plurality of applications with a first communication interface using a first socket of the UE having a first socket file descriptor (SOCKFD) for the data session, detecting a deterioration in a network connection of the first communication interface, identifying a second communication interface, establishing a second socket having a second SOCKFD associated with the second communication interface and migrating the data session from the first communication interface to the second communication interface by mapping the first SOCKFD corresponding to the first socket to the second SOCKFD corresponding to the second socket.

公开(公告)号：US20240203788A1

公开(公告)日：2024-06-20

申请号：US18541091

申请日：2023-12-15

Applicant: Samsung electronics CO., LTD. ,  Incheon national university research & business foundation

Inventor： Eunhyoung CHO ,  Sunghee Lee ,  Jeongyub Lee ,  Hanboram Lee

IPC: H01L21/768 ,  H01L21/285

CPC classification number: H01L21/76849 ,  H01L21/28562 ,  H01L21/76831 ,  H01L21/76861 ,  H01L21/76879

Abstract: A method of selectively forming a layer according to atomic layer deposition includes providing a substrate which includes a first region consisting of a first material and having a first surface and a second region consisting of a second material and having a second surface, forming a first reaction inhibition layer on the second surface using a reaction inhibitor selectively adsorbed on the second surface, selectively forming a first deposition layer on the first surface using a first precursor and a first reactant, wherein the first reactant reacts with the first precursor to form an atomic layer and does not react with the reaction inhibitor to form the atomic layer, and converting the first reaction inhibition layer on the second surface into a second deposition layer using a second reactant which reacts with the first reaction inhibition layer to form the atomic layer.

公开(公告)号：US20210407099A1

公开(公告)日：2021-12-30

申请号：US17141770

申请日：2021-01-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunghee Lee ,  Kyubaik Chang

IPC: G06T7/155 ,  G06T7/00

Abstract: A method for detecting a defect on a substrate, including receiving a first image, generating a second image, by converting the first image to grayscale levels, calculating a first gray level value, having a maximum number of pixels in the second image, and second and third gray level values, having a number of pixels in the second image equal to a predetermined fraction of the first gray level value, from a histogram of the number of pixels respective to the grayscale levels of the second image, converting the second image into a third image having pixels at a level lower than that of the first gray level value and a fourth image having pixels at a level equal to or higher than the first gray level value, generating fifth and sixth images by detecting edges by applying a Canny algorithm to the third and fourth images, respectively.

公开(公告)号：US09970906B2

公开(公告)日：2018-05-15

申请号：US14734229

申请日：2015-06-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jooho Lee ,  Changseung Lee ,  Jeoyoung Shim ,  Sunghee Lee ,  Woosung Jeon

IPC: G01N29/12 ,  G01N29/24

CPC classification number: G01N29/12 ,  G01N29/2437 ,  G01N2291/0256 ,  G01N2291/2697

Abstract: An apparatus for analyzing an active material of a secondary battery may include: a first electrode; a piezoelectric layer on the first electrode; a second electrode on the piezoelectric layer, configured to provide a voltage having a polarity opposite to a polarity of the first electrode; and/or an insulating layer on the second electrode and including a through hole exposing a portion of the second electrode. A method of analyzing an active material of a secondary battery may include: disposing an active material in a through hole of a bulk acoustic resonator, in which a first electrode, a piezoelectric layer, a second electrode, and an insulating layer are stacked; measuring a resonance frequency of the resonator by applying an electric signal to the first and second electrodes of the resonator; and/or measuring a weight of the active material in the through hole, based on the measured resonance frequency.