公开(公告)号：US20240243554A1

公开(公告)日：2024-07-18

申请号：US18376661

申请日：2023-10-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eunsung LEE ,  Junhee Choi ,  Kiho Kong ,  Joohun Han

IPC: H01S5/323 ,  H01S5/028 ,  H01S5/40

CPC classification number: H01S5/323 ,  H01S5/0282 ,  H01S5/4087

Abstract: Provided is a light source including a plurality of support layers spaced apart from each other, an ionic crystalline layer on each of the plurality of support layers, a two-dimensional (2D) material layer on the ionic crystalline layer, and a light-emitting device including a first clad layer on the 2D material layer, a width of the first clad layer being greater than a width of the 2D material layer in a horizontal direction, an active layer on the first clad layer, and a second clad layer on the active layer and doped as a second conductive type electrically opposite to a first conductive type.

公开(公告)号：US20240154000A1

公开(公告)日：2024-05-09

申请号：US18417984

申请日：2024-01-19

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  iBeam Materials, Inc.

Inventor： Junhee CHOI ,  Joohun Han ,  Vladimir Matias

IPC: H01L29/16 ,  H01L21/02 ,  H01L29/04

CPC classification number: H01L29/1604 ,  H01L21/02428 ,  H01L21/02488 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/0259 ,  H01L21/02617 ,  H01L29/04

Abstract: A single crystal semiconductor structure includes: an amorphous substrate; a single crystal semiconductor layer provided on the amorphous substrate; and a thin orienting film provided between the amorphous substrate and the single crystal semiconductor layer, wherein the thin orienting film is a single crystal thin film, and the thin orienting film has a non-zero thickness that is equal to or less than 10 times a critical thickness hc.

公开(公告)号：US20240113264A1

公开(公告)日：2024-04-04

申请号：US18375194

申请日：2023-09-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee Choi ,  Kiho Kong ,  Joosung Kim ,  Eunsung Lee ,  Joohun Han

IPC: H01L33/50 ,  H01L25/16

CPC classification number: H01L33/502 ,  H01L25/167 ,  H01L2933/0041

Abstract: A light emitting device includes a light emitting rod in which a porous first type semiconductor layer, an active layer, and a second type semiconductor layer are sequentially arranged, and a wavelength conversion cluster is embedded in the porous first type semiconductor layer and configured to convert a first light generated in the active layer into a second light having a different wavelength.

公开(公告)号：US11777056B2

公开(公告)日：2023-10-03

申请号：US17112346

申请日：2020-12-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee Choi ,  Nakhyun Kim ,  Jinjoo Park ,  Joohun Han

IPC: H01L33/06 ,  H01L33/24 ,  H01L27/15 ,  H01L33/00 ,  H01L33/14 ,  H01L33/30 ,  H01L33/40

CPC classification number: H01L33/24 ,  H01L27/156 ,  H01L33/0025 ,  H01L33/0062 ,  H01L33/06 ,  H01L33/145 ,  H01L33/30 ,  H01L33/40

Abstract: Provided is a nanorod light-emitting device including a first semiconductor layer doped with a first conductive type impurity, an emission layer disposed above the first semiconductor layer, a second semiconductor layer disposed above the emission layer and doped with a second conductive type impurity that is electrically opposite to the first conductive type impurity, a conductive layer disposed between at least one of a center portion of a lower surface of the emission layer and the first semiconductor layer and a center portion of an upper surface of the emission layer and the second semiconductor layer, and a current blocking layer surrounding a sidewall of the conductive layer.

公开(公告)号：US11699775B2

公开(公告)日：2023-07-11

申请号：US17138071

申请日：2020-12-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee Choi ,  Nakhyun Kim ,  Jinjoo Park ,  Joohun Han

IPC: H01L33/24 ,  H01L25/075 ,  H01L33/32 ,  H01L33/00

CPC classification number: H01L33/24 ,  H01L25/0753 ,  H01L33/32 ,  H01L33/0075

Abstract: A semiconductor light emitting diode (LED) and a method of manufacturing the same are provided. The LED includes a first semiconductor layer; a plurality of active elements spaced apart on the first semiconductor layer and each having a width less than a width of the first semiconductor layer; and a second semiconductor layer disposed on the plurality of active elements.

公开(公告)号：US11450710B2

公开(公告)日：2022-09-20

申请号：US17191619

申请日：2021-03-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungwook Hwang ,  Hoyoung Ahn ,  Junhee Choi ,  Kiho Kong ,  Joohun Han

IPC: H01L27/15 ,  H01L33/40 ,  H01L33/58 ,  H01L33/46 ,  H01L33/50 ,  H01L33/42

Abstract: A display device includes a substrate, an emissive layer; a plurality of color converting layers that share the emissive layer, a barrier arranged on the emissive layer between the plurality of color converting layers, a first insulating layer provided between the plurality of color converting layers and the emissive layer and a second insulating layer provided between the first insulating layer and the plurality of color converting layers. The barrier spatially separates the plurality of color converting layers from each other and the first insulating layer has a plurality of first openings respectively corresponding to the plurality of color converting layers.

公开(公告)号：US10784309B2

公开(公告)日：2020-09-22

申请号：US16183953

申请日：2018-11-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungwook Hwang ,  Junhee Choi ,  Junghun Park ,  Joohun Han

IPC: H01L27/15 ,  H01L27/12 ,  H01L33/42 ,  H01L33/06 ,  H01L33/50 ,  H01L33/32 ,  H01L25/075 ,  H01L33/20 ,  H01L33/14 ,  H01L33/46 ,  H01L33/58 ,  H01L33/38

Abstract: A display device is provided. The display device includes a substrate, an emission layer configured to emit light, the emission layer including a first semiconductor layer provided on the substrate, an active layer provided on the first semiconductor layer, and a second semiconductor layer provided on the active layer, and a plurality of color converting layers provided on the emission layer and configured to emit light of certain colors from light emitted from the emission layer.

公开(公告)号：US12087853B2

公开(公告)日：2024-09-10

申请号：US17982164

申请日：2022-11-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinjoo Park ,  Junhee Choi ,  Kiho Kong ,  Joohun Han ,  Nakhyun Kim ,  Junghun Park

IPC: H01L27/12 ,  H01L27/15 ,  H01L29/66 ,  H01L29/778

CPC classification number: H01L29/7786 ,  H01L27/1214 ,  H01L27/156 ,  H01L29/66462 ,  H01L29/778 ,  H01L27/15

Abstract: A semiconductor device includes a substrate including a first region and a second region adjacent to the first region, the first and the second regions being disposed in a first direction parallel to an upper surface of the substrate; an etch-stop layer disposed on the first region and the second region; a separation layer disposed on an upper portion of the etch-stop layer, the separation layer being disposed on the first region; a high-electron-mobility transistor (HEMT) element disposed on an upper portion of the separation layer in a second direction perpendicular to an upper surface of the substrate; a light-emitting element disposed on the second region between the substrate and the etch-stop layer; and a plurality of first insulating patterns covering side surfaces of the HEMT element, the plurality of first insulating patterns extending to the etch-stop layer.

公开(公告)号：US11870008B2

公开(公告)日：2024-01-09

申请号：US17227538

申请日：2021-04-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinjoo Park ,  Junhee Choi ,  Nakhyun Kim ,  Dongho Kim ,  Joohun Han

IPC: H01L33/14 ,  H01L33/04 ,  H01L33/00 ,  H01L27/15 ,  H01L33/56

CPC classification number: H01L33/145 ,  H01L27/156 ,  H01L33/005 ,  H01L33/04 ,  H01L33/56

Abstract: A nanorod light-emitting device is provided. The nanorod light-emitting device includes a first semiconductor layer, a light-emitting layer on the first semiconductor layer, a second semiconductor layer disposed on the light-emitting layer, at least one conductive layer disposed between a central portion of a lower surface of the light-emitting layer and the first semiconductor layer, or between a central portion of an upper surface of the light-emitting layer and the second semiconductor layer, at least one current blocking layer that surrounds a side surface of the at least one conductive layer, and an insulating film that surrounds a side surface of the second semiconductor layer, a side surface of the light-emitting layer, and a side surface of the at least one current blocking layer.

公开(公告)号：US20230402569A1

公开(公告)日：2023-12-14

申请号：US18238390

申请日：2023-08-25

Applicant: Samsung Electronics Co., LTD.

Inventor： Junhee CHOI ,  Nakhyun Kim ,  Jinjoo Park ,  Joohun Han

IPC: H01L33/24 ,  H01L27/15 ,  H01L33/00 ,  H01L33/06 ,  H01L33/14 ,  H01L33/30 ,  H01L33/40

CPC classification number: H01L33/24 ,  H01L27/156 ,  H01L33/0025 ,  H01L33/0062 ,  H01L33/06 ,  H01L33/145 ,  H01L33/30 ,  H01L33/40

Abstract: Provided is a nanorod light-emitting device including a first semiconductor layer doped with a first conductive type impurity, an emission layer disposed above the first semiconductor layer, a second semiconductor layer disposed above the emission layer and doped with a second conductive type impurity that is electrically opposite to the first conductive type impurity, a conductive layer disposed between at least one of a center portion of a lower surface of the emission layer and the first semiconductor layer and a center portion of an upper surface of the emission layer and the second semiconductor layer, and a current blocking layer surrounding a sidewall of the conductive layer.