公开(公告)号：US10371969B2

公开(公告)日：2019-08-06

申请号：US15671369

申请日：2017-08-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun Joo Jang ,  Chil Hee Chung ,  Tae Hyung Kim ,  Jihyun Min ,  Hyo Sook Jang ,  Dae Young Chung

IPC: H01L51/50 ,  G02F1/017 ,  G02F2/02 ,  C09K11/00 ,  C09K11/70 ,  H05B33/14 ,  B82Y20/00 ,  G02F1/355

Abstract: An electronic device includes: an anode and a cathode facing each other; a quantum dot emission layer disposed between the anode and the cathode and including a plurality of quantum dots; and a light emitting source, wherein the quantum dot emission layer is configured to receive electrical energy from the anode and the cathode and to emit light having a first wavelength, wherein the quantum dot emission layer and the light emitting source are configured so that the light emitting source provides the quantum emission layer with light having a second wavelength, and the plurality of quantum dots are excited by the light having the second wavelength and emit light having a third wavelength, wherein the anode, the cathode, or a combination thereof is a light transmitting electrode, and the light of the first wavelength and the light of the third wavelength are emitted through the light transmitting electrode.

公开(公告)号：US11845888B2

公开(公告)日：2023-12-19

申请号：US17989035

申请日：2022-11-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yuho Won ,  Nayoun Won ,  Sungwoo Hwang ,  Eun Joo Jang ,  Soo Kyung Kwon ,  Yong Wook Kim ,  Jihyun Min ,  Garam Park ,  Shang Hyeun Park ,  Hyo Sook Jang ,  Shin Ae Jun ,  Yong Seok Han

IPC: C09K11/08 ,  C08L57/10 ,  G02F1/13357 ,  C09K11/02 ,  C09K11/56 ,  C09K11/70 ,  C09K11/88 ,  H05B33/14 ,  H10K50/115 ,  H10K59/38 ,  B82Y40/00 ,  B82Y20/00 ,  G02F1/1335

CPC classification number: C09K11/0883 ,  C08L57/10 ,  C09K11/025 ,  C09K11/565 ,  C09K11/70 ,  C09K11/883 ,  G02F1/133617 ,  H05B33/14 ,  H10K50/115 ,  H10K59/38 ,  B82Y20/00 ,  B82Y40/00 ,  C08L2203/20 ,  G02F1/133614 ,  G02F2202/022 ,  G02F2202/102 ,  G02F2202/36

Abstract: A cadmium free quantum dot not including cadmium and including: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, a composition and composite including the same, and an electronic device.

公开(公告)号：US11674079B2

公开(公告)日：2023-06-13

申请号：US17462428

申请日：2021-08-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihyun Min ,  Eun Joo Jang ,  Yongwook Kim ,  Garam Park

IPC: C09K11/02 ,  C09K11/66 ,  C09K11/88 ,  C08K3/16 ,  C09K11/61 ,  H10K59/38 ,  H10K102/00 ,  B82Y20/00 ,  B82Y40/00 ,  H01L27/32

CPC classification number: C09K11/025 ,  C08K3/16 ,  C09K11/02 ,  C09K11/616 ,  C09K11/665 ,  C09K11/88 ,  C09K11/881 ,  C09K11/883 ,  B82Y20/00 ,  B82Y40/00 ,  C08K2201/001 ,  H01L27/322 ,  H01L2251/5369 ,  Y10S977/774 ,  Y10S977/896 ,  Y10S977/95

Abstract: A quantum dot having a perovskite crystal structure and including a compound represented by Chemical Formula 1:

ABX3+α  Chemical Formula 1

wherein, A is a Group IA metal selected from Rb, Cs, Fr, and a combination thereof, B is a Group IVA metal selected from Si, Ge, Sn, Pb, and a combination thereof, X is a halogen selected from F, Cl, Br, and I, BF4, or a combination thereof, and α is greater than 0 and less than or equal to about 3; and wherein the quantum dot has a size of about 1 nanometer to about 50 nanometers.

公开(公告)号：US11639469B2

公开(公告)日：2023-05-02

申请号：US16254676

申请日：2019-01-23

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  The Governing Council of the University of Toronto

Inventor： Jihyun Min ,  Eun Joo Jang ,  Hyo Sook Jang ,  Ankit Jain ,  Edward Sargent ,  Oleksandr Voznyy ,  Larissa Levina ,  Sjoerd Hoogland ,  Petar Todorovic ,  Makhsud Saidaminov

IPC: C09K11/02 ,  C09K11/88 ,  C09K11/67 ,  C01G25/00 ,  C01G23/00 ,  C01B19/00 ,  B82Y40/00 ,  B82Y20/00 ,  H01L21/02

Abstract: A semiconductor nanocrystal particle including a transition metal chalcogenide represented by Chemical Formula 1, the semiconductor nanocrystal particle having a size of less than or equal to about 100 nanometers, and a method of producing the same: M1M2Cha3  Chemical Formula 1 wherein M1 is Ca, Sr, Ba, or a combination thereof, M2 is Ti, Zr, Hf, or a combination thereof, and Cha is S, Se, Te, or a combination thereof.

公开(公告)号：US11634628B2

公开(公告)日：2023-04-25

申请号：US16519188

申请日：2019-07-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihyun Min ,  Seon-Yeong Kim ,  Eun Joo Jang ,  Hyo Sook Jang ,  Soo Kyung Kwon ,  Yong Wook Kim

IPC: C09K11/62 ,  C09K11/70 ,  H01L29/12 ,  C09K11/88 ,  H01L27/32

Abstract: A quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core and does not include cadmium, wherein the core includes a Group III-V compound, the quantum dot has a maximum photoluminescence peak in a green light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than about 50 nanometers (nm), and a difference between a wavelength of the maximum photoluminescence peak and a first absorption peak wavelength of the quantum dot is less than or equal to about 25 nanometers, and a production method thereof.

公开(公告)号：US11512252B2

公开(公告)日：2022-11-29

申请号：US15251643

申请日：2016-08-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Garam Park ,  Eun Joo Jang ,  Yongwook Kim ,  Jihyun Min ,  Hyo Sook Jang ,  Shin Ae Jun ,  Taekhoon Kim ,  Yuho Won

IPC: C09K11/88 ,  C09K11/02 ,  C09K11/70 ,  H01L33/50 ,  B82Y20/00

Abstract: A semiconductor nanocrystal particle including: a core including a first semiconductor material; and a shell disposed on the core, wherein the shell includes a second semiconductor material, wherein the shell is free of cadmium, wherein the shell has at least two branches and at least one valley portion connecting the at least two branches, and wherein the first semiconductor material is different from the second semiconductor material.

公开(公告)号：US11124702B2

公开(公告)日：2021-09-21

申请号：US16798948

申请日：2020-02-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihyun Min ,  Eun Joo Jang ,  Yongwook Kim ,  Garam Park

IPC: C09K11/02 ,  C09K11/66 ,  C09K11/88 ,  C08K3/16 ,  C09K11/61 ,  H01L27/32 ,  B82Y20/00 ,  B82Y40/00

Abstract: A quantum dot having a perovskite crystal structure and including a compound represented by Chemical Formula 1: ABX3+α  Chemical Formula 1 wherein, A is a Group IA metal selected from Rb, Cs, Fr, and a combination thereof, B is a Group IVA metal selected from Si, Ge, Sn, Pb, and a combination thereof, X is a halogen selected from F, Cl, Br, and I, BR4, or a combination thereof, and α is greater than 0 and less than or equal to about 3; and wherein the quantum dot has a size of about 1 nanometer to about 50 nanometers.

公开(公告)号：US10585228B2

公开(公告)日：2020-03-10

申请号：US15393632

申请日：2016-12-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae Hyung Kim ,  Jihyun Min ,  Yongwook Kim ,  Eun Joo Jang

IPC: G02F1/1335 ,  F21V8/00 ,  C09K11/70 ,  C09K11/88 ,  C09K11/66

Abstract: An electronic device includes, a light source having a peak emission at a wavelength between about 440 nm to about 480 nm; and a photoconversion layer disposed on the light source, wherein the photoconversion layer includes a first quantum dot which emits red light and a second quantum dot which emits green light, wherein at least one of the first quantum dot and the second quantum dot has a perovskite crystal structure and includes a compound represented by Chemical Formula 1: AB′X3+α  Chemical Formula 1 wherein A is a Group IA metal, NR4+, or a combination thereof, B′ is a Group IVA metal, X is a halogen, BF4−, or a combination thereof, and α is 0 to 3.

公开(公告)号：US12187939B2

公开(公告)日：2025-01-07

申请号：US18130453

申请日：2023-04-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihyun Min ,  Seon-Yeong Kim ,  Eun Joo Jang ,  Hyo Sook Jang ,  Soo Kyung Kwon ,  Yong Wook Kim

IPC: C09K11/70 ,  C09K11/62 ,  C09K11/88 ,  H01L29/12 ,  H10K59/38

Abstract: A quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core and does not include cadmium, wherein the core includes a Group III-V compound, the quantum dot has a maximum photoluminescence peak in a green light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than about 50 nanometers (nm), and a difference between a wavelength of the maximum photoluminescence peak and a first absorption peak wavelength of the quantum dot is less than or equal to about 25 nanometers, and a production method thereof.

公开(公告)号：US11753589B2

公开(公告)日：2023-09-12

申请号：US17383814

申请日：2021-07-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihyun Min ,  Eun Joo Jang ,  Yong Wook Kim

IPC: C09K11/88 ,  C01G9/00 ,  C01G15/00 ,  C09K11/56 ,  C09K11/62 ,  C09K11/70 ,  C09K11/02 ,  B82Y20/00 ,  B82Y30/00 ,  H10K50/115

CPC classification number: C09K11/883 ,  C01G9/006 ,  C01G15/00 ,  C09K11/025 ,  C09K11/565 ,  C09K11/621 ,  C09K11/703 ,  B82Y20/00 ,  B82Y30/00 ,  C01P2004/04 ,  C01P2004/64 ,  C01P2006/60 ,  H10K50/115

Abstract: A quantum dot, a quantum dot-polymer composite, and an electronic device including the same. The quantum dot includes a core including a first semiconductor nanocrystal; a first shell including a second semiconductor nanocrystal including a Group III-VI compound on the core; and a second shell including a third semiconductor nanocrystal having a composition different from that of the second semiconductor nanocrystal on the first shell; wherein one of the first semiconductor nanocrystal and the third semiconductor nanocrystal includes a Group III-V compound.