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公开(公告)号:US20230019156A1
公开(公告)日:2023-01-19
申请号:US17735599
申请日:2022-05-03
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kwangseok KIM , Seonggeon PARK , Kiwoong KIM , Naoki HASE
Abstract: Provided are a magnetic tunneling junction device having a fast operating speed without reducing or with increasing data retention and/or a memory device including the magnetic tunneling junction device. The magnetic tunneling junction device includes a free layer having a first surface and a second surface opposite the first surface; a pinned layer facing the first surface of the free layer; a first oxide layer between the pinned layer and the free layer; and a second oxide layer on the second surface of the free layer. The free layer includes a first free layer adjacent to the first oxide layer and a second free layer adjacent to the second oxide layer. The first free layer includes a magnetic material not doped with a non-magnetic metal, and the second free layer includes a magnetic material doped with the non-magnetic metal.
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公开(公告)号:US20220317739A1
公开(公告)日:2022-10-06
申请号:US17711619
申请日:2022-04-01
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kiwoong KIM , Haekwon LEE
Abstract: According to various embodiments of the disclosure, an electronic device may comprise a first structure, a second structure receiving at least a portion of the first structure and guiding a sliding movement of the first structure, a flexible display including a first area connected with the first structure and a second area extending from the first area and bendable, and a sweeper member formed to slide along an inside of the second structure while being attached to an end of the second area of the flexible display, in response to the sliding movement of the flexible display.
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