公开(公告)号：US20210335688A1

公开(公告)日：2021-10-28

申请号：US17035145

申请日：2020-09-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jumyong PARK ,  Solji SONG ,  Jinho AN ,  Jeonggi JIN ,  Jinho CHUN ,  Juil CHOI

IPC: H01L23/31 ,  H01L23/48 ,  H01L23/00 ,  H01L21/768

Abstract: A semiconductor device is disclosed. The semiconductor device includes a via passivation layer disposed on an inactive surface of a substrate, a through-electrode vertically penetrating the substrate and the via passivation layer, a concave portion formed in the top surface of the via passivation layer and disposed adjacent to the through-electrode, and a via protective layer coplanar with the via passivation layer and the through-electrode and to fill the concave portion. In a horizontal cross-sectional view, the via protective layer has a band shape surrounding the through-electrode.