公开(公告)号：US20170287909A1

公开(公告)日：2017-10-05

申请号：US15372840

申请日：2016-12-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： In Wook OH ,  Jae Seok YANG ,  Jong Hyun LEE ,  Hyun Jae LEE ,  Sung Wook HWANG

IPC: H01L27/088 ,  G06F17/50 ,  H01L23/528 ,  H01L27/02

CPC classification number: H01L27/0886 ,  G06F17/5072 ,  H01L23/528 ,  H01L27/0207

Abstract: A semiconductor device includes circuit active fin lines and circuit gate lines intersecting each other in a circuit active region, dummy active fin lines and dummy gate lines intersecting each other in a dummy active region, the active fin lines and the dummy active fin lines having same width and pitch, and the circuit gate lines and the dummy gate lines having same width and pitch, wherein at least some of the dummy active fin lines are aligned with and collinear with respective circuit active fin lines, and at least some of the dummy gate lines are aligned with and collinear with respective circuit gate lines.

公开(公告)号：US20160043858A1

公开(公告)日：2016-02-11

申请号：US14822439

申请日：2015-08-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong Hyun LEE

IPC: H04L5/14 ,  H03F1/30 ,  H03F3/19 ,  H03F1/02

CPC classification number: H04L5/14 ,  H03F1/0205 ,  H03F1/0261 ,  H03F1/30 ,  H03F3/189 ,  H03F3/19 ,  H03F3/24 ,  H03F2200/18 ,  H03F2200/294 ,  H03F2200/408 ,  H03F2200/451 ,  H03F2200/468 ,  H04W88/06

Abstract: An amplifier and an amplifying method are provided. The amplifier includes: an amplifying unit amplifying and transferring a transmission target signal to a TDD switch; the TDD switch transferring a signal received from the amplifying unit to a filter unit when the amplifier operates in a TDD mode, and transferring a signal received from the filter unit to a duplex mode selection switch; the duplex mode selection switch transferring a signal received from the filter unit to a receiving side; and a controller controlling the duplex mode selection switch to transfer the signal received from the filter unit to the receiving side without passing through the TDD switch when the received duplex mode selection signal is a FDD mode selection signal.

公开(公告)号：US20160043279A1

公开(公告)日：2016-02-11

申请号：US14661950

申请日：2015-03-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jai Won JEAN ,  Min Hwan KIM ,  Eun Deok SIM ,  Jong Hyun LEE ,  Heon Ho LEE ,  Ho Chul LEE ,  Jae Sung HYUN

IPC: H01L33/32 ,  H01L33/02 ,  H01L33/46 ,  H01L33/14 ,  H01L33/50 ,  H01L33/24 ,  H01L33/00 ,  H01L33/06

CPC classification number: H01L33/325 ,  B82Y20/00 ,  H01L33/0025 ,  H01L33/025 ,  H01L33/06 ,  H01L33/14 ,  H01L33/24 ,  H01L33/46 ,  H01L33/502 ,  Y10S977/95

Abstract: A semiconductor light emitting device includes an n-type semiconductor layer, a border layer disposed on the n-type semiconductor layer, having band gap energy decreasing in a single direction, and represented by an empirical formula AlxInyGa1−x−yN (0≦x≦0.1, 0.01≦y≦0.1), an active layer disposed on the border layer and having a structure in which one or more InGaN layers and one or more GaN layers are alternately stacked, and a p-type semiconductor layer.

Abstract translation: 半导体发光器件包括n型半导体层，设置在n型半导体层上的边界层，其带隙能量在单个方向上减小，并且由经验公式AlxInyGa1-x-yN（0＆n1E; x＆ ; 0.1,0.01＆amp; nlE; y＆nlE; 0.1），设置在边界层上并具有一个或多个InGaN层和一个或多个GaN层交替堆叠的结构的有源层和p型半导体层。