公开(公告)号：US11284028B2

公开(公告)日：2022-03-22

申请号：US16950122

申请日：2020-11-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae-Yon Lee ,  Gwi-Deok Ryan Lee ,  Masaru Ishii ,  Dong-Mo Im

IPC: H04N5/369 ,  H01L27/30 ,  G06K9/20 ,  H01L27/146 ,  G06K9/00 ,  H01L27/28 ,  H04N9/04 ,  H04N5/33

Abstract: An image sensor includes a first sensor pixel and a second sensor pixel that vertically overlap each other. The first sensor pixel includes a first signal generation circuit, and a first photoelectric converter that is connected to the first signal generation circuit and configured to generate first information from light having a first wavelength. The second sensor pixel includes a second signal generation circuit, and a second photoelectric converter that is connected to the second signal generation circuit and configured to generate second information from light having a second wavelength. A first horizontal surface area of the first photoelectric converter is different from a second horizontal surface area of the second photoelectric converter. An image sensor module includes the image sensor, a light source configured to emit light to a target object, and a dual band pass filter configured to selectively pass light reflected from the target object.

公开(公告)号：US20200227452A1

公开(公告)日：2020-07-16

申请号：US16458229

申请日：2019-07-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Masaru Ishii ,  Tae-hyoung Kim ,  Min-ho Jang ,  In-sung Joe

IPC: H01L27/146

Abstract: An image sensor includes a semiconductor substrate having opposite first and second surfaces, a wiring structure on the first surface of the semiconductor substrate, and a refractive structure on the second surface of the semiconductor substrate. The refractive structure includes a first anti-reflective layer on the second surface of the semiconductor substrate, a refractive pattern on the first anti-reflective layer, an insulation layer on the first anti-reflective layer, and a second anti-reflective layer on the refractive pattern and the insulation layer. The refractive pattern includes first refractive parts spaced apart from each other in a first direction parallel to the second surface of the semiconductor substrate, and the insulation layer fills spaces between the first refractive parts.

公开(公告)号：US10529755B2

公开(公告)日：2020-01-07

申请号：US15704690

申请日：2017-09-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Yon Lee ,  Gwi Deok Lee ,  Masaru Ishii ,  Young Gu Jin

IPC: H01L27/146 ,  H01L27/148 ,  H04N5/3745 ,  H04N5/361 ,  H04N5/378 ,  H04N5/369

Abstract: An image sensor includes a first photoelectric conversion layer that is configured to convert light to a first signal. The image sensor also includes a transfer transistor. The transfer transistor includes a storage node region which stores the first signal. The transfer transistor also includes a transfer gate which transfers the stored first signal, and a floating diffusion region that receives the first signal. The image sensor includes a reset transistor that resets the floating diffusion region, and a drive transistor which receives a pixel voltage. The drive transistor generates an output voltage. The image sensor also includes a selection transistor which outputs the output voltage. A reset drain voltage is applied to a drain electrode of the reset transistor, and is independent of the pixel voltage. The reset drain voltage ranges from about 0.1V to about 1.0V.

公开(公告)号：US20170294487A1

公开(公告)日：2017-10-12

申请号：US15630571

申请日：2017-06-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： MYUNG WON LEE ,  Sang Chul Sul ,  Hirosige Goto ,  Sae Young Kim ,  Gwi Deok Ryan Lee ,  Masaru Ishii ,  Kyo Jin Choo

IPC: H01L27/30 ,  H01L51/44

CPC classification number: H01L27/307 ,  H01L51/442 ,  H04N5/23229 ,  H04N5/3765 ,  H04N5/378 ,  H04N9/045

Abstract: An image sensor comprising: a first layer having a plurality of groups of photodiodes formed in a semiconductor substrate, each group representing a 2×2 array of photodiodes, with 2 first pixels configured to detect light of a first wavelength and 2 second pixels configured to detect light of a second wavelength, each first pixel positioned adjacent to the second pixels; and a second layer overlapping the first layer, the second layer is organic, having a plurality of organic photodiodes configured to detect light of a third wavelength, each organic photodiode positioned to partially overlap 2 first photodiodes and 2 second photodiodes of the first layer.

公开(公告)号：US09780130B2

公开(公告)日：2017-10-03

申请号：US14744802

申请日：2015-06-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Dong Suh ,  Masaru Ishii ,  Sung Young Yun ,  Sang Chul Sul ,  Yong Wan Jin

IPC: H01L27/146 ,  H01L27/30

CPC classification number: H01L27/14621 ,  H01L27/14609 ,  H01L27/1462 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14665 ,  H01L27/307

Abstract: An image sensor is provided. The image sensor includes a first photoelectric conversion element and a second photoelectric conversion element, which are formed in a semiconductor substrate; a red color filter formed on the first photoelectric conversion element; a cyan color filter formed on the second photoelectric conversion element; and an organic photoelectric conversion layer formed on the red color filter and the cyan color filter, the organic photoelectric conversion layer configured to absorb wavelengths in a green range.

公开(公告)号：US09761636B2

公开(公告)日：2017-09-12

申请号：US14732129

申请日：2015-06-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae-Yon Lee ,  Masaru Ishii

IPC: H01L29/04 ,  H01L29/10 ,  H01L31/00 ,  H01L27/30

CPC classification number: H01L27/307

Abstract: The inventive concepts relate to image sensors. The image sensor includes a substrate including a floating diffusion region and a pixel circuit, an interlayer insulating layer on the substrate, a contact node and a first electrode on the interlayer insulating layer, a dielectric layer on a top surface of the first electrode, a channel semiconductor pattern on the dielectric layer and connected to the contact node, and a photoelectric conversion layer on the channel semiconductor pattern. The channel semiconductor pattern includes a semiconductor material having an electron mobility that is higher than an electron mobility of the photoelectric conversion layer.