公开(公告)号：US11063090B2

公开(公告)日：2021-07-13

申请号：US16391616

申请日：2019-04-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min Jun Choi ,  Kwan Sik Kim ,  Chang Hwa Kim ,  Sang Su Park ,  Man Geun Cho

IPC: H01L27/30 ,  H04N5/378 ,  H01L49/02 ,  H01L27/146

Abstract: An image sensor and a method for fabricating the same are provided. The image sensor includes a substrate including a first surface opposite a second surface that is incident to light, a first photoelectric conversion layer in the substrate, a wiring structure including a plurality of wiring layers on the first surface of the substrate, an interlayer insulating film on the second surface of the substrate, a capacitor structure in the interlayer insulating film, and a first wiring on the interlayer insulating film. The capacitor structure includes a first conductive pattern, a dielectric pattern, and a second conductive pattern sequentially stacked on the second surface of the substrate. The second conductive pattern is connected to the first wiring.

公开(公告)号：US10741607B2

公开(公告)日：2020-08-11

申请号：US15968954

申请日：2018-05-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Hyun Yoon ,  Doo Won Kwon ,  Kwan Sik Kim ,  In Gyu Baek ,  Tae Young Song

IPC: H01L27/32 ,  H01L27/146 ,  H01L21/56 ,  H01L21/683 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L31/18 ,  H01L23/00

Abstract: A method of manufacturing an image sensing apparatus includes: forming a first substrate structure including a first region of a pixel region, the first substrate structure having a first surface and a second surface; forming a second substrate structure including a circuit region for driving the pixel region, the second substrate structure having a third surface and a fourth surface; bonding the first substrate structure to the second substrate structure, such that the first surface is connected to the third surface; forming a second region of the pixel region on the second surface; forming a first connection via, the first connection via extending from the second surface to pass through the first substrate structure; mounting semiconductor chips on the fourth surface, using a conductive bump; and separating a stack structure of the first substrate structure, the second substrate structure, and the semiconductor chips into unit image sensing apparatuses.