公开(公告)号：US09988472B2

公开(公告)日：2018-06-05

申请号：US15239424

申请日：2016-08-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun Kyung Lee ,  Jiyoung Jung ,  Jeong Il Park ,  Ajeong Choi

IPC: C08F130/08 ,  C09D183/10 ,  H01B3/46 ,  H01L51/05 ,  H01G4/14 ,  C08G83/00 ,  C08G77/14 ,  C08G77/20 ,  C08G77/442 ,  H01L51/00

CPC classification number: C08F130/08 ,  C08G77/14 ,  C08G77/20 ,  C08G77/442 ,  C08G83/001 ,  C09D183/10 ,  H01B3/46 ,  H01G4/14 ,  H01L51/004 ,  H01L51/0074 ,  H01L51/0094 ,  H01L51/0537

Abstract: A composition includes a product of a condensation reaction between a thermal cross-linking agent and a product of hydrolysis and condensation polymerization of a compound represented by Chemical Formula 1: In Chemical Formula 1, the definitions of the substituents are the same as in the detailed description. Further, an electronic device and a thin film transistor include a cured material of the composition.

公开(公告)号：US09779198B2

公开(公告)日：2017-10-03

申请号：US14832307

申请日：2015-08-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Daekwon Kang ,  Donggyun Kim ,  Jaeseok Yang ,  Jiyoung Jung ,  Chunghee Kim ,  Ha-Young Kim ,  Sungkeun Park ,  Younggook Park ,  Myungsoo Jang ,  Jintae Kim

IPC: G06F17/50 ,  G03F1/70

CPC classification number: G06F17/5072 ,  G03F1/36 ,  G03F1/70 ,  G06F17/5068 ,  G06F17/5081

Abstract: A method can include separating a design area of a substrate for a semiconductor integrated circuit (IC) into cell blocks, where a distance between adjacent ones of the cell blocks can be greater than or equal to a minimum distance defined by a design rule for the semiconductor integrated circuit to provide separated cell blocks, designing a layout for the semiconductor IC in the separated cell blocks, and individually coloring the layout of each of the separated cell blocks.

公开(公告)号：US11139440B2

公开(公告)日：2021-10-05

申请号：US16747901

申请日：2020-01-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joo Young Kim ,  Byong Gwon Song ,  Jeong Il Park ,  Jiyoung Jung

IPC: H01L51/05 ,  G02F1/1368 ,  H01L27/28 ,  H01L51/00

Abstract: Disclosed are a thin film transistor including a source electrode and a drain electrode facing each other, a channel region between the source electrode and the drain electrode, and a gate electrode overlapped with the channel region, wherein the channel region includes a plurality of semiconductor stripes extending in a direction from the source electrode to the drain electrode, a method of manufacturing the same, a thin film transistor array panel, and an electronic device.

公开(公告)号：US10784401B2

公开(公告)日：2020-09-22

申请号：US16108296

申请日：2018-08-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun Kyung Lee ,  Jiyoung Jung ,  Jeong Il Park

IPC: H01L33/06 ,  H01L33/36 ,  H01L33/50 ,  H01L33/58

Abstract: A light emitting composite includes a light emitting element and a three dimensional protection structure bound to the light emitting element and surrounding the light emitting element. The three dimensional protection structure includes a SiO3/2 moiety and a polymerizable functional group. A light emitting structure, an optical sheet, and an electronic device are also disclosed.

公开(公告)号：US10358578B2

公开(公告)日：2019-07-23

申请号：US14919116

申请日：2015-10-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun Kyung Lee ,  Jiyoung Jung ,  Youngjun Yun ,  Jeong II Park ,  Ajeong Choi

IPC: H01L29/08 ,  C09D183/06 ,  H01L51/05 ,  H01L51/00 ,  C09D11/101 ,  C09D11/102

Abstract: An insulating ink includes a nanoparticle bonded with a substituent having a polymerizable functional group, at least one of an organosilane compound and polyorganosiloxane, and a solvent.

公开(公告)号：US20180123064A1

公开(公告)日：2018-05-03

申请号：US15784733

申请日：2017-10-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ajeong Choi ,  Joo Young Kim ,  Youngjun Yun ,  Yong-Uk Lee ,  Jiyoung Jung

IPC: H01L51/05 ,  H01L51/00

CPC classification number: H01L51/0533 ,  H01L51/0002 ,  H01L51/0004 ,  H01L51/0545

Abstract: A method of manufacturing an organic thin film transistor includes forming a gate insulating layer on a gate electrode, forming a mold on the gate insulating layer, the mold including a void, forming a self-assembled layer from a self-assembled layer precursor in the void of the mold, removing the mold, and forming an organic semiconductor on the gate insulating layer.

公开(公告)号：US09923159B2

公开(公告)日：2018-03-20

申请号：US15131165

申请日：2016-04-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joo Young Kim ,  Jiyoung Jung ,  Jeong Il Park ,  Woo Young Yang ,  Youngjun Yun ,  Eun Kyung Lee ,  Ajeong Choi

IPC: H01L51/00 ,  H01L51/05

CPC classification number: H01L51/0533 ,  H01L51/0003 ,  H01L51/0005 ,  H01L51/0011 ,  H01L51/0074

Abstract: A thin film transistor includes a gate electrode, a semiconductor overlapping the gate electrode, a gate insulator between the gate electrode and the semiconductor, and a source electrode and a drain electrode electrically connected to the semiconductor, wherein the gate insulator includes an inorganic insulation layer facing the gate electrode and an organic insulation layer facing the semiconductor. A method of manufacturing the thin film transistor and an electronic device including the thin film transistor are provided.