公开(公告)号：US20150200332A1

公开(公告)日：2015-07-16

申请号：US14508784

申请日：2014-10-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Hyun LEE ,  Sang Heon HAN ,  Suk Ho YOON ,  Jae Sung HYUN

IPC: H01L33/14 ,  H01L33/60

CPC classification number: H01L33/04 ,  H01L29/15 ,  H01L33/02 ,  H01L33/025 ,  H01L33/06 ,  H01L33/14 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48237 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/8592 ,  H01S5/20 ,  H01S5/34 ,  H01L2924/00014

Abstract: There is provided a semiconductor light emitting device. The device includes an n-type semiconductor layer, and a p-type semiconductor layer. The p-type semiconductor layer includes a plurality of first layers and second layers, each containing a p-type impurity and are alternately stacked. The impurity concentrations of the plurality of first layers increase in a direction away from the n-type semiconductor layer. An active layer is disposed between the n-type semiconductor layer and the p-type semiconductor layer.

Abstract translation: 提供了一种半导体发光器件。 该器件包括n型半导体层和p型半导体层。 p型半导体层包括多个第一层和第二层，每层包含p型杂质并且交替地层叠。 多个第一层的杂质浓度在远离n型半导体层的方向上增加。 在n型半导体层和p型半导体层之间设置有源层。

公开(公告)号：US20140235005A1

公开(公告)日：2014-08-21

申请号：US14106783

申请日：2013-12-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Hyun LEE ,  Ki Sung KIM ,  Bum Joon KIM ,  Tan Sakong ,  Suk Ho YOON ,  Jae Deok JEONG

IPC: H01L33/00 ,  H01L21/02

CPC classification number: H01L21/0254 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/0066

Abstract: A method of producing a p-type nitride semiconductor includes growing a first nitride semiconductor layer doped with a first concentration of a p-type impurity. The first nitride semiconductor layer is annealed to activate the p-type impurity. A second nitride semiconductor layer doped with a second concentration of a p-type impurity is grown on the first nitride semiconductor layer. The second concentration is higher than the first concentration.

Abstract translation: 制造p型氮化物半导体的方法包括生长掺杂有第一浓度的p型杂质的第一氮化物半导体层。 对第一氮化物半导体层进行退火以激活p型杂质。 在第一氮化物半导体层上生长掺杂有第二浓度的p型杂质的第二氮化物半导体层。 第二浓度高于第一浓度。

公开(公告)号：US20130316481A1

公开(公告)日：2013-11-28

申请号：US13846905

申请日：2013-03-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ki Ho PARK ,  Ki Sung KIM ,  Chul Min KIM ,  Suk Ho YOON ,  Tae Hyun LEE

IPC: H01L33/00

CPC classification number: H01L33/0079

Abstract: A method for manufacturing a semiconductor light emitting device is provided. The method includes forming a light emitting structure by sequentially growing a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a semiconductor growth substrate A support unit is disposed on the second conductivity-type semiconductor layer, so as to be combined with the light emitting structure. The semiconductor growth substrate is separated from the light emitting structure. An interface between the semiconductor growth substrate and a remaining light emitting structure is wet-etched such that the light emitting structure remaining on the separated semiconductor growth substrate is separated therefrom. The semiconductor growth substrate is cleaned.

Abstract translation: 提供一种制造半导体发光器件的方法。 该方法包括通过在半导体生长衬底上顺序生长第一导电类型半导体层，有源层和第二导电类型半导体层来形成发光结构。支撑单元设置在第二导电型半导体层上， 以便与发光结构组合。 半导体生长衬底与发光结构分离。 湿式蚀刻半导体生长衬底和剩余的发光结构之间的界面，使得保留在分离的半导体生长衬底上的发光结构与其分离。 清洁半导体生长衬底。

公开(公告)号：US20130244353A1

公开(公告)日：2013-09-19

申请号：US13844569

申请日：2013-03-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Do Young RHEE ,  Tan SAKONG ,  Ki Sung KIM ,  Suk Ho YOON ,  Young Sun KIM ,  Sung Tae KIM

IPC: H01L33/00 ,  H01L33/26

CPC classification number: H01L33/005 ,  H01L33/26

Abstract: Provided a method of manufacturing a semiconductor light emitting device, the method includes forming a light emitting structure by growing a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer on a substrate. The forming of the light emitting structure includes: forming a protective layer after a portion of the light emitting structure is formed forming a sacrificial layer on the protective layer; and continuously forming a further portion of the light emitting structure on the sacrificial layer.

Abstract translation: 提供一种制造半导体发光器件的方法，该方法包括通过在衬底上生长第一导电类型半导体层，有源层和第二导电类型半导体层来形成发光结构。 发光结构的形成包括：在形成发光结构的一部分之后形成保护层，在保护层上形成牺牲层; 并且在牺牲层上连续地形成发光结构的另一部分。

公开(公告)号：US20130099255A1

公开(公告)日：2013-04-25

申请号：US13660947

申请日：2012-10-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Hyun LEE ,  Jung Hyun LEE ,  Ki Sung KIM ,  Suk Ho YOON ,  Young Sun KIM

IPC: H01L33/00

CPC classification number: C23C16/407 ,  C23C16/45578 ,  H01L33/32 ,  H01L33/42 ,  H01L2933/0016

Abstract: There is provided a semiconductor light emitting device having a zinc oxide-based transparent conductive thin film in which a Group III element is doped to have waveforms having a plurality of periods in a thickness direction.

Abstract translation: 提供了一种具有氧化锌基透明导电薄膜的半导体发光器件，其中掺杂了III族元素以具有在厚度方向上具有多个周期的波形。