公开(公告)号：US20230407174A1

公开(公告)日：2023-12-21

申请号：US18194875

申请日：2023-04-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyuyoung HWANG ,  Byungjoon KANG ,  Daihyun KIM ,  Hwang Suk KIM ,  Mihyun PARK ,  Jingmin OH ,  Hyosan LEE ,  Byoungki CHOI ,  Ham CHEOL

IPC: C09K13/00 ,  H01L21/311 ,  H01L21/3213

CPC classification number: C09K13/00 ,  H01L21/32134 ,  H01L21/31111

Abstract: Provided are an etching composition including an oxidizing agent, an ammonium salt, an aqueous solvent, and an accelerator, a method of preparing a metal-containing film etching by using the same, and a method of manufacturing a semiconductor device by using the same.

公开(公告)号：US20180096856A1

公开(公告)日：2018-04-05

申请号：US15833184

申请日：2017-12-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyoung Hwan KIM ,  Ingi KIM ,  Mihyun PARK ,  Young-Hoo KIM ,  Ui-soon PARK ,  Jung-Min OH ,  Kuntack LEE ,  Hyosan LEE

IPC: H01L21/311 ,  H01L21/67

CPC classification number: H01L21/31111 ,  H01L21/67086 ,  H01L21/67253 ,  H01L21/67288

Abstract: A substrate treating apparatus and a method of treating a substrate, the apparatus including a substrate treater that treats a substrate using a chemical solution, the chemical solution including a phosphoric acid aqueous solution and a silicon compound; and a chemical solution supplier that supplies the chemical solution to the substrate treating unit, wherein the chemical solution supplier includes a concentration measurer that measures concentrations of the chemical solutions, the concentration measurer including a first concentration measurer that measures a water concentration of the chemical solution; and a second concentration measurer that measures a silicon concentration of the chemical solution.

公开(公告)号：US20230272278A1

公开(公告)日：2023-08-31

申请号：US18081899

申请日：2022-12-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changjun PARK ,  Jaesung LEE ,  Junghun LIM ,  Mihyun PARK ,  Sangwon BAE ,  Jungmin OH ,  Hyosan LEE

IPC: C09K13/06 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/3205

CPC classification number: C09K13/06 ,  H01L21/32134 ,  H01L21/76883 ,  H01L21/32051

Abstract: An etching composition for etching a molybdenum film, the etching composition includes about 0.1 wt % to about 5 wt % of an oxidant; about 10 wt % to about 40 wt % of a chelate agent, the chelate agent including a mineral acid; about 0.01 wt % to about 3 wt % of a corrosion inhibitor, the corrosion inhibitor including an ammonium salt, an amine compound, or a combination thereof; and an organic solvent, all wt % being based on a total weight of the etching composition.