公开(公告)号：US11081338B2

公开(公告)日：2021-08-03

申请号：US16791189

申请日：2020-02-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Younsoo Kim ,  Haeryong Kim ,  Seungmin Ryu ,  Sunmin Moon ,  Jeonggyu Song ,  Changsu Woo ,  Kyooho Jung ,  Younjoung Cho

IPC: H01L21/02

Abstract: A method of forming an oxide film including two non-oxygen elements includes providing a first source material on a substrate, the first source material including a first central element, providing an electron donor compound to be bonded to the first source material, providing a second source material on the substrate after the providing of the electron donor compound, the second source material including a second central element, and providing an oxidant on the substrate.

公开(公告)号：US20240387612A1

公开(公告)日：2024-11-21

申请号：US18633456

申请日：2024-04-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyooho Jung ,  Jongyeong Min ,  Joonsuk Park ,  Jiye Baek ,  Yeseul Lee ,  Jinwook Lee

IPC: H10B12/00 ,  C23C16/34

Abstract: A semiconductor device may include a substrate and a capacitor on the substrate. The capacitor may include a lower electrode, a dielectric layer on the lower electrode, a first upper electrode on the dielectric layer, and a second upper electrode on the first upper electrode. The dielectric layer may include a metal oxide. The first upper electrode may include a metal nitride further including a first material having a work function of 4.8 eV or more. The second upper electrode may include the first material.

公开(公告)号：US12063772B2

公开(公告)日：2024-08-13

申请号：US18215301

申请日：2023-06-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyooho Jung ,  Yukyung Shin ,  Jinho Lee

IPC: H10B12/00

CPC classification number: H10B12/315 ,  H10B12/033

Abstract: A semiconductor device including a substrate; bottom electrodes on the substrate, each bottom electrode including a first region and a second region, the second region containing an additional element relative to the first region; a first supporting pattern on the substrate and in contact with a portion of a side surface of each bottom electrode; a top electrode on the bottom electrodes; a dielectric layer between the bottom electrodes and the top electrode; and a capping layer between the bottom electrodes and the dielectric layer, the capping layer covering a top surface and a bottom surface of the first supporting pattern, wherein the second region is in contact with the capping layer, and the capping layer and the dielectric layer include different materials from each other.

公开(公告)号：US11658024B2

公开(公告)日：2023-05-23

申请号：US17071310

申请日：2020-10-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonggyu Song ,  Kyooho Jung ,  Yongsung Kim ,  Jeongil Bang ,  Jooho Lee ,  Junghwa Kim ,  Haeryong Kim ,  Myoungho Jeong

IPC: H01L21/02 ,  H01L29/786 ,  H01L29/66 ,  H01L21/768

CPC classification number: H01L21/02181 ,  H01L21/0245 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/02403 ,  H01L21/02472 ,  H01L21/02667 ,  H01L21/76871 ,  H01L29/66969 ,  H01L29/7869

Abstract: A semiconductor device and a method of manufacturing the semiconductor device are included. The method of manufacturing the semiconductor device includes forming a hafnium oxide layer on a substrate and crystallizing the hafnium oxide layer by using a hafnium cobalt oxide layer as a seed layer. According to the method of manufacturing the semiconductor device, a thin-film hafnium oxide layer may be easily crystallized.

公开(公告)号：US11424317B2

公开(公告)日：2022-08-23

申请号：US16839641

申请日：2020-04-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonggyu Song ,  Kyooho Jung ,  Younsoo Kim ,  Haeryong Kim ,  Jooho Lee

IPC: H01L27/108 ,  H01L49/02 ,  H01L21/285

Abstract: A capacitor includes: a lower electrode including a metal nitride represented by MM′N, wherein M is a metal element, M′ is an element different from M, and N is nitrogen; a dielectric layer on the lower electrode; an interfacial layer between the lower electrode and the dielectric layer and including a metal nitrate represented by MM′ON, wherein M is a metal element, M′ is an element different from M, N is nitrogen, and O is oxygen; and an upper electrode on the dielectric layer.

公开(公告)号：US20210384197A1

公开(公告)日：2021-12-09

申请号：US17407836

申请日：2021-08-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyooho Jung ,  Jeong-Gyu Song ,  Younsoo Kim ,  Jooho Lee

IPC: H01L27/108 ,  H01L49/02 ,  H01L21/02

Abstract: Disclosed are semiconductor memory devices and methods of fabricating the same. The semiconductor memory devices may include a capacitor including first and second electrodes and a dielectric layer. The dielectric layer may include a zirconium aluminum oxide layer including a first zirconium region adjacent to the first electrode, a first aluminum region, a second aluminum region adjacent to the second electrode, and a second zirconium region between the first and second aluminum regions. The first and second zirconium regions may include zirconium and oxygen and may be devoid of aluminum. The first and second aluminum regions may include aluminum and oxygen and may be devoid of zirconium. The first aluminum region and the first zirconium region may be spaced apart by a first distance, and the first aluminum region and the second zirconium region may be spaced apart by a second distance shorter than the first distance.

公开(公告)号：US10854709B2

公开(公告)日：2020-12-01

申请号：US16392097

申请日：2019-04-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyooho Jung ,  Sangyeol Kang ,  Kyuho Cho ,  Eunsun Kim ,  Hyosik Mun

IPC: H01L21/02 ,  H01L49/02

Abstract: A method of manufacturing a semiconductor device includes forming a first electrode, forming a preliminary dielectric layer on the first electrode, forming a second electrode on the preliminary dielectric layer, and at least partially phase-changing the preliminary dielectric layer to form a dielectric layer. An interfacial energy between the first electrode and the dielectric layer may be less than an interfacial energy between the first electrode and the preliminary dielectric layer.

公开(公告)号：US20240387608A1

公开(公告)日：2024-11-21

申请号：US18444322

申请日：2024-02-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyooho Jung ,  Jongyeong Min ,  Jiye Baek ,  Joonsuk Park ,  Yeseul Lee ,  Jinwook Lee

IPC: H01L27/08

Abstract: A capacitor may include a primary lower electrode, an interface structure on a surface of the primary lower electrode, a primary dielectric layer including a metal oxide on the interface structure, the primary dielectric layer, and an upper electrode on the primary dielectric layer. The interface structure may include a first interface layer, a second interface layer, and a third interface layer. The first interface layer may have electrical conductivity, and may include a metal oxide doped with a pentavalent element. The second interface layer may be on the first interface layer, and may include a material further doped with nitrogen in the material of the first interface layer. The third interface layer may be on the second interface layer, and may include a metal oxide doped with nitrogen. A metal included in the metal oxide of the third interface layer may include a tetravalent metal.

公开(公告)号：US12082395B2

公开(公告)日：2024-09-03

申请号：US17407836

申请日：2021-08-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyooho Jung ,  Jeong-Gyu Song ,  Younsoo Kim ,  Jooho Lee

IPC: H01L21/02 ,  H01L49/02 ,  H10B12/00

CPC classification number: H10B12/033 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L28/75 ,  H01L28/91 ,  H10B12/315

Abstract: Disclosed are semiconductor memory devices and methods of fabricating the same. The semiconductor memory devices may include a capacitor including first and second electrodes and a dielectric layer. The dielectric layer may include a zirconium aluminum oxide layer including a first zirconium region adjacent to the first electrode, a first aluminum region, a second aluminum region adjacent to the second electrode, and a second zirconium region between the first and second aluminum regions. The first and second zirconium regions may include zirconium and oxygen and may be devoid of aluminum. The first and second aluminum regions may include aluminum and oxygen and may be devoid of zirconium. The first aluminum region and the first zirconium region may be spaced apart by a first distance, and the first aluminum region and the second zirconium region may be spaced apart by a second distance shorter than the first distance.

公开(公告)号：US20240164085A1

公开(公告)日：2024-05-16

申请号：US18416313

申请日：2024-01-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyooho Jung ,  Dongkwan Baek ,  Cheoljin Cho

IPC: H10B12/00

CPC classification number: H10B12/315 ,  H10B12/033 ,  H10B12/34

Abstract: A capacitor may include a lower electrode, a dielectric layer structure on the lower electrode, and an upper electrode on the dielectric layer structure. The dielectric layer structure may include a plurality of dielectric layers and at least one insert layer structure between ones of the plurality of dielectric layers. The insert layer structure may include a plurality of zirconium oxide layers and at least one insert layer. The insert layer may be between ones of the plurality of zirconium oxide layers. The capacitor may have a high capacitance and low leakage currents.